Provided is a copper-nickel alloy electroplating apparatus which is capable of stably forming a copper-nickel plated coating on a workpiece with a uniform composition and which enables a plating bath to be used for a long period. The present invention provides a copper-nickel alloy electroplating apparatus (1), comprising: a cathode chamber (4) in which a workpiece (5) is to be placed; an anode chamber (6); an anode (7) placed in the anode chamber; an electrically conductive diaphragm (14) placed to separate the cathode chamber and the anode chamber from each other; a cathode chamber oxidation-reduction potential adjusting tank (8) for adjusting the oxidation-reduction potential of a plating liquid in the cathode chamber; an anode chamber oxidation-reduction potential adjusting tank (10) for adjusting the oxidation-reduction potential of a plating liquid in the anode chamber; and a power supply unit (36) that provides an electric current to flow between the workpiece and the anode.

Systems and methods for achieving uniformity across a redistribution layer are described. One of the methods includes patterning a photoresist layer over a substrate. The patterning defines a region for a conductive line and a via disposed below the region for the conductive line. The method further includes depositing a conductive material in between the patterned photoresist layer, such that the conductive material fills the via and the region for the conductive line. The depositing causes an overgrowth of conductive material of the conductive line to form a bump of the conductive material over the via. The method also includes planarizing a top surface of the conductive line while maintaining the patterned photoresist layer present over the substrate. The planarizing is facilitated by exerting a horizontal shear force over the conductive line and the bump. The planarizing is performed to flatten the bump.

Provided are an anode holder capable of reducing consumption of an additive in a plating apparatus, and a plating apparatus. An anode holder for holding an anode for use in a plating apparatus is provided, and the anode holder includes an inner space formed in the anode holder, to house the anode, a mask including a plurality of holes, and configured to cover a front surface of the inner space, and a diaphragm, at least part of the diaphragm being fixed to the mask in a region of the mask that covers the front surface of the inner space.

Disclosed herein are systems and methods for electroplating nickel which employ substantially sulfur-free nickel anodes. The methods may include placing a semiconductor substrate in a cathode chamber of an electroplating cell having an anode chamber containing a substantially sulfur-free nickel anode, contacting an electrolyte solution having reduced oxygen concentration with the substantially sulfur-free nickel anode contained in the anode chamber, and electroplating nickel from the electrolyte solution onto the semiconductor substrate placed in the cathode chamber. The electroplating systems may include an electroplating cell having an anode chamber configured for holding a substantially sulfur-free nickel anode, a cathode chamber, and a substrate holder within the cathode chamber configured for holding a semiconductor substrate. The systems may also include an oxygen removal device arranged to reduce oxygen concentration in the electrolyte solution as it is flowed to the anode chamber.

It is an object of the present disclosure to provide a method that allows uniformly forming a silver film by a solid electrolyte deposition. One aspect of this embodiment is a method for forming a silver film. The method includes disposing an anode, a substrate as a cathode, and a separator such that the separator is positioned between the anode and the substrate and the separator is in contact with a surface of the substrate, the separator including an electrolytic solution that contains silver ions, and applying a voltage between the anode and the substrate to form a silver film on the substrate. The separator is a porous membrane without ion exchange functional group. The electrolytic solution contains organic sulfonic acid ions. The substrate contains a crystalline metal, and a silver film is formed on the crystalline metal.

Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed.

An Sn alloy plating apparatus is disclosed. The apparatus includes a plating bath configured to store an Sn alloy plating solution therein with an insoluble anode and a substrate immersed in the Sn alloy plating solution, an Sn dissolving having an anion exchange membrane therein which isolates an anode chamber, in which an Sn anode is disposed, and a cathode chamber, in which a cathode is disposed, from each other, a pure water supply structure configured to supply pure water to the anode chamber and the cathode chamber, a methanesulfonic acid solution supply structure configured to supply a methanesulfonic acid solution, containing a methanesulfonic acid, to the anode chamber and the cathode chamber, and an Sn replenisher supply structure configured to supply an Sn replenisher, produced in the anode chamber and containing Sn ions and a methanesulfonic acid, to the plating bath.

The uniformity of electroplating a metal (e.g., copper) on a semiconductor wafer is improved by using an electroplating apparatus having a flow-shaping element positioned in the proximity of the semiconductor wafer, wherein the flow-shaping element is made of a resistive material and has two types of non-communicating channels made through the resistive material, such that the electrolyte is transported towards the substrate through both types of channels. The first type of channels is not perpendicular to the plane defined by a plating face of the substrate. The second type of channels is perpendicular to the plane defined by the plating face of the substrate. The channels of the first and second type are substantially spatially segregated. In one embodiment a plurality of channels of the first type are located in the central portion of the flow-shaping element and are surrounded by a plurality of channels of the second type.

An apparatus and method for uniform metallization on substrate are provided, achieving highly uniform metallic film deposition at a rate far greater than a conventional film growth rate in electrolyte solutions. The apparatus includes an immersion bath (3021), at least one set of electrode (3002), a substrate holder (3003), at least one ultra/mega sonic device (3004), a reflection plate (3005), and a rotating actuator (3030). The immersion bath contains at least one metal salt electrolyte (3020). The at least one set of electrode (3002) connects to an independent power supply. The substrate holder (3003) holds at least one substrate and electrically connects with a conductive side of the substrate. The conductive side of the substrate is exposed to face the electrode. The at least one ultra/mega sonic device (3004) and the reflection plate (3005) are disposed parallel for generating ultra/mega sonic standing wave in the immersion bath. The rotating actuator (3030) rotates the substrate holder (3003) along its axis in the standing wave field, so as to result in a uniform overall power intensity distribution across the substrate in an accumulated time.

Provided are a plating method, an insoluble anode and a plating apparatus capable of reducing consumption of an additive in a plating solution, when plating a substrate including a via or a hole for forming a through electrode. The plating method includes the steps of preparing a substrate including a via or a hole for forming a through electrode, preparing a plating solution tank that is divided, by a diaphragm, into an anode tank in which an insoluble anode is disposed and a cathode tank in which the substrate is disposed, and electroplating the substrate with an anode current density when plating the substrate in the plating solution tank being equal to or more than 0.4 ASD and equal to or less than 1.4 ASD.