There is provided the substrate holder for holding a substrate comprising a first holding member, a second holding member, a sealing member, a pin, a ring, and a moving mechanism. The sealing member forms a sealed space inside the substrate holder. The pin is fixed to one of the first holding member and the second holding member. The ring is disposed on another of the first holding member and the second holding member. The ring engages with the pin. The moving mechanism circumferentially moves the ring. The pin and the ring are engaged with one another to fix the first holding member and the second holding member to one another. The pin and the ring are disposed inside the sealed space.

Provided is an apparatus for electro-forming. The apparatus for electro-forming includes a plating bath which is a space where a substrate is plated and a clamp disposed within the plating bath and configured to grasp the substrate disposed in a horizontal direction. The apparatus for electro-forming further includes an assembly including an anode spaced above the substrate and connected to an external power supply and a plating solution supply unit spaced above the substrate and configured to supply a plating solution. The apparatus for electro-forming also includes a driving unit configured to reciprocate the assembly in a horizontal direction at a distance from the substrate. The assembly further includes an insulator between the anode and the plating solution supply unit.

Undesired deposition of metals on a lipseal (lipseal plate-out) during electrodeposition of metals on semiconductor substrates is minimized or eliminated by minimizing or eliminating ionic current directed at a lipseal. For example, electrodeposition can be conducted such as to avoid contact of a lipseal with a cathodically biased conductive material on the semiconductor substrate during the course of electroplating. This can be accomplished by shielding a small selected zone proximate the lipseal to suppress electrode-position of metal proximate the lipseal, and to avoid contact of metal with a lipseal. In some embodiments shielding is accomplished by sequentially using lipseals of different inner diameters during electroplating of metals into through-resist features, where a lipseal having a smaller diameter is used during a first electroplating step and serves as a shield blocking electrodeposition in a selected zone. In a second electroplating step, a lipseal of a larger inner diameter is used.

Disclosed are cup assemblies for holding, sealing, and providing electrical power to a semiconductor substrate during electroplating which may include a cup bottom element having a main body portion and a moment arm, an elastomeric sealing element disposed on the moment arm, and an electrical contact element disposed on the elastomeric sealing element. The main body portion may be such that it does not substantially flex when a substrate is pressed against the moment arm, and it may be rigidly affixed to another feature of the cup structure. The ratio of the average vertical thickness of the main body portion to that of the moment arm may be greater than about 5. The electrical contact element may have a substantially flat but flexible contact portion disposed upon a substantially horizontal portion of the sealing element. The elastomeric sealing element may be integrated with the cup bottom element during manufacturing.

Provided is a substrate holder for plating on a surface of a substrate, provided with an electrical contact that is easy to replace. A substrate holder 1 includes: a first holding member 2; a second holding member 3 that has an opening portion 3a for exposing the surface of a substrate W and holds the substrate W in a sandwiched manner with the first holding member 2; a plurality of engaging shaft portions 36 each having a head portion 36b in an expanded head shape at a tip end portion, provided in a circumferential direction of the second holding member 3; and an electrical contact 32 having a contact portion 32a to be in contact with an edge portion of the substrate W, and having an engagement reception portion 32b in a notch shape to be engaged with the adjacent engaging shaft portion 36 for arrangement along a circumference of the opening portion 3a of the second holding member 3.

The agitation of the plating solution may result in spattering of the plating solution. It have been found that the spattered plating solution can be attached even to portions that are not originally brought into contact with the plating solution in the plating apparatus. There is provided an electroplating apparatus for plating a substrate using a substrate holder, the electroplating apparatus comprising at least one bath for storing the substrate, the substrate holder being provided with a hanger shoulder, and a holder contact, and wherein the electroplating apparatus being provided with a cleaning/drying part provided on at least one side of the bath, the cleaning/drying part being provided for cleaning and/or drying at least one of the hanger shoulder, the holder contact and a contact provided to the bath.

An electrode for an electrochemical reaction bath has a base body, an active side which is configured to come into contact with the reaction bath, and a passive side which is configured to come into contact with at least one electrical conductor. The passive side includes a doped carbon coating that is preferably less than 5 μm in thickness. Preferably the doped carbon coating is a doped polycrystalline diamond coating in sp.sup.3 configuration and is doped with boron.

A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.

A hydrogen evolution assisted electroplating nozzle includes a nozzle tip configured to interface with a portion of a substructure. The nozzle also includes an inner coaxial tube connected to a reservoir containing an electrolyte and an anode, the inner coaxial tube configured to dispense the electrolyte through the nozzle tip onto the portion of the substructure. The nozzle also includes an outer coaxial tube encompassing the inner coaxial tube, the outer coaxial tube configured to extract the electrolyte from the portion of the substructure. The nozzle also includes at least one contact pin configured to make electrical contact with a conductive track on the substrate.

A wafer plating fixture for use in simultaneously electroplating a two substrates. The wafer plating fixture including: an electrically conductive carrier bus; a plurality of contact clips electrically coupled to the carrier bus and configured to hold the two substrates in place and electrically couple the two substrates to the carrier bus; and a non-conductive substrate backer to separate the two substrates coupled to the carrier bus. A method of electroplating a plurality of substrates. The method including: mounting two substrates to be plated onto a wafer plating fixture; mounting the wafer plating fixture on a continuous belt of plating system; dipping the wafer plating fixture with the two substrates held thereon into an electroplating bath; and applying a voltage to the two substrates via the wafer plating fixture.