A bulk finishing system including a plurality of liquid immersion workstations defining a finishing process for a plurality of metal work pieces processed therethrough. Each of the plurality of liquid immersion workstations includes a tank, and the plurality of metal work pieces are conveyed through a group of one or more of the respective tanks of the plurality of liquid immersion workstations by non-contact magnetic conveyance provided by an inclined downstream tank end wall forming a work piece exit slide, with a magnetic conveyor extending along an exterior side of the inclined downstream tank end wall. The plurality of work pieces are introduced loosely in bulk to each one of the group of tanks of the plurality of liquid immersion workstations.

Provided is a method for forming a metal film capable of forming a homogeneous metal film having a uniform film thickness by stably ensuring a fluid pressure of an electrolytic solution during film formation. The method places a substrate on a mount base. While sucking a gas between the substrate and a porous film through which the electrolytic solution can pass from a suction port of a suction passage formed on the mount base, the method brings the porous film into contact with the surface of the substrate. The method interrupts the suction passage while the porous film contacts the surface of the substrate. While interrupting the suction passage, the method allows the electrolytic solution to pass through the porous film while pressing the porous film against the surface of the substrate with a fluid pressure of the electrolytic solution and deposits metal from metal ions in the passed electrolytic solution on the surface of the substrate, thereby forming the metal film.

The invention relates to an electrochemical deposition system for a chemical and/or electrolytic surface treatment of a substrate, a module for chemical and/or electrolytic surface treatment of a substrate in a process fluid, a use of the electrochemical deposition system or the module for chemical and/or electrolytic surface treatment for a metal deposition application and a manufacturing method for an electrochemical deposition system for a chemical and/or electrolytic surface treatment of a substrate. The electrochemical deposition system comprises an anode, an anode enclosure, and a single electrolyte. The anode enclosure extends at least partially around the anode. The anode enclosure comprises a membrane. The anode and the anode enclosure are arranged in the single electrolyte. The single electrolyte is the only electrolyte of the electrochemical deposition system.

The invention relates to an electrochemical deposition system for a chemical and/or electrolytic surface treatment of a substrate, a module for chemical and/or electrolytic surface treatment of a substrate in a process fluid, a use of the electrochemical deposition system or the module for chemical and/or electrolytic surface treatment for a metal deposition application and a manufacturing method for an electrochemical deposition system for a chemical and/or electrolytic surface treatment of a substrate. The electrochemical deposition system comprises an anode, an anode enclosure, and a single electrolyte. The anode enclosure extends at least partially around the anode. The anode enclosure comprises a membrane. The anode and the anode enclosure are arranged in the single electrolyte. The single electrolyte is the only electrolyte of the electrochemical deposition system.

The embodiments herein relate to apparatuses and methods for electroplating one or more materials onto a substrate. Embodiments herein utilize a cross flow conduit in the electroplating cell to divert flow of fluid from a region between a substrate and a channeled ionically resistive plate positioned near the substrate down to a level lower than level of fluid in a fluid containment unit for collecting overflow fluid from the plating system for recirculation. The cross flow conduit can include channels cut into components of the plating cell to allow diverted flow, or can include an attachable diversion device mountable to an existing plating cell to divert flow downwards to the fluid containment unit. Embodiments also include a flow restrictor which may be a plate or a pressure relief valve for modulating flow of fluid in the cross flow conduit during plating.

Systems and methods for electroplating are described. The electroplating system may include a vessel configured to hold a first portion of a liquid electrolyte. The system may also include a substrate holder configured for holding a substrate in the vessel. The system may further include a first reservoir in fluid communication with the vessel. In addition, the system may include a second reservoir in fluid communication with the vessel. Furthermore, the system may include a first mechanism configured to expel a second portion of the liquid electrolyte from the first reservoir into the vessel. The system may also include a second mechanism configured to take in a third potion of the liquid electrolyte from the vessel into the second reservoir when the second portion of the liquid electrolyte is expelled from the first reservoir. Methods may include oscillating flow of the electrolyte within the vessel.

Systems and methods for electroplating are described. The electroplating system may include a vessel configured to hold a first portion of a liquid electrolyte. The system may also include a substrate holder configured for holding a substrate in the vessel. The system may further include a first reservoir in fluid communication with the vessel. In addition, the system may include a second reservoir in fluid communication with the vessel. Furthermore, the system may include a first mechanism configured to expel a second portion of the liquid electrolyte from the first reservoir into the vessel. The system may also include a second mechanism configured to take in a third potion of the liquid electrolyte from the vessel into the second reservoir when the second portion of the liquid electrolyte is expelled from the first reservoir. Methods may include oscillating flow of the electrolyte within the vessel.

A semiconductor apparatus and methods of processing a semiconductor workpiece are provided. The semiconductor apparatus for pre-wetting a semiconductor workpiece includes a process chamber, a workpiece holder disposed within the process chamber to hold the semiconductor workpiece, a pre-wetting fluid tank disposed outside the process chamber and containing a pre-wetting fluid, and a conduit coupled to the pre-wetting fluid tank and extending into the process chamber. The conduit delivers the pre-wetting fluid from the pre-wetting fluid tank out through an outlet of the conduit to wet a major surface of the semiconductor workpiece comprising a plurality of recess portions.

A semiconductor apparatus and methods of processing a semiconductor workpiece are provided. The semiconductor apparatus for pre-wetting a semiconductor workpiece includes a process chamber, a workpiece holder disposed within the process chamber to hold the semiconductor workpiece, a pre-wetting fluid tank disposed outside the process chamber and containing a pre-wetting fluid, and a conduit coupled to the pre-wetting fluid tank and extending into the process chamber. The conduit delivers the pre-wetting fluid from the pre-wetting fluid tank out through an outlet of the conduit to wet a major surface of the semiconductor workpiece comprising a plurality of recess portions.

A plating apparatus 1000 includes a plating tank 10 and a substrate holder 30. The plating tank includes an anode 11 arranged in an anode chamber 13. The substrate holder is arranged above the anode chamber and configured to hold a substrate Wf as a cathode. The anode has a cylindrical shape extending in a vertical direction. The plating apparatus further includes a gas accumulation portion 60 and a discharge mechanism 70. The gas accumulation portion is disposed in the anode chamber so as to have a space between the anode and the gas accumulation portion. The gas accumulation portion covers an upper end, an outer peripheral surface, and an inner peripheral surface of the anode to accumulate a process gas generated from the anode. The discharge mechanism is configured to discharge the process gas accumulated in the gas accumulation portion to outside of the plating tank.