Iridium electroplating compositions containing 1,10-phenanthroline compounds in trace amounts to electroplate substantially defect-free uniform and smooth surface morphology indium on metal layers. The indium electroplating compositions can be used to electroplate indium metal on metal layers of various substrates such as semiconductor wafers and as thermal interface materials.

In a plasma electrolytic oxidation apparatus and a method of plasma electrolytic oxidation using the plasma electrolytic oxidation apparatus, the plasma electrolytic oxidation apparatus includes a chamber and an electrode unit. The chamber is configured to receive an electrolyte. The electrode unit is configured to receive the electrolyte from the chamber and to treat an object with a plasma electrolytic oxidation treatment. The electrode unit includes an electrode, an enclosing part and a cover. The electrode is configured to receive a voltage from outside, and to form a receiving space in which the electrolyte is received between the electrode and the object. The enclosing part is configured to enclose a gap between the electrode and the object. The cover is configured to cover the electrode.

In a plasma electrolytic oxidation apparatus and a method of plasma electrolytic oxidation using the plasma electrolytic oxidation apparatus, the plasma electrolytic oxidation apparatus includes a chamber and an electrode unit. The chamber is configured to receive an electrolyte. The electrode unit is configured to receive the electrolyte from the chamber and to treat an object with a plasma electrolytic oxidation treatment. The electrode unit includes an electrode, an enclosing part and a cover. The electrode is configured to receive a voltage from outside, and to form a receiving space in which the electrolyte is received between the electrode and the object. The enclosing part is configured to enclose a gap between the electrode and the object. The cover is configured to cover the electrode.

An etcher comprises a bath, a plurality of blades, and a tunnel. The bath includes a first electrode at a first end and a second electrode at a second end. The plurality of blades is configured to fit in the bath. At least one blade of the plurality of blades holds a wafer. At least one tunnel is configured to fit between adjacent blades of the plurality of blades in the bath.

An etcher comprises a bath, a plurality of blades, and a tunnel. The bath includes a first electrode at a first end and a second electrode at a second end. The plurality of blades is configured to fit in the bath. At least one blade of the plurality of blades holds a wafer. At least one tunnel is configured to fit between adjacent blades of the plurality of blades in the bath.

An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate by using a processing liquid supplied to the processing target substrate includes a base body having a flat plate shape; and a direct electrode provided on a front surface of the base body and configured to be brought into contact with the processing liquid to apply a voltage between the processing target substrate and the direct electrode. An irregularity pattern is formed on a front surface of the electrolytic processing jig at a processing target substrate side.

Disclosed herein are systems and methods for electroplating nickel which employ substantially sulfur-free nickel anodes. The methods may include placing a semiconductor substrate in a cathode chamber of an electroplating cell having an anode chamber containing a substantially sulfur-free nickel anode, contacting an electrolyte solution having reduced oxygen concentration with the substantially sulfur-free nickel anode contained in the anode chamber, and electroplating nickel from the electrolyte solution onto the semiconductor substrate placed in the cathode chamber. The electroplating systems may include an electroplating cell having an anode chamber configured for holding a substantially sulfur-free nickel anode, a cathode chamber, and a substrate holder within the cathode chamber configured for holding a semiconductor substrate. The systems may also include an oxygen removal device arranged to reduce oxygen concentration in the electrolyte solution as it is flowed to the anode chamber.

Disclosed herein are systems and methods for electroplating nickel which employ substantially sulfur-free nickel anodes. The methods may include placing a semiconductor substrate in a cathode chamber of an electroplating cell having an anode chamber containing a substantially sulfur-free nickel anode, contacting an electrolyte solution having reduced oxygen concentration with the substantially sulfur-free nickel anode contained in the anode chamber, and electroplating nickel from the electrolyte solution onto the semiconductor substrate placed in the cathode chamber. The electroplating systems may include an electroplating cell having an anode chamber configured for holding a substantially sulfur-free nickel anode, a cathode chamber, and a substrate holder within the cathode chamber configured for holding a semiconductor substrate. The systems may also include an oxygen removal device arranged to reduce oxygen concentration in the electrolyte solution as it is flowed to the anode chamber.

Disclosed are pre-wetting apparatus designs and methods. These apparatus designs and methods are used to pre-wet a wafer prior to plating a metal on the surface of the wafer. Disclosed compositions of the pre-wetting fluid prevent corrosion of a seed layer on the wafer and also improve the filling rates of features on the wafer.

Disclosed are pre-wetting apparatus designs and methods. These apparatus designs and methods are used to pre-wet a wafer prior to plating a metal on the surface of the wafer. Disclosed compositions of the pre-wetting fluid prevent corrosion of a seed layer on the wafer and also improve the filling rates of features on the wafer.