Method for creating a flexible, multistable element (5): a silicon component (S) is etched with a beam (P) connecting two ends (E1, E2) of a rigid mass (MU) having a cross-section more than ten times that of said beam (P), SiO.sub.2 is grown at 1100° C. for a duration adjusted to obtain, on said beam (P), a first ratio (RA) of more than 1 between the section of a first peripheral layer (CP1) of SiO.sub.2, and that of a first silicon core (A1), and, on said mass (MU), a second ratio (RB) between the section of a second peripheral layer (CP2) of SiO.sub.2 and that of a second silicon core (A2), which is less than a hundredth of said first ratio (RA); cooling to ambient temperature is performed, to deform said beam (P) by buckling when said mass (MU) cools and contracts more than said beam (P).

A method and system are provided for crystallizing thin films with a laser system. The method includes obtaining a thin film comprising a substrate and a target layer that contains nano-scale particles and is deposited on the substrate. The heat conduction between the target layer and the substrate of the thin film is determined based on thermal input from the laser system to identify operating parameters for the laser system that cause crystallization of the nano-scale particles of the target layer in an environment at near room temperature with the substrate remaining at a temperature below the temperature of the target layer. The laser system is then operated with the determined operating parameters to generate a laser beam that is transmitted along an optical path to impinge the target layer. The laser beam is pulsed to create a localized rapid heating and cooling of the target layer.

There is provided a semiconductor nanocrystal or quantum dot comprising a core made of a material and at least one shell made of another material. Also there is provided a composite comprising a plurality of such nanocrystals or quantum dots. Moreover, there is provided a method of measuring the temperature of an object or area, comprising using a temperature sensor comprising a semiconductor nanocrystal or quantum dot of the invention.

There is provided a semiconductor nanocrystal or quantum dot comprising a core made of a material and at least one shell made of another material. Also there is provided a composite comprising a plurality of such nanocrystals or quantum dots. Moreover, there is provided a method of measuring the temperature of an object or area, comprising using a temperature sensor comprising a semiconductor nanocrystal or quantum dot of the invention.

A method of growing crystals on two-dimensional layered material is provided that includes reversibly hydrogenating a two-dimensional layered material, using a controlled radio-frequency hydrogen plasma, depositing Pt atoms on the reversibly hydrogenated two-dimensional layered material, using Atomic Layer Deposition (ALD), where the reversibly hydrogenated two-dimensional layered material promotes loss of methyl groups in an ALD Pt precursor, and forming Pt-O on the reversibly hydrogenated two-dimensional layered material, using combustion by O.sub.2, where the Pt-O is used for subsequent Pt half-cycles of the ALD process, where growth of Pt crystals occurs.

An alumina substrate having a carbon-containing phase with an AlN layer formed on a surface of the alumina substrate.

An alumina substrate having a carbon-containing phase with an AlN layer formed on a surface of the alumina substrate.

The application relates to fluorescent powder which has a garnet structure and can be effectively excited by ultraviolet light or blue light, a method for preparing the fluorescent powder, and a light emitting device, an image display device and an illumination device comprising the fluorescent powder. A chemical formula of the fluorescent powder is expressed as: (M.sup.1a-xM.sup.2x)ZrbM.sup.3cOd, where M.sup.1 is one or two elements selected from Sr, Ca, La, Y, Lu and Gd, Ca or Sr being necessary; M.sup.2 is one or two elements selected from Ce, Pr, Sm, Eu, Tb and Dy, Ce being necessary; M.sup.3 is at least one element selected from Ga, Si, and Ge, Ga being necessary; and 2.8≦a≦3.2, 1.9≦b≦2.1, 2.8≦c≦3.2, 11.8≦d≦12.2, and 0.002≦x≦0.6.

The application relates to fluorescent powder which has a garnet structure and can be effectively excited by ultraviolet light or blue light, a method for preparing the fluorescent powder, and a light emitting device, an image display device and an illumination device comprising the fluorescent powder. A chemical formula of the fluorescent powder is expressed as: (M.sup.1a-xM.sup.2x)ZrbM.sup.3cOd, where M.sup.1 is one or two elements selected from Sr, Ca, La, Y, Lu and Gd, Ca or Sr being necessary; M.sup.2 is one or two elements selected from Ce, Pr, Sm, Eu, Tb and Dy, Ce being necessary; M.sup.3 is at least one element selected from Ga, Si, and Ge, Ga being necessary; and 2.8≦a≦3.2, 1.9≦b≦2.1, 2.8≦c≦3.2, 11.8≦d≦12.2, and 0.002≦x≦0.6.

A process for forming graphene, includes: depositing at least a first and a second metal onto a surface of silicon carbide (SiC), and heating the SiC and the first and second metals under conditions that cause the first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide. The corresponding solubilities of the carbon in the stable silicide and in the second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer on the SiC.