A method of making a component includes depositing a metallic powder on a workplane; directing a beam from a directed energy source to fuse the powder in a pattern corresponding to a cross-sectional layer of the component; repeating in a cycle the steps of depositing and fusing to build up the component in a layer-by layer fashion; and during the cycle of depositing and melting, using an external heat control apparatus separate from the directed energy source to maintain a predetermined temperature profile of the component, such that the resulting component has a directionally-solidified or single-crystal microstructure.

A TiAl intermetallic compound single crystal material and a preparation method therefor are disclosed. The alloy composition of the material comprises Ti.sub.aAl.sub.bNb.sub.c(C, Si).sub.d, wherein 43b49, 2c10, a+b+c=100, and 0d1 (at. %).

The apparatus for producing a gallium oxide crystal relating to the invention contains a vertical Bridgman furnace containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a crucible shaft provided vertically movably through the base body; and a crucible disposed on the crucible shaft, heated with the heater, the crucible is a crucible containing a Pt-based alloy, the furnace body has an inner wall that is formed as a heat-resistant wall containing plural ring shaped heat-resistant members each having a prescribed height accumulated on each other, and the ring shaped heat-resistant members each contain plural divided pieces that are joined to each other to the ring shape.

An installation for manufacturing a part by implementation of a Bridgman method includes in particular a mold intended to receive a melted material and a thermal screen movable with respect to the mold intended to be positioned in front of the solidification front during the directional solidification.

A nonlinear optical crystal of cesium fluorooxoborate, and a method of preparation and use thereof. The crystal has a chemical formula of CsB.sub.4O.sub.6F and a molecular weight of 291.15. It belongs to an orthorhombic crystal system, with a space group of Pna2.sub.1, crystal cell parameters of a=7.9241 , b=11.3996 , c=6.6638 , and ===90, and a unit cell volume of 601.95 .sup.3. A melt method, high temperature solution method, vacuum encapsulation method, hydrothermal method or room temperature solution method is used to grow the crystal of CsB.sub.4O.sub.6F.

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber

A method of manufacturing a directionally solidified article of the present disclosure includes providing a collection of particulate material and additively manufacturing a first article with an outer wall from the particulate material. The outer wall defines at least part of a cavity. The cavity contains an amount of the particulate material. The method also includes encasing at least a portion of the first article with an outer member. The outer member defines an internal cavity that corresponds to the first article. The method further includes heating the outer member and the first article to melt the first article into a molten mass within the internal cavity of the outer member. Additionally, the method includes solidifying the molten mass along a predetermined solidification path within the outer member to form a second article that corresponds to at least a portion of the internal cavity of the outer member.

A semiconductor synthesizing device comprises a closed reaction tube, a first furnace body and a second furnace body. The reaction tube is arranged with a plurality of horizontal boat containers which include a plurality of first-layer horizontal boat containers and a second-layer horizontal boat container superposed on a bracket device provided on at least one of the first-layer horizontal boat containers. The bracket device is configured to support the second-layer horizontal boat container and provides a gap between the first-layer horizontal boat container and the second-layer horizontal boat container.

Methods for forming single crystal silicon ingots in which plural sample rods are grown from the melt are disclosed. A parameter related to the impurity concentration of the melt or ingot is measured. In some embodiments, the sample rods each have a diameter less than the diameter of the product ingot.

An indium phosphide single crystal including a straight body portion having a cylindrical shape, wherein a residual strain in a tangential direction in an outer circumferential portion is a compressive strain, the outer circumferential portion extending between an inner circumferential surface located 10 mm inward from an outer circumferential surface of the straight body portion toward a central axis and a location located 5 mm inward from the outer circumferential surface. There is also provided an indium phosphide single crystal substrate, wherein a residual strain in a tangential direction in an outer circumferential portion is a compressive strain, the outer circumferential portion extending between an inner circumference located 10 mm inward from an outer circumference toward a center and a location located 5 mm inward from the outer circumference.