A hybrid crucible comprising a frame and a bottom plate. The crucible is characterized by the selection of material of these two components, which have been optimized in terms of thermal conductivity. The crucible is adapted to produce crystalline materials. Moreover, a method for producing crystalline material is disclosed.

A hybrid crucible comprising a frame and a bottom plate. The crucible is characterized by the selection of material of these two components, which have been optimized in terms of thermal conductivity. The crucible is adapted to produce crystalline materials. Moreover, a method for producing crystalline material is disclosed.

A reflective optical element (11), in particular for reflecting EUV radiation (14) includes: a substrate having an optical surface on which a reflective coating (13) is applied. The substrate has a quasi-monocrystalline volume region (8). An associated method for producing the substrate (10) for the optical element (11) includes: introducing a starting material, preferably a metal or a semimetal, into a container and melting the starting material, producing a material body having a quasi-monocrystalline volume region (8) by directionally solidifying the molten starting material proceeding from a plurality of monocrystalline seed plates arranged in the region of a base of the container, and producing the substrate by processing the material body to form an optical surface (12).

A reflective optical element (11), in particular for reflecting EUV radiation (14) includes: a substrate having an optical surface on which a reflective coating (13) is applied. The substrate has a quasi-monocrystalline volume region (8). An associated method for producing the substrate (10) for the optical element (11) includes: introducing a starting material, preferably a metal or a semimetal, into a container and melting the starting material, producing a material body having a quasi-monocrystalline volume region (8) by directionally solidifying the molten starting material proceeding from a plurality of monocrystalline seed plates arranged in the region of a base of the container, and producing the substrate by processing the material body to form an optical surface (12).

Method for producing silicon-ingots (1) including the following steps: providing a silicon melt (3), growing a block (2) of silicon from the silicon melt (3), the block (2) having a predetermined crystal orientation, cutting the block (2) along at least one cutting plane (16, 17, 18) into a number of silicon-ingots (1).

Method for producing silicon-ingots (1) including the following steps: providing a silicon melt (3), growing a block (2) of silicon from the silicon melt (3), the block (2) having a predetermined crystal orientation, cutting the block (2) along at least one cutting plane (16, 17, 18) into a number of silicon-ingots (1).

A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.

Disclosed is a preparation method of a polycrystalline silicon ingot. The preparation method comprises: providing a silicon nucleation layer at the bottom of a crucible, and filling a silicon material above the silicon nucleation layer; heating the silicon material to melt same, adjusting the thermal field inside the crucible to make the melted silicon material to start crystallization on the basis of the silicon nucleation layer; and when the crystallization is finished, performing annealing and cooling to obtain a polycrystalline silicon ingot. By adopting the preparation method, a desirable initial nucleus can be obtained for a polycrystalline silicon ingot, so as to reduce dislocation multiplication during the growth of the polycrystalline silicon ingot. Further disclosed are a polycrystalline silicon ingot obtained through the preparation method and a polycrystalline silicon wafer made using the polycrystalline silicon ingot as a raw material.

Disclosed is a preparation method of a polycrystalline silicon ingot. The preparation method comprises: providing a silicon nucleation layer at the bottom of a crucible, and filling a silicon material above the silicon nucleation layer; heating the silicon material to melt same, adjusting the thermal field inside the crucible to make the melted silicon material to start crystallization on the basis of the silicon nucleation layer; and when the crystallization is finished, performing annealing and cooling to obtain a polycrystalline silicon ingot. By adopting the preparation method, a desirable initial nucleus can be obtained for a polycrystalline silicon ingot, so as to reduce dislocation multiplication during the growth of the polycrystalline silicon ingot. Further disclosed are a polycrystalline silicon ingot obtained through the preparation method and a polycrystalline silicon wafer made using the polycrystalline silicon ingot as a raw material.

A high-temperature die casting die includes a first die plate with a first recess and a second die plate with a second recess, the first and second recesses defining a main part cavity and gating. A grain selector is in fluid communication with the main cavity, and an in situ zone refining apparatus is adapted to apply a localized thermal gradient to at least one of the first and second die plates. The localized thermal gradient and the at least one die plate are movable relative to each other so as to apply the localized thermal gradient along a first direction extending from the grain selector longitudinally across the main part cavity.