A deposition device for providing a thin film on a substrate. The device comprises a material source for providing at least one first metallic element which does not re-evaporate substantially from the substrate under particular growth conditions, at least one second metallic element or metal based molecule which does re-evaporate substantially from the substrate under the same growth conditions, and a component suitable for forming an at least one first compound with the at least one first metallic element and an at least one second compound with the at least one second metallic element or metal based molecule. The device comprises a controller configured to control the growth conditions, and the amounts of the at least one first metallic element, the at least one second metallic element or metal based molecule, and the component so as to obtain a substantially stoichiometric thin film.

A method of manufacturing a silicon carbide ingot, includes a preparing operation of adjusting internal space of a reactor in which silicon carbide raw materials and a seed crystal are disposed to have a high vacuum atmosphere, a proceeding operation of injecting an inert gas into the internal space, heating the internal space by moving a heater surrounding the reactor to induce the silicon carbide raw materials to sublimate, and growing the silicon carbide ingot on the seed crystal, and a cooling operation of cooling the temperature of the internal space to room temperature. The moving of the heater has a relative position which becomes more distant at a rate of 0.1 mm/hr to 0.48 mm/hr based on the seed crystal.

In an embodiment, a method includes providing a substrate and epitaxially growing a semiconductor layer of a semiconductor material on the substrate using physical vapor deposition, wherein the semiconductor material has a tetragonal phase, wherein the semiconductor material has the general formula: (In.sub.1-xM.sub.x)(Te.sub.1-yZ.sub.y), and wherein M=Ga, Zn, Cd, Hg, Tl, Sn, Pb, Ge, or combinations thereof, Z═As, S, Se, Sb, or combinations thereof, x=0-0.1, and y=0-0.1, or wherein the semiconductor material has the general formula: (In.sub.1-xTl.sub.x)(Te.sub.1-ySe.sub.y) with x=0-1 and y=0-1.

A silicon carbide ingot manufacturing method and a silicon carbide ingot manufacturing system are provided. The silicon carbide ingot manufacturing method and the silicon carbide ingot manufacturing system may change a temperature gradient depending on the growth of an ingot by implementing a guide which has a tilted angle to an external direction from the interior of a reactor, in an operation to grow an ingot during a silicon carbide ingot manufacturing process.

The present invention provides a SiC single crystal manufacturing apparatus, including a crystal growth vessel which has a source loading portion to hold a SiC source, and a lid which is provided with a seed crystal support to hold a seed crystal; an insulating material which has at least one through-hole and covers the crystal growth vessel; a heater which is configured to heat the crystal growth vessel; and a temperature measuring instrument which is configured to measure the temperature of the crystal growth vessel through the through-hole, wherein the inner wall surface of the through-hole of the insulating material is coated with a coating material which contains a heat-resistant metal carbide or a heat-resistant metal nitride.

An apparatus for producing a Group-III nitride semiconductor crystal includes a raw material reaction chamber, a raw material reactor which is provided in the raw material reaction chamber and configured to generate a Group-III element-containing gas, a board-holding member configured to hold a board in the raw material reaction chamber, a raw material nozzle configured to spray the Group-III element-containing gas toward the board, a nitrogen source nozzle configured to spray a nitrogen element-containing gas toward the board, in which, in a side view seen in a direction perpendicular to a vertical direction, a spray direction of the nitrogen source nozzle intersects with a spray direction of the raw material nozzle before the board, and a mixing part in which the Group-III element-containing gas and the nitrogen element-containing gas are mixed together is formed around the intersection as a center, a heater, and a rotation mechanism.

A manufacturing method of a silicon carbide wafer includes the following. A raw material containing carbon and silicon and a seed located above the raw material are provided in a reactor. A nitrogen content in the reactor is reduced, which includes the following. An argon gas is passed into the reactor, where a flow rate of passing the argon gas into the reactor is 1,000 sccm to 5,000 sccm, and a time of passing the argon gas into the reactor is 2 hours to 48 hours. The reactor and the raw material are heated to form a silicon carbide material on the seed. The reactor and the raw material are cooled to obtain a silicon carbide ingot. The silicon carbide ingot is cut to obtain a plurality of silicon carbide wafers. A semiconductor structure is also provided.

A silicon carbide wafer and a method of fabricating the same are provided. In the silicon carbide wafer, a ratio (V:N) of a vanadium concentration to a nitrogen concentration is in a range of 2:1 to 10:1, and a portion of the silicon carbide wafer having a resistivity greater than 10.sup.12 Ω.Math.cm accounts for more than 85% of an entire wafer area of the silicon carbide wafer.

A method for manufacturing a SiC single crystal reducing crystallinity degradation at a wafer central portion wherein a growth container surrounds a heat-insulating material with a top temperature measurement hole, a seed crystal substrate at an upper portion inside the container, and a silicon carbide raw material at a lower portion of the container and sublimated to grow a SiC single crystal on the seed crystal substrate. A center position hole deviates from a center position of the seed crystal substrate and moves to the periphery side of the center of the seed crystal substrate. A SiC single crystal substrate surface is tilted by a {0001} plane and used as the seed crystal substrate. The SiC single crystal grows with the seed crystal substrate directed to a normal vector of the seed crystal substrate basal plane parallel to the main surface and identical to the hole in a cross-sectional view.

A method of manufacturing a silicon carbide ingot, includes a preparing operation of adjusting internal space of a reactor in which silicon carbide raw materials and a seed crystal are disposed to have a high vacuum atmosphere, a proceeding operation of injecting an inert gas into the internal space, heating the internal space by moving a heater surrounding the reactor to induce the silicon carbide raw materials to sublimate, and growing the silicon carbide ingot on the seed crystal, and a cooling operation of cooling the temperature of the internal space to room temperature. The moving of the heater has a relative position which becomes more distant at a rate of 0.1 mm/hr to 0.48 mm/hr based on the seed crystal.