A process for producing a lithium-manganese-nickel oxide spinel material includes maintaining a solution comprising a dissolved lithium compound, a dissolved manganese compound, a dissolved nickel compound, a hydroxycarboxylic acid, a polyhydroxy alcohol, and, optionally, an additional metallic compound, at an elevated temperature T.sub.1, where T.sub.1 is below the boiling point of the solution, until the solution gels. The gel is maintained at an elevated temperature until it ignites and burns to form a Li—Mn—Ni—O powder. The Li—Mn—Ni—O powder is calcined to burn off carbon and/or other impurities present in the powder. The resultant calcined powder is optionally subjected 1 to microwave treatment, to obtain a treated powder, which is annealed to crystallize the powder. The resultant annealed material is optionally subjected to microwave treatment. At least one of the microwave treatments is carried out. The lithium-manganese-nickel oxide spinel material is thereby obtained.

A process for producing a lithium-manganese-nickel oxide spinel material includes maintaining a solution comprising a dissolved lithium compound, a dissolved manganese compound, a dissolved nickel compound, a hydroxycarboxylic acid, a polyhydroxy alcohol, and, optionally, an additional metallic compound, at an elevated temperature T.sub.1, where T.sub.1 is below the boiling point of the solution, until the solution gels. The gel is maintained at an elevated temperature until it ignites and burns to form a Li—Mn—Ni—O powder. The Li—Mn—Ni—O powder is calcined to burn off carbon and/or other impurities present in the powder. The resultant calcined powder is optionally subjected 1 to microwave treatment, to obtain a treated powder, which is annealed to crystallize the powder. The resultant annealed material is optionally subjected to microwave treatment. At least one of the microwave treatments is carried out. The lithium-manganese-nickel oxide spinel material is thereby obtained.

Methods and systems for removing impurities from an electrolytic salt are disclosed. After removal of impurities from the salt, the salt can be subjected to electrorefining to produce high-purity materials, for example silicon. Impurities are removed from the salt using a system that includes a first working electrode, a counter electrode, and at least one reference electrode. A second working electrode can also be utilized. The salt may be utilized in an electrorefining system, for example a system operated in a single phase or multiple phase operation to produce high-purity materials, such as solar-grade silicon.

Methods and systems for removing impurities from an electrolytic salt are disclosed. After removal of impurities from the salt, the salt can be subjected to electrorefining to produce high-purity materials, for example silicon. Impurities are removed from the salt using a system that includes a first working electrode, a counter electrode, and at least one reference electrode. A second working electrode can also be utilized. The salt may be utilized in an electrorefining system, for example a system operated in a single phase or multiple phase operation to produce high-purity materials, such as solar-grade silicon.

Among other things, piezoelectric materials and methods of their manufacture are described; particularly methods of forming regions of varying crystal structure within a relaxor piezoelectric substrate. Such methods may including heating the piezoelectric substrate above the transition temperature and below the Curie temperature such that a first phase transition occurs to a first crystal structure; rapidly cooling the piezoelectric substrate below the transition temperature at a cooling rate that is sufficiently high for the first crystal structure to persist; and applying an electric field through one or more selected regions of the piezoelectric substrate, such that within the one or more selected regions, a second phase transition occurs and results in a second crystal structure.

Among other things, piezoelectric materials and methods of their manufacture are described; particularly methods of forming regions of varying crystal structure within a relaxor piezoelectric substrate. Such methods may including heating the piezoelectric substrate above the transition temperature and below the Curie temperature such that a first phase transition occurs to a first crystal structure; rapidly cooling the piezoelectric substrate below the transition temperature at a cooling rate that is sufficiently high for the first crystal structure to persist; and applying an electric field through one or more selected regions of the piezoelectric substrate, such that within the one or more selected regions, a second phase transition occurs and results in a second crystal structure.

The present disclosure discloses a reaction chamber, including a chamber body, the chamber body being connected to an upper cover by an insulation member, the chamber body and the upper cover forming an inner chamber, and the upper cover being provided with a through-hole that is communicated with the inner chamber; a gas inlet mechanism including an insulation body at least partially arranged in the through-hole, a gas inlet channel being arranged in the insulation body, a flange part being arranged on one side of the insulation body facing away from the inner chamber, the flange part being grounded and configured to communicate a gas inlet end of the gas inlet channel with a gas output end of a gas inlet pipe configure to transfer a reaction gas, a gas outlet end of the gas inlet channel being communicated with the inner chamber.

The present disclosure discloses a reaction chamber, including a chamber body, the chamber body being connected to an upper cover by an insulation member, the chamber body and the upper cover forming an inner chamber, and the upper cover being provided with a through-hole that is communicated with the inner chamber; a gas inlet mechanism including an insulation body at least partially arranged in the through-hole, a gas inlet channel being arranged in the insulation body, a flange part being arranged on one side of the insulation body facing away from the inner chamber, the flange part being grounded and configured to communicate a gas inlet end of the gas inlet channel with a gas output end of a gas inlet pipe configure to transfer a reaction gas, a gas outlet end of the gas inlet channel being communicated with the inner chamber.

An optical element is provided. The optical element includes a solid crystal including crystal molecules aligned in a predetermined alignment pattern at least partially defined by an alignment structure.

A process for producing a cube textured foil is described. The process includes providing a cube textured metal foil M. The process further includes electroplating an epitaxial layer of an alloy on the foil M, whereby the epitaxial layer substantially replicates the cube texture of the metal foil M. The process further includes electroplating a non-epitaxial layer of an alloy on the epitaxial layer. The process further includes separating the electroplated alloy from the cube textured metal foil M to obtain an electro-formed alloy with one cube textured surface.