Methods for pre-lithiating an electroactive material including a Group III element, Group IV element, a Group V element, or a combination thereof for an electrode for an electrochemical cell are provided as well as electrodes including the pre-lithiated electroactive material. The methods include reacting a lithiating agent including LiH or Li.sub.3N with the electroactive material to form a pre-lithiated electroactive material.

A phosphor powder including phosphor particles which are a phosphor represented by a general formula M.sub.x(Si, Al).sub.2(N, O).sub.3y (where M is Li and one or more alkaline earth metal elements and 0.52x0.9 and 0.06y0.36 are satisfied) and in which a part of M is substituted with a Ce element, wherein a Si/Al atomic ratio is equal to or more than 1.5 and equal to or less than 6, an O/N atomic ratio is equal to or more than 0 and equal to or less than 0.1, 5 to 50 mol % of M is Li, and 0.5 to 10 mol % of M is Ce, and a total content of a Cr element, a Fe element, and a Ni element in the phosphor powder is equal to or less than 20.0 ppm.

In a method for sputter depositing an additive-containing aluminium nitride film containing an additive element like Sc or Y, a first layer of the additive-containing aluminium nitride film is deposited onto a substrate disposed within a chamber by pulsed DC reactive sputtering. A second layer of the additive-containing aluminium nitride film is deposited onto the first layer by pulsed DC reactive sputtering. The second layer has the same composition as the first layer. A gas or gaseous mixture is introduced into the chamber when depositing the first layer. A gaseous mixture comprising nitrogen gas and an inert gas is introduced into the chamber when depositing the second layer. The percentage of nitrogen gas in the flow rate (in sccm) when depositing the first layer is greater than that when depositing the second layer.

The present disclosure is directed to compositions comprising at least one layer having first and second surfaces, each layer comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M.sub.2MnX.sub.n+1, such that each X is positioned within an octahedral array of M and M; wherein M and M each comprise different Group 11113, WE, VB, or VIB metals; each X is C, N, or a combination thereof; n=1 or 2; and wherein the M atoms are substantially present as two-dimensional outer arrays of atoms within the two-dimensional array of crystal cells; the M atoms are substantially present as two-dimensional inner arrays of atoms within the two-dimensional array of crystal cells; and the two dimensional inner arrays of M atoms are sandwiched between the two-dimensional outer arrays of M atoms within the two-dimensional army of crystal cells,

Provided is a production method of a nitride fluorescent material capable of producing a nitride fluorescent material having a higher emission intensity. The production method is for producing a nitride fluorescent material having a composition containing at least one element M.sup.a selected from the group consisting of Sr, Ca, Ba and Mg, at least one element M.sup.b selected from the group consisting of Li, Na and K, at least one element M.sup.c selected from the group consisting of Eu, Ce, Tb and Mn, and Al and N, which includes subjecting a raw material mixture containing elements constituting the composition of the nitride fluorescent material, along with SrF.sub.2 and/or LiF added thereto as a flux, to a heat treatment, wherein the amount of the flux is in a range of 5.0% by mass or more and 15% by mass or less relative to the total amount, 100% by mass of the raw material mixture and the flux.

Methods for pre-lithiating an electroactive material including a Group III element, Group IV element, a Group V element, or a combination thereof for an electrode for an electrochemical cell are provided as well as electrodes including the pre-lithiated electroactive material. The methods include reacting a lithiating agent including LiH or Li.sub.3N with the electroactive material to form a pre-lithiated electroactive material.

The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn.sub.2N.sub.2 or the chemical formula X.sup.1.sub.2ZnN.sub.2 wherein X.sup.1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.

The present disclosure is directed to compositions comprising at least one layer having first and second surfaces, each layer comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M.sub.2M.sub.nX.sub.n+1, such that each X is positioned within an octahedral array of M and M; wherein M and M each comprise different Group IIIB, IVB, VB, or VIB metals; each X is C, N, or a combination thereof; n=1 or 2; and wherein the M atoms are substantially present as two-dimensional outer arrays of atoms within the two-dimensional array of crystal cells; the M atoms are substantially present as two-dimensional inner arrays of atoms within the two-dimensional array of crystal cells; and the two dimensional inner arrays of M atoms are sandwiched between the two-dimensional outer arrays of M atoms within the two-dimensional array of crystal cells.

It is provided a layer of a crystal of a nitride of a group 13 element selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof, and the layer includes an upper surface and a bottom surface. The upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, and the high-luminance light-emitting part has a portion extending along an m-plane of the crystal of the nitride of the group 13 element, in the case that the upper surface is observed by cathode luminescence. The upper surface has an arithmetic average roughness Ra of 0.05 nm or more and 1.0 nm or less.

It is provided a layer of a crystal of a group 13 nitride having an upper surface and lower surface and composed of a crystal of the group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof. In the case that the upper surface of the layer of the crystal of the group 13 nitride is observed by cathode luminescence, the upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part. A half value width of reflection at (0002) plane of an X-ray rocking curve on the upper surface is 3000 seconds or less and 20 seconds or more.