C01B21/0821

Method for manufacturing negative active material, and negative active material and lithium secondary battery using same

A method for preparing a negative electrode active material, a negative electrode active material prepared using the same, and a lithium secondary battery, and in particular, to a method for preparing a negative electrode active material including the steps of (a) preparing a coating composition including a precursor of metal-phosphorus-oxynitride; (b) forming a precursor layer on a negative electrode active material with the coating composition of (a) using a solution process; and (c) forming a metal-phosphorus-oxynitride protective layer on the negative electrode active material by heat treating the negative electrode active material having the precursor layer formed thereon. The method for preparing a negative electrode active material uses a solution process, which is advantageous in terms of simplifying the whole process and reducing costs, and high capacity, high stabilization and long lifetime are obtained as well by the formed protective layer having excellent properties.

Photoelectrochemical water splitting method

A GaON/ZnO photoelectrode involving a nanoarchitectured photocatalytic material deposited onto a surface of a conducting substrate, and the nanoarchitectured photocatalytic material containing gallium oxynitride nanoparticles interspersed in zinc oxide nanoparticles, as well as methods of preparing the GaON/ZnO photoelectrode. A method of using the GaON/ZnO photoelectrode for solar water electrolysis is also provided.

Photo electrochemical cell for water splitting

A GaON/ZnO photoelectrode involving a nanoarchitectured photocatalytic material deposited onto a surface of a conducting substrate, and the nanoarchitectured photocatalytic material containing gallium oxynitride nanoparticles interspersed in zinc oxide nanoparticles, as well as methods of preparing the GaON/ZnO photoelectrode. A method of using the GaON/ZnO photoelectrode for solar water electrolysis is also provided.

Synthesis of metal oxynitrides using flame spray pyrolysis

The present disclosure is directed to methods for producing metal oxynitrides using flame synthesis. Embodiments of the disclosure may provide advantages over prior synthesis techniques by reducing synthesis time. Additionally, methods and systems disclosed herein may achieve better incorporation of nitrogen atoms into the oxide structure due in part to the higher homogeneity of flame made particles and ability to control the reaction environment.

Synthesis of Metal Oxynitrides Using Flame Spray Pyrolysis

The present disclosure is directed to methods for producing metal oxynitrides using flame synthesis. Embodiments of the disclosure may provide advantages over prior synthesis techniques by reducing synthesis time. Additionally, methods and systems disclosed herein may achieve better incorporation of nitrogen atoms into the oxide structure due in part to the higher homogeneity of flame made particles and ability to control the reaction environment.

Black-film-forming mixed powder

Provided is a black-film-forming mixed powder containing: (A) a zirconium nitride powder that does not contain zirconium dioxide, a low-order oxide of zirconium, or a low-order oxynitride of zirconium; and (B) a titanium nitride powder or a titanium oxynitride powder, wherein the content ratio of (A) the zirconium nitride powder and (B) the titanium nitride powder or the titanium oxynitride powder is within the range of 90:10 to 25:75 in terms of mass ratio (A:B). When the light transmittance at a wavelength of 400 nm is X, the light transmittance at a wavelength of 550 nm is Y, and the light transmittance at a wavelength of 1,000 nm is Z in a spectrum of a dispersion in which the mixed powder is dispersed in a concentration of 50 ppm, X>10%, Y<10%, Z<16%, X/Y is 1.25 or more, and Z/Y is 2.0 or less.

THIN FILMS OF NICKEL-COPPER BINARY OXYNITRIDE (NICUOxNy) AND THE CONDITIONS FOR THE PRODUCTION THEREOF

Thin films of nickel-copper binary oxynitride (NiCuO.sub.xN.sub.y) were deposited on the surface of AISI 3161 stainless steel and glass substrates using reactive phase RF sputtering with a thickness between 700 and 2100 nm under different deposition conditions from a bimetallic precursor target of nickel and copper under specific conditions, such as: base pressure, working pressure, argon flow, oxygen flow, nitrogen flow, power the NiCu precursor target, target-substrate distance and deposition time. The films were characterized and made it possible to carry out a preliminary study of biocompatibility and a characterization according to their optical properties

Method for preparing photomask blank, photomask blank, method for preparing photomask, photomask, and metallic chromium target

A method for preparing a photomask blank comprising a transparent substrate and a chromium-containing film contiguous thereto involves the step of depositing the chromium-containing film by sputtering a metallic chromium target having an Ag content of up to 1 ppm. When a photomask prepared from the photomask blank is repeatedly used in patternwise exposure to ArF excimer laser radiation, the number of defects formed on the photomask is minimized.

Polycrystalline dielectric thin film and capacitor element

A polycrystalline dielectric thin film and a capacitor element have a large relative dielectric constant. The polycrystalline dielectric thin film has a perovskite oxynitride as a principal component. The perovskite oxynitride is represented by compositional formula A.sub.a1B.sub.b1O.sub.oN.sub.n (a1+b1+o+n=5), and the a-axis length of the crystal lattice of the perovskite oxynitride is larger than a theoretical value.

ELECTROCHROMIC FILM AND AN ELECTROCHROMIC DEVICE COMPRISING THE SAME
20200166819 · 2020-05-28 · ·

An electrochromic film and an electrochromic device including the electrochromic film are disclosed. The electrochromic film includes an electrochromic layer and a passivation layer on one side of the electrochromic layer. The coloration level of the electrochromic film is different from the coloration level of the passivation layer. The film may change optical properties as a result of electrochromism according to an electrochemical reaction. The electrochromic film and the electrochromic device have improved electrochromism, excellent durability, excellent color-switching speed, and stepwise control of optical properties.