A copper/ceramic bonded body of the present invention is formed by bonding a copper member, which is formed of copper or a copper alloy, and a ceramic member, in which a ratio D1/D0 is 0.60 or less, D0 being an average crystal grain size of the entire copper member, D1 being an average crystal grain size of the copper member at a position 50 μm from a bonding surface with the ceramic member, D0 and D1 being obtained by observing a cross-section of the copper member along a laminating direction.

Implementations of semiconductor packages may include a metallic baseplate, a first insulative layer coupled to the metallic baseplate, a first plurality of metallic traces, each metallic trace of the first plurality of metallic traces coupled to the electrically insulative, one or more semiconductor devices coupled to each one of the first plurality of metallic traces, a second plurality of metallic traces coupled to the one or more semiconductor devices, and a second insulative layer coupled to the metallic traces of the second plurality of metallic traces.

A method of forming one or more high temperature co-fired ceramic articles, comprising the steps of:— a) forming a plurality of green compacts, by a process comprising dry pressing a powder comprising ceramic and organic binder to form a green compact; b) disposing a conductor or conductor precursor to at least one surface of at least one of the plurality of green compacts to form at least one patterned green compact; c) assembling the at least one patterned green compact with one or more of the plurality of green compacts or patterned green compacts or both to form a laminated assembly; d) isostatically pressing the laminated assembly to form a pressed laminated assembly; e) firing the pressed laminated assembly at a temperature sufficient to sinter the ceramic layers together.

To provide a method of manufacturing power module substrate board at high productivity and a ceramic-copper bonded body in which warps are reduced. In a bonded body-forming step, a circuit layer-forming copper layer consisting of a plurality of first copper layers is formed by arranging and bonding a plurality of first copper boards on a first surface of a ceramic board, and a metal layer-forming copper layer consisting of a second copper layer with a smaller arrangement number than that of the first copper layers is formed by bonding a second copper board having a larger planar area than that of the first copper board and a smaller thickness than that of the first copper board so as to cover at least two of adjacent substrate board-forming areas on a second surface of the ceramic board among the substrate board-forming areas partitioned by the dividing groove.

A power electronic substrate includes a metallic baseplate having a first and second surface opposing each other. An electrically insulative layer also has first and second surfaces opposing each other, its first surface coupled to the second surface of the metallic baseplate. A plurality of metallic traces each include first and second surfaces opposing each other, their first surfaces coupled to the second surface of the electrically insulative layer. At least one of the metallic traces has a thickness measured along a direction perpendicular to the second surface of the metallic baseplate that is greater than a thickness of another one of the metallic traces also measured along a direction perpendicular to the second surface of the metallic baseplate. In implementations the electrically insulative layer is an epoxy or a ceramic material. In implementations the metallic traces are copper and are plated with a nickel layer at their second surfaces.

A support substrate (1), in particular a metal-ceramic substrate, as a support for electric components, comprising: —at least one metal layer (10) and—an insulating element (30), in particular a ceramic element, a glass element, a glass ceramic element, and/or a high temperature-resistant plastic element. The at least one metal layer (10) and the insulating element (30) extend along a main extension plane (HSE) and are arranged one over the other in a stacking direction (S) running perpendicularly to the main extension plane (HSE), wherein in a completed support substrate (1), a binding layer (12) is formed between the at least one metal layer (10) and the insulating element (30), and an adhesive layer (13) of the binding layer (12) has a surface resistance which is greater than 5 Ohm/sq.

The present invention provides a power module substrate including an insulating substrate, a circuit layer which is formed on one surface of the insulating substrate, and a metal layer which is formed on the other surface of the insulating substrate, in which the circuit layer has a first aluminum layer made of aluminum or an aluminum alloy which is bonded to the insulating substrate and a first copper layer made of copper or a copper alloy which is bonded to the first aluminum layer by solid-phase diffusion, the metal layer has a second aluminum layer made of aluminum or an aluminum alloy, and a relationship between a thickness t.sub.1 of the circuit layer and a thickness t.sub.2 of the second aluminum layer of the metal layer satisfy t.sub.1<t.sub.2.

A method of joining a metal-ceramic substrate having metallization on at least one side to a metal body by using metal alloy is disclosed. The metal body has a thickness of less than 1.0 mm and the metal alloy contains aluminum and has a liquidus temperature of greater than 450° C. The resulting metal-ceramic module provides a strong bond between the metal body and the ceramic substrate. The resulting module is useful as a circuit carrier in electronic appliances, with the metal body preferably functioning as a cooling body.

A ceramic structure 10 includes a heater electrode 14 within a disk-shaped AlN ceramic substrate 12. The heater electrode 14 contains a metal filler in the main component WC. The metal filler (such as Ru or RuAl) has a lower resistivity and a higher thermal expansion coefficient than AlN. An absolute value of a difference |ΔCTE| between a thermal expansion coefficient of the AlN ceramic substrate 12 and a thermal expansion coefficient of the heater electrode 14 at a temperature in the range of 40° C. to 1000° C. is 0.35 ppm/° C. or less.

A heat conduction member includes: a cylindrical ceramic body, a metal pipe on the outer periphery side of the cylindrical ceramic body, and an intermediate member held between the cylindrical ceramic body and the metal pipe. The cylindrical ceramic body has passages passing through from one end face to the other end face and allowing the first fluid to flow therethrough. The intermediate member is made of material having at least a part having a Young's modulus of 150 Gpa or less. The first fluid is allowed to flow through the inside of the cylindrical ceramic body while the second fluid having lower temperature than that of the first fluid is allowed to flow on the outer peripheral face side of the metal pipe to perform heat exchange between the first fluid and the second fluid.