There are provide a metal/ceramic bonding substrate wherein the bonding strength of an aluminum plate bonded directly to a ceramic substrate is higher than that of conventional metal/ceramic bonding substrates, and a method for producing the same. The metal/ceramic bonding substrate is produced by a method including the steps of: arranging a ceramic substrate 10 in a mold 20; putting the mold 20 in a furnace; lowering an oxygen concentration to 25 ppm or less and a dew point to −45° C. or lower in the furnace; injecting a molten metal of aluminum into the mold 20 so as to allow the molten metal to contact the surface of the ceramic substrate 10; and cooling and solidifying the molten metal to form a metal plate 14 for circuit pattern of aluminum on one side of the ceramic substrate 10 to bond one side of the metal plate 14 for circuit pattern directly to the ceramic substrate 10, while forming a metal base plate 12 of aluminum on the other side of the ceramic substrate 10 to bond the metal base plate 12 directly to the ceramic substrate 10.

There is provided an aluminum/ceramic bonding substrate having a ceramic substrate, an aluminum plate of an aluminum alloy which is bonded directly to one side of the ceramic substrate, an aluminum base plate of the aluminum alloy which is bonded directly to the other side of the ceramic substrate, and a plate-shaped reinforcing member which has a higher strength than that of the aluminum base plate and which is arranged in the aluminum base plate to be bonded directly to the aluminum base plate, wherein the aluminum alloy contains 0.01 to 0.2% by weight of magnesium, 0.01 to 0.1% by weight of silicon, and the balance being aluminum and unavoidable impurities.

A metal-ceramic substrate having at least one ceramic layer (2), which is provided on a first surface side (2a) with at least one first metallization (3) and on a second surface side (2b), opposite from the first surface side (2a), with a second metallization (4), wherein the first metallization (3) is formed by a film or layer of copper or a copper alloy and is connected to the first surface side (2a) of the ceramic layer (2) with the aid of a “direct copper bonding” process. The second metallization (4) is formed by a layer of aluminum or an aluminum alloy.

A copper heat dissipation material having a satisfactory heat dissipation performance is provided. The copper heat dissipation material has an alloy layer containing at least one metal selected from Cu, Co, Ni, W, P, Zn, Cr, Fe, Sn and Mo on one or both surfaces, in which surface roughness Sz of the one or both surfaces, measured by a laser microscope using laser light of 405 nm in wavelength, is 5 μm or more.

An adapter element (10) for connecting an electronic component (30) to a heat sink element (20), including an insulation layer (15) extending along a main extension plane (HSE), and at least a first web element (11) and a second web element (12), which are arranged next to each other in a direction parallel to the main extension plane (HSE), forming a free area (13), which, in the assembled state, are arranged between the insulating layer (15) and the electronic component (30) in a direction running perpendicular to the main extension plane (HSE), and on whose front sides (18) facing away from the insulating layer (15) the electronic component (30) is arranged in the assembled state, wherein a distance (A) between the first web element (11) and the second web element (12), measured in a plane parallel to the main extension plane (HSE), is smaller than 350 μm.

The invention relates to a process for metallizing ferrite ceramics, which comprises the following steps: arrangement of a contact element composed of copper or a copper alloy on a surface of the ferrite ceramic, melting of the contact element at least in the region in which the contact element contacts the surface of the ferrite ceramic, and cooling of the contact element and the ferrite ceramic to below the melting point of copper or the copper alloy.

A compact, a superabrasive compact and a method of making the compact and superabrasive compact are disclosed. A compact may include a plurality of carbide particles, a binder, and a species. The binder may be dispersed among the plurality of tungsten carbide particles. The species may be dispersed in the compact, wherein the binder has a melting point from about 600° C. to about 1350° C. at ambient pressure. A superabrasive compact may include a diamond table and a substrate. The diamond table may be attached to the substrate. The substrate may have a binder. The melting point of the binder is from about 600° C. to about 1350° C. at high pressure from about 30 kbar to about 100 kbar.

The present invention is a bonded body in which an aluminum member constituted by an aluminum alloy, and a metal member constituted by copper, nickel, or silver are bonded to each other. The aluminum member is constituted by an aluminum alloy in which a solidus temperature is set to be less than a eutectic temperature of a metal element that constitutes the metal member and aluminum. A Ti layer is formed at a bonding portion between the aluminum member and the metal member, and the aluminum member and the Ti layer, and the Ti layer and the metal member are respectively subjected to solid-phase diffusion bonding.

A method of forming a cutting element comprises forming a first material comprising discrete coated particles within a container. The first material is pressed to form a first green structure comprising interbonded coated particles. A second material comprising additional discrete coated particles is formed over the first green structure within the container. The second material is pressed to form a second green structure comprising additional interbonded coated particles. The first green structure and the second green structure are sintered to form a multi-layered cutting table. Additional methods of forming a cutting element, a cutting element, and an earth-boring tool are also described.

One example includes a method for fabricating a compound material. The method includes providing a first discrete material layer having a first thickness dimension. The first discrete material layer includes a first material having a first magnetic susceptibility. The method also includes depositing a second discrete material layer having a second thickness dimension over the first discrete material layer. The second discrete material layer can include a second material having a second magnetic susceptibility. The relative first and second thickness dimensions can be selected to provide a desired magnetic susceptibility of the compound material.