A pressure measuring device includes a ceramic pressure sensor including a ceramic measuring membrane and a sensor mounting configured to secure the pressure sensor such that a membrane region of the measuring membrane surrounded by a membrane edge is contactable with a medium having a pressure to be measured. The sensor mounting includes a titanium or titanium alloy mounting element including an opening through which the membrane region is contactable with the medium. The membrane edge is connected directly with the mounting element by a diffusion weld produced by a diffusion welding method.

A substrate includes a ceramic sintered body, a first circuit plate and a second circuit plate. The ceramic sintered body contains Al, Zr, Y and Mg. In the ceramic sintered body, the Mg content in terms of MgO is S1 mass % and the Zr content in terms of ZrO.sub.2 is S2 mass %, a following formula (1) is established. When a thickness of the first circuit plate is T1 mm, a thickness of the second circuit plate is T2 mm, and a thickness of the ceramic sintered body is T3 mm, following formulas (2), (3), and (4) are established. Formula (1): −0.004×S2+0.171<S1<−0.032×S2+1.427; Formula (2): 1.7<(T1+T2)/T3<3.5; Formula (3): T1≥T2; and Formula (4): T3≥0.25.

The ceramic sintered body contains Zr, Al, Y, and Mg. A Zr content is 7.5 mass % or more and 23.5 mass % or less in terms of ZrO.sub.2. An Al content is 74.9 mass % or more and 91.8 mass % or less in terms of Al.sub.2O.sub.3. A Y content is 0.41 mass % or more and 1.58 mass % or less in terms of Y.sub.2O.sub.3. A Mg content is 0.10 mass % or more and 0.80 mass % or less in terms of MgO. A ZrO.sub.2 crystal phase as a crystal phase has a monoclinic phase and a tetragonal phase as crystal structures. When a thermal aging treatment is performed for 100 hours in an environment of 180 degrees C., a ratio of a peak intensity of the monoclinic phase to a sum of peak intensities of the monoclinic phase and the tetragonal phase is 15% or less in the X-ray diffraction pattern.

An aluminum alloy member is made of an aluminum alloy having a Mg concentration set in a range of 0.4 mass % or more and 7.0 mass % or less and a Si concentration set to less than 1 mass %, the aluminum alloy member and a copper member are bonded to each other through solid-phase diffusion, and a compound layer made up of a first intermetallic compound layer that is disposed on the aluminum alloy member side and made of a θ phase of an intermetallic compound of Cu and Al, a second intermetallic compound layer that is disposed on the copper member side and made of a γ.sub.2 phase of an intermetallic compound of Cu and Al, and a Cu—Al—Mg layer provided between the first intermetallic compound layer and the second intermetallic compound layer is provided in a bonding interface between the aluminum alloy member and the copper member.

A ceramic structure includes a ceramic base member having a main face; a hole extending from the main face into the ceramic base member; a metal electrode layer embedded in the ceramic base member; a conductive member embedded in the ceramic base member so as to be electrically connected to the metal electrode layer and form a bottom of the hole; a first metal member joined to the conductive member by a brazing material and having an average linear expansion coefficient not less than the average linear expansion coefficient of the conductive member; one or a plurality of second metal members having a greater average linear expansion coefficient than the first metal member; and a metal terminal joined to the one or the plurality of second metal members and having a greater average linear expansion coefficient than each second metal member.

An electric heating support includes an electrically conductive honeycomb structure having an outer peripheral wall and porous partition walls disposed on an inner side of the outer peripheral wall, the porous partition walls defining a plurality of cells, each cell penetrating from one end face to other end face to form a flow path. A pair of metal terminals are disposed so as to face each other across a central axis of the honeycomb structure, each metal terminal being joined to a surface of the honeycomb structure via a welded portion. The honeycomb structure is composed of ceramics and a metal. The honeycomb structure contains 40% by volume or less of the metal. The welded portion of the honeycomb structure has a surface containing 40% by volume or more of the metal.

A direct bonded copper ceramic substrate is provided, which includes a nitride ceramic substrate, a first passivation layer, and a first copper layer. The first passivation layer includes aluminum oxide or silicon oxide doped with another metal. The other metal is titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, or a combination thereof. The aluminum or silicon and the other metal have a weight ratio of 60:40 to 99.5:0.5. The first passivation layer is disposed between the top surface of the nitride ceramic substrate and the first copper layer.

Various embodiments include a metal-repaired ceramic matrix composite (CMC) article, and a method of repairing a CMC article having a defect. Particular embodiments include a method including: removing a defect-containing portion of the CMC article; forming at least one opening in a remaining portion of the CMC article; preparing a metal repair preform for replacing at least the removed portion of the CMC article, wherein a portion of the metal repair preform complements the at least one opening; and attaching the metal repair preform to the remaining portion of the CMC article.

A method includes applying a sintering precursor material layer to each of a first surface and a second surface of a ceramic tile, and assembling a precursor assembly of a direct bonded copper (DBC) substrate by coupling a first leadframe on the sinter precursor material layer on the first surface of the ceramic tile and a second leadframe on the second surface of the sinter precursor material layer on a second surface of the ceramic tile such that the ceramic tile is disposed between the first leadframe and the second leadframe. The method further includes sinter bonding the first leadframe and the second leadframe to the ceramic tile to form a sinter bonded DBC substrate.

An improved method for embedding one or more sensors in SiC is provided. The method includes depositing a binder onto successive layers of a SiC powder feedstock to produce a dimensionally stable green body have a true-sized cavity. A sensor component is then press-fit into the true-sized cavity. Alternatively, the green body is printed around the sensor component. The assembly (the green body and the sensor component) is heated within a chemical vapor infiltration (CVI) chamber for debinding, and a precursor gas is introduced for densifying the SiC matrix material. During infiltration, the sensor component becomes bonded to the densified SiC matrix, the sensor component being selected to be thermodynamically compatible with CVI byproducts at elevated temperatures, including temperatures in excess of 1000° C.