An electrically conductive ceramic composite conductor configured for downhole operations includes a first portion formed from an electrically non-conductive ceramic material having a first coefficient of thermal expansion (CTE). The first portion includes an outer surface. A second portion is disposed radially inwardly of the outer surface. The second portion is formed from an electrically conductive ceramic material having a second CTE that is substantially similar to the first CTE.

A sensor component for application temperatures above 700° C., especially electrical and/or electrochemical sensor component is provided. The sensor component has a feedthrough element, the feedthrough element having a through-hole with a through-hole inner wall extending from one surface of the feedthrough element to the other surface of the feedthrough element, wherein an insulation element is located within a through-hole of the feedthrough element, the through-hole has a diameter Da, the insulation element has a Volume V and a height H which are compact.

A composite sintered body includes a base material that contains Al.sub.2O.sub.3 as a main component, and an electrode arranged inside or on a surface of the base material. The electrode contains Ru, ZrO.sub.2, and Al.sub.2O.sub.3.

A method of producing a copper/ceramic bonded body, the copper member having a composition having a Cu purity of 99.96 mass % or more, a balance of inevitable impurities, a P content of 2 mass ppm or less, and a total content of Pb, Se and Te of 10 mass ppm or less, the method includes bonding the laminated copper member and the ceramic member by pressing and heating, wherein an average crystal grain size of the copper member before bonding is 10 μm or more, an aspect ratio is 2 or less, and a pressing load is 0.05 MPa or more and 1.5 MPa or less, a heating temperature is 800° C. or higher and 850° C. or lower, and a holding time at the heating temperature is 10 minutes or longer and 90 minutes or shorter.

A composite member may include an inorganic porous layer on a surface of metal. The inorganic porous layer may include ceramic fibers. The inorganic porous layer may be constituted of 15 mass % or more of an alumina constituent and 45 mass % or more of a titania constituent.

A polycrystalline diamond structure comprises a first region and a second region adjacent the first region, the second region being bonded to the first region by intergrowth of diamond grains. The first region comprises a plurality of alternating strata or layers, each or one or more strata or layers in the first region having a thickness in the range of around 5 to 300 microns. The polycrystalline diamond (PCD) structure has a diamond content of at most about 95 percent of the volume of the PCD material, a binder content of at least about 5 percent of the volume of the PCD material, and one or more of the layers or strata in the first region comprise and/or the second region comprises diamond grains having a mean diamond grain contiguity of greater than about 60 percent and a standard deviation of less than about 2.2 percent. There is also disclosed a method of making such a polycrystalline diamond structure.

An electrical termination unit or feedthrough which may be used for routing electrical conductors through a chamber wall, or otherwise across a barrier between isolated atmospheric conditions. The electrical termination unit may have aluminum as the interface material to the chamber interface and may utilize a ceramic insulator. The electrical termination unit may have the aluminum used as the interface brazed directly to a ceramic surface of the insulator. The aluminum that forms the chamber interface may be formed within a hollow ceramic tube in the same process step that brazes the aluminum to the ceramic tube with a hermetic joint. Machining subsequent to the brazing of the aluminum to the ceramic insulator may allow for achievement of the final form desired. A method for manufacturing such an electrical termination unit.

In a semiconductor device, a first outer edge of a conductive pattern is located between the outermost edge of a first dimple and the innermost edge of a second dimple in a cross-sectional view of the device. When thermal stress due to temperature changes in the semiconductor device is applied to the ceramic circuit board, the first and second dimples suppress deformation of the ceramic circuit board that is caused due to the temperature changes. As a result, cracks in the ceramic circuit board and separation of the metal plate and the conductive pattern are prevented.

A method of forming one or more high temperature co-fired ceramic articles, comprising the steps of:— a) forming a plurality of green compacts, by a process comprising dry pressing a powder comprising ceramic and organic binder to form a green compact; b) disposing a conductor or conductor precursor to at least one surface of at least one of the plurality of green compacts to form at least one patterned green compact; c) assembling the at least one patterned green compact with one or more of the plurality of green compacts or patterned green compacts or both to form a laminated assembly; d) isostatically pressing the laminated assembly to form a pressed laminated assembly; e) firing the pressed laminated assembly at a temperature sufficient to sinter the ceramic layers together.

An NTC compound, a thermistor and a method for producing a thermistor are disclosed. In an embodiment an NTC compound includes a ceramic material of a Mn—Ni—O system as a main constituent, wherein the Mn—Ni—O system has a general composition Ni.sub.xMn.sub.2O.sub.4-δ, wherein y corresponds to a molar fraction of Ni of a total metal content of the ceramic material of the Mn—Ni—O system, which is defined as c(Ni):(c(Ni)+c(Mn)), and wherein the following applies: 0.500<x<0.610 and 0.197<y<0.240.