Cutting elements include a diamond-bonded body attached with a substrate. The substrate has a coercivity of greater than about 200 Oe, and has a magnetic saturation of from about 73 to 90. The diamond-bonded body has a compressive stress at the surface of greater than about 0.9 GPa after heat treatment, and greater than about 1.2 GPa prior to heat treatment.

An oxide sintered body has metal elements of In, Ga, Zn, and Sn and contains Ga.sub.2In.sub.6Sn.sub.2O.sub.16, ZnGa.sub.2O.sub.4, and InGaZnO.sub.4. The contents of In, Ga, Zn, and Sn in the oxide sintered body satisfy the relations [Ga]37 atomic %, [Sn]15 atomic %, and [Ga]/([In]+[Zn])0.7, where [In], [Ga], [Zn], and [Sn] represent ratios (atomic %) of In, Ga, Zn, and Sn with respect to all metal elements contained in the oxide sintered body, respectively.

The present invention provides a metal-ceramic base material and the like which allow a ceramic base material and a desired metal material to be easily joined. A metal-ceramic base material (30) to be joined to a metal material (40), includes: a ceramic base material (20); and a metal film (25) provided on the ceramic base material (20), the metal film (25) being formed by thermal spray of a mixed powder material containing aluminum, alumina, and nickel, at least part of the nickel being exposed on a surface of the metal film (25).

A soldering material (1) for active soldering, in particular for active soldering of a metallization (3) to a carrier layer (2) comprising ceramics, wherein the soldering material comprises copper and is substantially silver-free.

A bonded body of copper and ceramic includes: a copper member made of copper or a copper alloy and a ceramic member made of an aluminum oxide, the copper member and the ceramic member being bonded to each other; a magnesium oxide layer which is formed on a ceramic member side between the copper member and the ceramic member; and a Mg solid solution layer which is formed between the magnesium oxide layer and the copper member and contains Mg in a state of a solid solution in a Cu primary phase, in which one or more active metals selected from Ti, Zr, Nb, and Hf are present in the Mg solid solution layer.

After a copper plate 14 is bonded to at least one surface of a ceramic substrate 10 via an active metal containing brazing filler metal 12 which contains silver, the unnecessary portion of the copper plat 14 and active metal containing brazing filler metal 12 is removed, and thereafter, an unnecessary portion of the copper plate 14 is removed by chemical polishing so as to cause the active metal containing brazing filler metal 12 to protrude from the side face portion of the copper plate 14, and then, a silver layer 18 adhered to the surface of the copper plate 14 by the chemical polishing is removed.

A joined body 10 is manufactured by joining a Mo- or Ti-made terminal 14 having a Ni coating, a Au coating, a NiAu coating (with Ni Serving as a base) to a recess 12a formed in a plate-shaped ceramic member 12 made of alumina or aluminum nitride through a joint layer 16. The joint layer 16 contains Au, Sn, Ag, Cu, and Ti and is in contact with a bottom surface of the recess 12a and with at least part of a side surface of the recess 12a (the entire side surface in this case). In the joint layer 16, its joint interface with the ceramic member 12 is Ti-rich. When the joined body 10 is cut in its thickness direction, the ratio of the total cross sectional area of pores to the cross-sectional area of the joint layer 16 (porosity) is 0.1 to 15%.

A method for producing a metal-ceramic substrate includes attaching a metal layer to a surface side of a ceramic layer, the metal layer being structured into a plurality of metallization regions respectively separated from one another by at least one trench-shaped intermediate space to form conductive paths and/or connective surfaces and/or contact surfaces. The method further includes filling the at least one trench-shaped intermediate space with an electrically insulating filler material, and covering first edges of the metallization regions facing and adjoining the surface side of the ceramic layer in the at least one trench-shaped intermediate space, as well as at least one second edge of the metallization regions facing away from the surface side of the ceramic layer in the at least one trench-shaped intermediate space, by the electrically insulating filler material.

A turbine component assembly is disclosed, including a first component, a second component, and an interface shield. The first component is arranged to be disposed adjacent to a hot gas path, and includes a ceramic matrix composite composition. The second component is adjacent to the first component and arranged to be disposed distal from the hot gas path across the first component. The interface shield is disposed on a contact region of the first component, and directly contacts the second component.

In a semiconductor device, a first outer edge of a conductive pattern is located between the outermost edge of a first dimple and the innermost edge of a second dimple in a cross-sectional view of the device. When thermal stress due to temperature changes in the semiconductor device is applied to the ceramic circuit board, the first and second dimples suppress deformation of the ceramic circuit board that is caused due to the temperature changes. As a result, cracks in the ceramic circuit board and separation of the metal plate and the conductive pattern are prevented.