C04B2237/40

Semiconductor device
11133271 · 2021-09-28 · ·

In a semiconductor device, a first outer edge of a conductive pattern is located between the outermost edge of a first dimple and the innermost edge of a second dimple in a cross-sectional view of the device. When thermal stress due to temperature changes in the semiconductor device is applied to the ceramic circuit board, the first and second dimples suppress deformation of the ceramic circuit board that is caused due to the temperature changes. As a result, cracks in the ceramic circuit board and separation of the metal plate and the conductive pattern are prevented.

ROTOR ASSEMBLY WITH INTERNAL VANES
20210222572 · 2021-07-22 ·

A rotor assembly is provided for a gas turbine engine. This rotor assembly includes a first rotor disk, a second rotor disk, a plurality of rotor blades and a plurality of vanes. The first rotor disk is configured to rotate about a rotational axis. The first rotor disk is configured from or otherwise includes disk material. The second rotor disk is configured to rotate about the rotational axis. The rotor blades are arranged circumferentially around the rotational axis. Each of the rotor blades is axially between and mounted to the first rotor disk and the second rotor disk. The vanes are arranged circumferentially around the rotational axis and axially between the first rotor disk and the second rotor disk. The vanes include a first vane, which first vane is configured from or otherwise includes vane material that is different than the disk material.

ROTOR ASSEMBLY WITH MULTIPLE ROTOR DISKS
20210222557 · 2021-07-22 ·

A rotor assembly is provided for a gas turbine engine. This rotor assembly includes a first rotor disk, a second rotor disk, a plurality of rotor blades and a plurality of disk mounts. The first rotor disk is configured to rotate about a rotational axis. The second rotor disk is configured to rotate about the rotational axis. The rotor blades are arranged circumferentially around the rotational axis. Each of the rotor blades is mounted to the first rotor disk and to the second rotor disk. The rotor blades include a first rotor blade. Each of the disk mounts connects the first rotor disk and the second rotor disk together. The disk mounts include a first disk mount that further supports the first rotor blade.

ROTOR ASSEMBLY WITH INTERNAL VANES
20210222562 · 2021-07-22 ·

A rotor assembly is provided for a gas turbine engine. This rotor assembly includes a first rotor disk, a second rotor disk, a plurality of rotor blades and a plurality of vanes. The first rotor disk is configured to rotate about a rotational axis. The second rotor disk is configured to rotate about the rotational axis. The rotor blades are arranged circumferentially around the rotational axis. Each of the rotor blades is axially between and mounted to the first rotor disk and the second rotor disk. The vanes are arranged circumferentially around the rotational axis. The vanes include a first vane that is integral with the first rotor disk and projects axially to the second rotor disk.

CERAMIC STRUCTURAL BODY
20210292247 · 2021-09-23 ·

A ceramic structural body includes a substrate that is composed of a ceramic(s), a hole that is opened on a surface of the substrate, and a seal material that is positioned at an opening portion of the hole.

COPPER-CERAMIC COMPOSITE
20210188718 · 2021-06-24 ·

The invention relates to a copper-ceramic composite comprising:—a ceramic substrate;—a copper or copper alloy coating in which the copper or copper alloy has grain sizes of 10 μm to 300 μm and a number distribution of the grain sizes with a median d.sub.50 and an arithmetic mean d.sub.arith, the ratio of d.sub.50 to d.sub.arith (d.sub.50/d.sub.arith) being between 0.75 and 1.10.

METAL-CERAMIC SUBSTRATE AND METHOD FOR PRODUCING A METAL-CERAMIC SUBSTRATE
20210188719 · 2021-06-24 ·

A metal-ceramic substrate (1) comprising an insulating layer (11) comprising a ceramic and having a first thickness (D1), and a metallization layer (12) bonded to the insulation layer (11) and having a second thickness (D2),
wherein the first thickness (D1) is less than 250 μm and the second thickness (D2) is greater than 200 μm and wherein the first thickness (D1) and the second thickness (D2) are dimensioned such that a ratio of an amount of the difference between a thermal expansion coefficient of the metallization layer (12) and a thermal expansion coefficient of the metal-ceramic substrate (1) to a thermal expansion coefficient of the metal-ceramic substrate (1)
has a value less than 0.25, preferably less than 0.2 and more preferably less than 0.15 or even less than 0.1.

Copper/ceramic composite

The invention relates to a copper/ceramic composite comprising—a ceramic substrate which contains aluminum oxide, —a coating which lies on the ceramic substrate and which is made of copper or a copper alloy, wherein the copper or the copper alloy has a particle size number distribution with a median value d.sub.50, an arithmetic mean value d.sub.arith, and a symmetry value S(Cu)=d.sub.50/d.sub.arith; the aluminum oxide has a particle size number distribution with a median value d.sub.50, an arithmetic mean value d.sub.arith, and a symmetry value S(Al.sub.2O.sub.3)=d.sub.50/d.sub.arith; and S(Al.sub.2O.sub.3) and S(Cu) satisfy the following condition: 0.7≤S(Al.sub.2O.sub.3)/S(Cu)≤1.4.

Ceramic structure, member for substrate-holding apparatus, and method for producing the ceramic structure
11011404 · 2021-05-18 · ·

The ceramic structure 10 includes a discoid ceramic base 12 and an electrode 14 buried in the ceramic base 12. The ceramic base 12 is a sintered body composed principally of alumina or a rare-earth metal oxide and has a thermal expansion coefficient of 7.5 to 9.5 ppm/K over the range of 40° C. to 1200° C. The electrode 14 is composed principally of metal ruthenium. The electrode 14 may be formed in the shape of a sheet. Alternatively, the electrode 14 may be patterned in the manner of a one-stroke sketch so as to extend over the entire cross section of the ceramic base 12.

Rare-earth oxide based chamber material

An article comprises a plasma resistant ceramic material comprising Y.sub.2O.sub.3 at a concentration of approximately 30 molar % to approximately 60 molar %, Er.sub.2O.sub.3 at a concentration of above 30 molar % to approximately 60 molar %, and at least one of ZrO.sub.2, Gd.sub.2O.sub.3 or SiO.sub.2 at a concentration of over 0 molar % to approximately 30 molar %.