A reaction-bonded silicon carbide (SiC) body is produced by: providing a preform including ceramic elements and carbon, and one or more surface features; providing a powder which includes diamond particles and carbon; locating the powder in the surface feature(s); and infiltrating the preform and the powder with molten silicon (Si) to form reaction-bonded SiC in the preform, and to form reaction-bonded SiC coatings on the diamond particles. The present disclosure also relates to a device/component which includes: a main body portion and discrete elements located at least partially within the main body portion. The main body portion may include reaction-bonded SiC and Si, but not diamond, while the discrete elements include diamond particles, reaction-bonded SiC coatings surrounding the diamond particles, and Si. According to the present disclosure, diamond may be advantageously located only where it is needed.

The present disclosure relates to a method for manufacturing a ceramic heater. The method for manufacturing a ceramic heater according to the present disclosure comprises: separately charging a ceramic powder into a center portion and multiple split edge portions in a formation mold and leveling the charged ceramic powder; manufacturing a molded body or pre-sintered body of the ceramic powder from the leveled ceramic powder; disposing a high-frequency electrode or a heating element on the molded body or pre-sintered body of the ceramic powder and filling a second ceramic powder; and integrally sintering the molded body or pre-sintered body of the ceramic powder and the second ceramic powder.

A ceramic heater includes: a ceramic plate which is provided with a wafer placement surface on an upper surface and in which a heating resistor is internally embedded; a ceramic tubular shaft with an upper end bonded to a lower surface of the plate; and power feeding members which penetrate a peripheral wall part of the tubular shaft in a vertical direction, and are electrically connected to the heating resistor. The power feeding members are embedded in the peripheral wall part of the tubular shaft, and are in tight contact with a ceramic material of the tubular shaft.

A ceramic member includes: a ceramic sintered body; and a conductive member of aluminum or an aluminum alloy provided in the sintered body.

A layer arrangement for an electrostatic chuck comprises a first ceramic layer; a second ceramic layer; a metallised layered disposed between the first and second ceramic layers. The first ceramic layer comprises at least 90.0 wt % 5 alumina, titania, ZrO.sub.2, Y2O.sub.3, AlN, Si.sub.3N.sub.4, SiC, transition metal oxides or combinations thereof; and in the range of 0.1 to 10.0 wt % tantalum oxide (Ta.sub.2O.sub.5).

A method of manufacturing an electrostatic chuck includes: preparing a first ceramic plate having a first hole formed therein; preparing a second ceramic plate having a second hole formed at a position different from a position of the first hole in a horizontal direction; forming a first slurry layer on the first ceramic plate or the second ceramic plate with a first slurry, the first slurry layer having a flow path formed therein to connect the first hole and the second hole; stacking the first ceramic plate and the second ceramic plate one above the other via the first slurry layer; and bonding the first ceramic plate and the second ceramic plate stacked one above the other via the first slurry layer.

A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.

A dielectric ceramic composition includes a base material main component of barium titanate and a subcomponent. A microstructure of the dielectric ceramic composition after sintering includes a first grain having a Ca content of less than 3.5 at % and a second grain having a Ca content of 3.5 to 13.5 at %, and an area ratio of the second grain to an area of the total grains is 70% to 95%.

LTCC devices are produced from dielectric compositions include a mixture of precursor materials that, upon firing, forms a dielectric material having a magnesium-silicon oxide host. An associated Ag system for LTCC conductors is also described.

A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.