A ceramic matrix composite component and a ceramic insert, and a method for producing the same. The ceramic matrix composite component may include an exterior surface comprising silicon fibers in a silicon carbide matrix. The insert may include a continuous porosity bonded to the exterior surface of the ceramic matrix composite component. The silicon carbide matrix of the ceramic matrix composite component may extend into the porosity of the ceramic insert to bond the ceramic insert to the ceramic matrix composite component.

A method for producing a composite material comprising a planar base material to which an additional layer is applied on one side or both sides via a solder layer, characterized by: providing the base material, wherein the base material has a first surface on at least one side; providing the additional layer and arranging the solder layer between a second surface of the additional layer and the first surface such that when the additional layer is deposited on the first surface, the first surface of the base material is covered by the solder layer in a planar manner; wherein a thickness of the solder layer between the base material and the additional layer is smaller than 12 m; heating the base material and the additional layer on the first surface to at least partially melt the solder layer; and connecting the base material to the at least one additional layer.

An article includes a ceramic wall that defines at least a side of a passage. The ceramic wall includes a flow turbulator that projects into the passage. The flow turbulator is formed of ceramic matrix composite. A gas turbine engine is also disclosed. The gas turbine engine includes a compressor section, a combustor in fluid communication with the compressor section, and a turbine section in fluid communication with the combustor. At least one of the turbine section or the compressor section including the article.

The present disclosure is directed to light converter assemblies with enhanced heat dissipation. A light converter assembly may comprise a confinement material applied to at least a first substrate and a phosphor material also deposited on the first substrate so as to be surrounded by the confinement material. The first substrate may be hermetically sealed to a second substrate using the confinement material so that the phosphor material is confined between the substrates and protected from atmospheric contamination. The substrates may comprise, for example, sapphire to allow for light beam transmission and heat conductance. Confinement materials that may be employed to seal the first substrate to the second substrate may include, for example, silicon or a metal (e.g., silver, copper, aluminum, etc.) The phosphor material may comprise, for example, at least one quantum dot material.

The invention relates to a method for producing a metal-ceramic substrate including first and second metallizations and at least one ceramic layer incorporated between the first and second metallizations. Advantageously, first and second metal layers and the at least one ceramic layer are stacked superposed, and in such a way that the free edge sections, of the first and second metal layers respectively, project beyond the edges of the at least one ceramic layer and the first and second metal layers are deformed toward each other in the region of the projecting free edge sections and directly connected to each other in order to form a gas-tight, sealed metal container enclosing a container interior for receiving the at least one ceramic layer. Subsequently, the metal layers forming the metal container with the at least one ceramic layer received in the container interior are hot isostatically pressed together in a treatment chamber at a gas pressure between 500 and 2000 bar and at a process temperature between 300 C. and the melting temperature of the metal layers for producing a preferably flat connection of at least one of the metal layers and the at least one ceramic layer, and at least the projecting free edge sections, which are connected to each other, of the metal layers for forming the first and second metallization are subsequently removed.

In a step (a), a ceramic substrate, a brazing material including a metal having a large thermal expansion coefficient, a porous body having a smaller thermal expansion coefficient than the brazing material, and a feeding terminal are placed on a joint surface in such a way that a joint surface of the feeding terminal faces a joint surface of the ceramic substrate. In a step (b), the brazing material is fused to allow the brazing material to penetrate into the pores of the porous body. In this manner, a joint layer containing the brazing material and the porous body is formed, and the joint surface of the ceramic substrate and the joint surface of the feeding terminal are joined to each other through the joint layer.

A milling device is rotatable in one direction around a longitudinal center axis defining a forward direction and an opposite rearward direction, and includes a front part and a rear part. The front part has cutting edges, each having a longitudinal extension, and chip flutes, each having a longitudinal extension. The front part is made of a monolithic piece of ceramic. The rear part is configured to be fixed in a rotatable tool body or a rotatable chuck. The rear part is also made of a monolithic piece of cemented carbide. A front end surface of the rear part has a smaller area than a rear end surface of the front part. The front end surface of the rear part and a rear end surface of the front part are permanently bonded or brazed to each other by a joint.

The present invention provides a high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m.Math.K or more and a three-point bending strength of 600 MPa or more, wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest peak intensities detected at diffraction angles of 29.30.2, 29.70.2, 27.00.2, and 36.10.2 are expressed as I.sub.29.3, I.sub.29.7, I.sub.27.0, and I.sub.36.1, a peak ratio (I.sub.29.3)/(I.sub.27.0+I.sub.36.1) satisfies a range of 0.01 to 0.08, and a peak ratio (I.sub.29.7)/(I.sub.27.0+I.sub.36.1) satisfies a range of 0.02 to 0.16. Due to above configuration, there can be provided a silicon nitride sintered body having a high thermal conductivity of 50 W/m.Math.K or more, and excellence in insulating properties and strength.

A cover lid for use with a semiconductor package is disclosed. First, a polyamide mask is applied to one surface of the lid plate. Next, the exposed areas of the surface, as well as the sides of the lid plate, are metallized. The polyamide mask can then be removed. This reduces pullback and shrinkage of the metallized layer, while lowering the manufacturing cost and process times.

A ceramic-metal structure in which a metallic body (2) is inserted into or disposed above a through hole (4h) of a ceramic substrate (4) and which includes an annular pad layer (6) disposed around the through hole; an annular ring member (8) joined to the pad layer via a first brazing filler portion (10) and having a coefficient of thermal expansion smaller than that of the metallic body; a second brazing filler portion (12) intervening between the ring member and metallic body; and brazing filler flow prevention layers (7a, 7b) covering an outer surface of the pad layer so as to expose a central region (6c) of the outer surface of the pad layer facing the first brazing filler portion. The first brazing filler portion joins the central region and the ring member without projecting to a radially inner or outer side of the flow prevention layers.