Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I:

##STR00001##

wherein R.sup.1 is selected from linear or branched C.sub.3 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.10 alkenyl group, linear or branched C.sub.3 to C.sub.10 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, electron withdrawing group, and C.sub.6 to C.sub.10 aryl group; R.sup.2 is selected from hydrogen, linear or branched C.sub.1 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.6 alkenyl group, linear or branched C.sub.3 to C.sub.6 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, C.sub.6 to C.sub.10 aryl group, linear or branched C.sub.1 to C.sub.6 fluorinated alkyl group, electron withdrawing group, and C.sub.4 to C.sub.10 aryl group; optionally wherein R.sup.1 and R.sup.2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I:

##STR00001##

wherein R.sup.1 is selected from linear or branched C.sub.3 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.10 alkenyl group, linear or branched C.sub.3 to C.sub.10 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, electron withdrawing group, and C.sub.6 to C.sub.10 aryl group; R.sup.2 is selected from hydrogen, linear or branched C.sub.1 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.6 alkenyl group, linear or branched C.sub.3 to C.sub.6 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, C.sub.6 to C.sub.10 aryl group, linear or branched C.sub.1 to C.sub.6 fluorinated alkyl group, electron withdrawing group, and C.sub.4 to C.sub.10 aryl group; optionally wherein R.sup.1 and R.sup.2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

The present invention relates to novel microporous zirconium silicate compositions that are formulated to remove toxins, e.g. potassium ions, from the gastrointestinal tract at an elevated rate without causing undesirable side effects. The preferred formulations are designed avoid increase in pH of urine in patients and/or avoid potential entry of particles into the bloodstream of the patient. Also disclosed is a method for preparing high purity crystals of UZSi-9 exhibiting an enhanced level of potassium exchange capacity. These compositions are particularly useful in the therapeutic treatment of hyperkalemia.

A green route for preparing a metal organic framework include mixing metal precursor with a ligand precursor to form a solvent-free mixture; adding droplets of water to the mixture; heating the mixture at a first temperature after adding the water; and isolating the metal organic framework material including the metal and the ligand.

Organic electronic devices comprising a covalently bonded organic/inorganic composite layer. The composite layer may be formed by the reaction of a metal alkoxide with a charge transport compound having one or more hydroxyl groups. Examples of metal alkoxides that can be used include vanadium alkoxides, molybdenum alkoxides, titanium alkoxides, or silicon alkoxides. This composite layer can be used for any of the various charge conducting layers in an organic electronic device, including the hole injection layer.

Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula Si.sub.xC.sub.yN.sub.z. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. The classes of compounds are generally represented by the formulas: ##STR00001## and mixtures thereof, wherein R and R.sup.1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R.sup.1 in formula A also being combinable into a cyclic group, and R.sup.2 representing a single bond, (CH.sub.2).sub.n, a ring, or SiH.sub.2.

The functionalized silica for the synthesis of metal nanoparticles includes a silica surface functionalized by a hydrazino-triazine derivative. A method of preparing the functionalized silica includes the steps of combining silica gel and a triazine derivative in a first organic solvent to form a mixture; heating the mixture for about two hours; isolating a white solid by filtration; washing the solid with the first organic solvent; suspending the white solid in a second organic solvent to form a suspension; adding hydrazine hydrate to the suspension while stirring; heating the suspension for about 3 hours to form the silica surface functionalized by a hydrazino-triazine derivative; and isolating the silica surface functionalized by a hydrazino-triazine derivative by filtration.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: ##STR00001##
wherein R.sup.1 is selected from linear or branched C.sub.3 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.10 alkenyl group, linear or branched C.sub.3 to C.sub.10 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, electron withdrawing group, and C.sub.6 to C.sub.10 aryl group; R.sup.2 is selected from hydrogen, linear or branched C.sub.1 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.6 alkenyl group, linear or branched C.sub.3 to C.sub.6 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, C.sub.6 to C.sub.10 aryl group, linear or branched C.sub.1 to C.sub.6 fluorinated alkyl group, electron withdrawing group, and C.sub.4 to C.sub.10 aryl group; optionally wherein R.sup.1 and R.sup.2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: ##STR00001##
wherein R.sup.1 is selected from linear or branched C.sub.3 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.10 alkenyl group, linear or branched C.sub.3 to C.sub.10 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, electron withdrawing group, and C.sub.6 to C.sub.10 aryl group; R.sup.2 is selected from hydrogen, linear or branched C.sub.1 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.6 alkenyl group, linear or branched C.sub.3 to C.sub.6 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, C.sub.6 to C.sub.10 aryl group, linear or branched C.sub.1 to C.sub.6 fluorinated alkyl group, electron withdrawing group, and C.sub.4 to C.sub.10 aryl group; optionally wherein R.sup.1 and R.sup.2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

A polyorganosiloxane resin represented by the following general formula (5): (R.sub.3SiO.sub.1/2).sub.1(R.sub.2SiO.sub.2/2).sub.m(RSiO.sub.3/2).sub.n(SiO.sub.4/2).sub.o (5) wherein R is, independently of each other, a hydrogen atom or a monovalent hydrocarbon group having 1 to 18 carbon atoms, and optionally having an oxygen, halogen, nitrogen or sulfur atom; 1, m and o are, independently of each other, an integer of from 0 to 10,000; n is an integer of from 1 to 10,000; a total of 1, m and n is from 2 to 30,000; and at least one R is a hydrogen atom and at least one R is an OX group in the molecule, wherein X is an alkyl group having 1 to 10 carbon atoms or an alkoxyalkyl group having 2 to 10 carbon atoms; and at least one hydrogen atom and at least one OX group bond to one and the same silicon atom.