A method for producing coated semiconductor nanoparticles, comprising a step of coating the surface of semiconductor nanoparticles with a metal oxide, wherein the surface of the semiconductor nanoparticles is coated with the metal oxide by treating a metal oxide precursor with microwave irradiation treatment.

Provided are a near-infrared II polymer fluorescent sub-microsphere and a method for preparing the same. The method includes steps of 1) dissolving fluorochrome in a water-immiscible organic solvent, thus obtaining a fluorochrome solution; 2) distributing a polymer sub-microsphere into a sodium dodecyl sulfonate solution, thus obtaining a sub-microsphere solution with the polymer sub-microsphere as a carrier for the fluorochrome; 3) subjecting a first mixture of the fluorochrome solution and the sub-microsphere solution to ultrasonic treatment, thus obtaining an emulsion; 4) swelling the emulsion such that the fluorochrome solution enters nanopores formed during swelling of the polymer sub-microsphere, thus obtaining a second mixture; and 5) heating the second mixture to volatilize the organic solvent, such that the fluorochrome is crystallized out and encapsulated in the nanopores, thus obtaining the near-infrared II polymer fluorescent sub-microsphere.

The present disclosure provides a quantum dot. The quantum dot includes a group III-V quantum dot core, and at least one type of halide ions, acetylacetonate ions, or hydroxyl ions bound to a surface of the group III-V quantum dot core, where the halide ions, the acetylacetonate ions and the hydroxyl ions are bound with group III cations on the surface of the group III-V quantum dot core.

Tetrapod-shaped quantum dots having a tetrapod shape in which a core includes a plurality of arms, and each of the arms have a different growth degree depending on the crystal direction.

An ink including at least one colloidal dispersion of particles and at least one metal halide binder, wherein the binder is a dissociated salt of metal and halogen. Also, a method for preparing a light-sensitive material, a light-sensitive material obtainable by the method, and a device including at least one light-sensitive material obtainable by the method.

The present invention relates to a method for producing an InP-based quantum dot precursor from a phosphorus source and an indium source, in which a silylphosphine compound represented by the following Formula (1) with a content of a compound represented by the following Formula (2) of 0.3 mol % or less is used as the phosphorus source. Further, the present invention provides a method for producing an InP-based quantum dot comprising heating an InP quantum dot precursor to a temperature of 200° C. or more and 350° C. or less to obtain an InP quantum dot.

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(R is as defined in the specification.)

In accordance with the purpose(s) of the present disclosure, as embodied and broadly described herein, the disclosure, in one aspect, relates to compound Bi-poor perovskite crystals, methods for making the same, and ionizing and other electromagnetic radiation detectors constructed using the Bi-poor perovskite crystals. The Bi-poor perovskite crystals can be synthesized using melt-based growth methods and solution-based growth methods and contain no toxic heavy metals such as lead, cadmium, thallium, or mercury. Devices fabricated from the crystals maintain acceptable levels of performance over time. In some aspects, post-growth annealing can be used to improve the properties, including, but not limited to, room temperature resistivity and response to radiation.

Provided is a preparing method of a quantum dot, including a process of preparing a solution containing a group III precursor and a solvent, a process of reducing a group V precursor by using a compound represented by Chemical Formula 1, and a process of mixing the solution with the reduced group V precursor.

A method of producing nanoparticles comprises effecting conversion of a molecular cluster compound to the material of the nanoparticles. The molecular cluster compound comprises a first ion and a second ion to be incorporated into the growing nanoparticles. The conversion can be effected in the presence of a second molecular cluster compound comprising a third ion and a fourth ion to be incorporated into the growing nanoparticles, under conditions permitting seeding and growth of the nanoparticles via consumption of a first molecular cluster compound.

A quantum dot including a nanoparticle template including a first semiconductor nanocrystal including a Group II-VI compound, a quantum well including a second semiconductor nanocrystal disposed on the nanoparticle template, the second semiconductor nanocrystal including a Group IIIA metal excluding aluminum and a Group V element; and a shell comprising a third semiconductor nanocrystal disposed on the quantum well, the third semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dot does not include cadmium, a band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the first semiconductor nanocrystal, the band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the third semiconductor nanocrystal, and the quantum dot includes an additional metal including an alkali metal, an alkaline earth metal, aluminum, iron, cobalt, nickel, copper, zinc, or a combination thereof.