C11D1/40

Multi-surfactant systems comprising lauric arginate ethyl ester and fatty acid

Multi-surfactant systems where two or more surfactant molecules are coupled to control the spatial distribution of polar groups of the combined surfactant molecules are disclosed. The system can be implemented by an aqueous medium including an associate charge constant surfactant and charge variable surfactant. The charge variable surfactant has at least one neutral end group at one pH value of the medium and at least one either an anionic polar group or a cationic polar group at a different pH value of the medium. The charge constant surfactant has at least one, and preferably two or more groups that does not change charge at the one or different pH values of the aqueous medium. The multi-surfactant system can be coupled or connected to the surface of a substrate where the arrangement of the two or more coupled surfactant molecules control the polarity of the substrate surface.

Multi-surfactant systems comprising lauric arginate ethyl ester and fatty acid

Multi-surfactant systems where two or more surfactant molecules are coupled to control the spatial distribution of polar groups of the combined surfactant molecules are disclosed. The system can be implemented by an aqueous medium including an associate charge constant surfactant and charge variable surfactant. The charge variable surfactant has at least one neutral end group at one pH value of the medium and at least one either an anionic polar group or a cationic polar group at a different pH value of the medium. The charge constant surfactant has at least one, and preferably two or more groups that does not change charge at the one or different pH values of the aqueous medium. The multi-surfactant system can be coupled or connected to the surface of a substrate where the arrangement of the two or more coupled surfactant molecules control the polarity of the substrate surface.

Cleaning solution and cleaning method for material comprising carbon-incorporated silicon oxide for use in recycling wafer

It is an object of the present invention to provide a cleaning solution for removing carbon-incorporated silicon oxide (SiOC) from the surface of a wafer in a step of producing a wafer having a material comprising the SiOC, and a cleaning method of using the same. The cleaning solution of the present invention comprises 2% by mass to 30% by mass of a fluorine compound, 0.0001% by mass to 20% by mass of a specific cationic surfactant that is an ammonium salt or an amine, and water, and has a pH value of 0 to 4.

Cleaning solution and cleaning method for material comprising carbon-incorporated silicon oxide for use in recycling wafer

It is an object of the present invention to provide a cleaning solution for removing carbon-incorporated silicon oxide (SiOC) from the surface of a wafer in a step of producing a wafer having a material comprising the SiOC, and a cleaning method of using the same. The cleaning solution of the present invention comprises 2% by mass to 30% by mass of a fluorine compound, 0.0001% by mass to 20% by mass of a specific cationic surfactant that is an ammonium salt or an amine, and water, and has a pH value of 0 to 4.

SURFACTANT COMPOSITION BASED ON GLYCINE BETAINE AMIDE SALTS, PROCESS FOR PREPARING SAME AND USES THEREOF

The present invention relates to a surfactant composition based on glycine betaine amide salt and also to the process for preparing the same. The invention also relates to the use thereof as a wetting agent, particle dispersant and/or corrosion inhibitor and/or for improving the disinfectant power and/or the persistence of the disinfectant effect of antimicrobial substances and/or the insecticide effect and/or the persistence of insecticidal substances, and also in the manufacture of various products intended for treating and/or cleansing the body, plants or hard surfaces, for water treatment or for oil extraction. The invention also relates to a product comprising the abovementioned composition.

Personal cleansing composition

Disclosed are water-based personal cleansing compositions having an isotropic surfactant phase, the compositions containing (a) an amidoamine surfactant, (b) cleansing surfactant, (c) water, and (d) protonating agent, the cleansing surfactant containing 85 to 100% by weight of a combination of betaine surfactant and taurate surfactant in particular ratios; also disclosed are methods of thickening such compositions by the addition of electrolyte.

Personal cleansing composition

Disclosed are water-based personal cleansing compositions having an isotropic surfactant phase, the compositions containing (a) an amidoamine surfactant, (b) cleansing surfactant, (c) water, and (d) protonating agent, the cleansing surfactant containing 85 to 100% by weight of a combination of betaine surfactant and taurate surfactant in particular ratios; also disclosed are methods of thickening such compositions by the addition of electrolyte.

ENZYMATIC POT AND PAN DETERGENT

Detergent compositions are disclosed which provide superior cleaning and removal of proteinaceous and starchy soils. Applicants have discovered a surfactant package which acts to enhance and improve the performance of enzymes such as proteases and/or amylases. Compositions for pot and pan warewash detergents and soaks are disclosed, as well as their use in manual or dish machine cleaning.

ENZYMATIC POT AND PAN DETERGENT

Detergent compositions are disclosed which provide superior cleaning and removal of proteinaceous and starchy soils. Applicants have discovered a surfactant package which acts to enhance and improve the performance of enzymes such as proteases and/or amylases. Compositions for pot and pan warewash detergents and soaks are disclosed, as well as their use in manual or dish machine cleaning.

Compositions for anti pattern collapse treatment comprising gemini additives

A method of reducing defects of a semiconductor substrate whereby the substrate is rinsed with an aqueous composition containing a gemini additive of the general formula I after the development of a photoresist or a photolithographic mask ##STR00001## wherein X is a divalent group, R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are substituted or unsubstituted monovalent groups, n is an integer from 1 to 5, or 1 to 10000 depending on R.sup.3 and R.sup.4, z is an integer, which is chosen so that the overall surfactant is electrically uncharged, and Z is a counter-ion.