The invention discloses synergistic combinations of surfactant blends and cleaning compositions employing the same. In certain embodiments a surfactant system is disclosed which includes an extended anionic surfactant with novel co-surfactants including one or more of an alkyl glycerol ether, an ethoxylated alkyl glycerol ether, an alcohol ethoxylate and/or a gemini surfactant. This system forms emulsions with, and can remove greasy and oily stains, even those comprised of non-trans fats. The compositions may be used alone, as a pre-spotter or other pre-treatment or as a part of a soft surface or hard surface cleaning composition.

A hand dishwashing cleaning composition including a surfactant system and an amine of Formula (I):

R1-NR2R3 (I) wherein R1 is a cyclic or acyclic polyhydroxyhydrocarbyl; R2 is hydrogen or methyl; and R3 is a C6 to C30 hydrocarbyl.

The present disclosure relates generally to fabric softener compositions and processes for treating fabric using the same. The fabric softener compositions described herein include a smectite clay; a non-polymeric amine component selected from the group consisting of primary amines, secondary amines and tertiary amines; a water-soluble metal halide or sulfate; and optionally, an oil selected from the group consisting of a mineral oil and a vegetable oil.

A family of amine mining collectors that uses alkoxylates allows for the easy adjustment of solubility and molecular weight useful because anionic and cationic mineral collectors require such varying degrees of solubility and molecular weight. The family of the present invention allows for the optimization of both parameters and an increase in collector efficiency.

Disclosed is a compound of the general formula (1) RXSO.sub.3HN+(R.sub.aR.sub.bR.sub.c) (1), wherein i) R is selected from the group of C.sub.6 to C.sub.20 alkyl groups; ii) X is selected from the group a) C.sub.6H.sub.4, b) (OC2H4)nO, in which n=2 to 8, c) C(O)N(CH.sub.3)CH.sub.2CH.sub.2, and d) R1O(O)CCH2(R1O(O)C)CH, in which R.sup.1C.sub.6 to C.sub.20 alkyl; iii) at least two of the groups R.sub.a, R.sub.b, and R.sub.c are selected independently of each other from the group consisting of C.sub.3 to C.sub.12 alkyl and C.sub.3 to C.sub.12 hydroxyalkyl groups. Also disclosed are detergents containing the compound, and washing and cleaning methods using the compound, and methods for producing same.

Described herein is a process for the production of a surfactant, as well as a surfactant composition. Also described herein are specific surfactants and compositions thereof, as well as methods of their use in a wide variety of applications such as all purpose cleaning agents.

Described herein is a process for the production of a surfactant, as well as a surfactant composition. Also described herein are specific surfactants and compositions thereof, as well as methods of their use in a wide variety of applications such as all purpose cleaning agents.

There is provided a method of cleaning semiconductor substrates that is excellent in cleaning performance with respect to semiconductor substrates having undergone a chemical mechanical polishing process and corrosion prevention performance with respect to metal films. This method includes a cleaning step of cleaning a semiconductor substrate having undergone the CMP using a cleaning liquid. The cleaning liquid shows alkaline properties and contains: a component A that is at least one selected from the group consisting of a primary amine, a secondary amine, and a tertiary amine, provided that a compound represented by a specific formula (a) is excluded; and a component B that is a compound represented by the specific formula (a). The mass ratio of the component B content to the component A content is not more than 0.01. The cleaning liquid applied to the semiconductor substrate has a temperature of not lower than 30 C.

There is provided a method of cleaning semiconductor substrates that is excellent in cleaning performance with respect to semiconductor substrates having undergone a chemical mechanical polishing process and corrosion prevention performance with respect to metal films. This method includes a cleaning step of cleaning a semiconductor substrate having undergone the CMP using a cleaning liquid. The cleaning liquid shows alkaline properties and contains: a component A that is at least one selected from the group consisting of a primary amine, a secondary amine, and a tertiary amine, provided that a compound represented by a specific formula (a) is excluded; and a component B that is a compound represented by the specific formula (a). The mass ratio of the component B content to the component A content is not more than 0.01. The cleaning liquid applied to the semiconductor substrate has a temperature of not lower than 30 C.

Liquid laundry detergent compositions formulated to manage chlorine in the rinse by way of sufficiently carrying-over chlorine scavengers on fabrics from the wash cycle to the rinse step are described. The presence of an effective level of scavenger in the rinse step provides a color care benefit to the fabrics.