A treatment liquid for cleaning a semiconductor wafer is a treatment liquid containing (A) a hypochlorite ion and (C) a solvent, in which pH at 25° C. is more than 7 and less than 12.0. A method for removing ruthenium and tungsten from a semiconductor wafer and cleaning the semiconductor wafer includes bringing the treatment liquid into contact with the semiconductor wafer containing ruthenium or tungsten is provided.

A treatment liquid for a semiconductor device includes an alkanolamine; a hydroxylamine; an organic solvent; Ca; Fe; and Na, wherein the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10.sup.−12 to 10.sup.−4.

Powder and cast solid alkaline cleaning compositions are disclosed. Powders and/or solidification of a highly alkaline detergent composition are provided including sodium hydroxide beads and/or liquid and sodium carbonate in combination with water conditioning polymers. Methods of cleaning for soil removal of baked on, greasy soils, including those found in ovens, are also disclosed.

A treatment liquid for cleaning a semiconductor wafer is a treatment liquid contains (A) a hypochlorite ion and (C) a solvent, in which pH at 25° C. is more than 7 and less than 12.0. A method for removing ruthenium and tungsten from a semiconductor wafer and cleaning the semiconductor wafer includes bringing the treatment liquid into contact with the semiconductor wafer containing ruthenium or tungsten is provided.

Compositions and methods useful for removing residue and photoresist from a semiconductor substrate comprising: from about 5 to about 60% by wt. of water; from about 10 to about 90% by wt. of a water-miscible organic solvent; from about 5 to about 90% by wt. of at least one alkanolamine; from about 0.05 to about 20% by wt. of at least one polyfunctional organic acid; and from about 0.1 to about 10% by wt. of at least one phenol-type corrosion inhibitor, wherein the composition is substantially free of hydroxylamine.

The present disclosure provides fluid barriers as well as systems and methods of forming fluid barriers. The method includes cleaning, via a blast media, a first side of a component and heating the component to a first temperature. Subsequently, the component is cleaned using a solvent. Subsequent to heating at least the component, a primer coating layer is formed on the first side of the component, and a topcoat layer is formed in contact with the primer coating layer. A primer coating material can be heated to a second temperature prior to formation of the primer coating layer. The first temperature can be different than the second temperature.

Disclosed is a method of forming a fine silicon pattern with a high aspect ratio for fabrication of a semiconductor device. The method includes a cleaning process of removing organic residue or reside originating in fumes using a cleaning solution, thereby enabling formation of a desired pattern while preventing the pattern from being lifted. Thus, the present disclosure enables formation of a fine pattern by using a novel cleaning method.

A method and composition for removing contaminant material from industrial equipment are disclosed herein. The method includes providing a solvent composition having methyl soyate, N-methylpyrrolidinone, an additional solvent, and a cationic surfactant. The method also includes contacting the contaminant material with the solvent composition and allowing the solvent composition to react with the contaminant material such that at least a portion of the contaminant material is no longer attached to the industrial equipment.

A roll of cleaning fabric is used for cleaning printing cylinders of a printing system. The cleaning fabric (13) is impregnated with a cleaning composition containing an organic solvent and a cellulose solubilizer. The roll may be wound around a core (14) and inserted in a removable sealing bag (15) configured to seal around the roll (12) of cleaning fabric (13) in order to prevent the cleaning composition from evaporating before use.

A method and composition for removing contaminant material from industrial equipment are disclosed herein. The method includes providing a solvent composition having methyl soyate, N-methylpyrrolidinone, an additional solvent, and a cationic surfactant. The method also includes contacting the contaminant material with the solvent composition and allowing the solvent composition to react with the contaminant material such that at least a portion of the contaminant material is no longer attached to the industrial equipment.