The present disclosure provides an ion implantation method and an ion implanter for realizing the ion implantation method. The above-mentioned ion implantation method comprises: providing a spot-shaped ion beam current implanted into the wafer; controlling the wafer to move back and forth in a first direction; controlling the spot-shaped ion beam current to scan back and forth in a second direction perpendicular to the first direction; and adjusting the scanning width of the spot-shaped ion beam current in the second direction according to the width of the portion of the wafer currently scanned by the spot-shaped ion beam current in the second direction. According to the ion implantation method provided by the present disclosure, the scanning path of the ion beam current is adjusted by changing the scanning width of the ion beam current, so that the beam scanning area is attached to the wafer, which greatly reduces the waste of the ion beam current, improves the effective ion beam current and increases productivity without increasing actual ion beam current.

The present disclosure provides an ion implantation method and an ion implanter for realizing the ion implantation method. The above-mentioned ion implantation method comprises: providing a spot-shaped ion beam current implanted into the wafer; controlling the wafer to move back and forth in a first direction; controlling the spot-shaped ion beam current to scan back and forth in a second direction perpendicular to the first direction; and adjusting the scanning width of the spot-shaped ion beam current in the second direction according to the width of the portion of the wafer currently scanned by the spot-shaped ion beam current in the second direction. According to the ion implantation method provided by the present disclosure, the scanning path of the ion beam current is adjusted by changing the scanning width of the ion beam current, so that the beam scanning area is attached to the wafer, which greatly reduces the waste of the ion beam current, improves the effective ion beam current and increases productivity without increasing actual ion beam current.

Disclosed according to various embodiments of the present invention are a method and a device for preforming device-to-device (D2D) relay communication. Disclosed are a method and a device for performing device-to-device (D2D) relay communication, the method comprising the steps of: receiving, from second UE, a signal including relay request information; transmitting a response signal to the second UE if destination UE corresponding to destination UE ID included in the relay request information has been found; and transmitting a relay signal to the destination UE.

Disclosed according to various embodiments of the present invention are a method and a device for preforming device-to-device (D2D) relay communication. Disclosed are a method and a device for performing device-to-device (D2D) relay communication, the method comprising the steps of: receiving, from second UE, a signal including relay request information; transmitting a response signal to the second UE if destination UE corresponding to destination UE ID included in the relay request information has been found; and transmitting a relay signal to the destination UE.

The present disclosure provides an ion implantation method and an ion implanter for realizing the ion implantation method. The above-mentioned ion implantation method comprises: providing a spot-shaped ion beam current implanted into the wafer; controlling the wafer to move back and forth in a first direction; controlling the spot-shaped ion beam current to scan back and forth in a second direction perpendicular to the first direction; and adjusting the scanning width of the spot-shaped ion beam current in the second direction according to the width of the portion of the wafer currently scanned by the spot-shaped ion beam current in the second direction. According to the ion implantation method provided by the present disclosure, the scanning path of the ion beam current is adjusted by changing the scanning width of the ion beam current, so that the beam scanning area is attached to the wafer, which greatly reduces the waste of the ion beam current, improves the effective ion beam current and increases productivity without increasing actual ion beam current.

Disclosed according to various embodiments of the present invention are a method and a device for preforming device-to-device (D2D) relay communication. Disclosed are a method and a device for performing device-to-device (D2D) relay communication, the method comprising the steps of: receiving, from second UE, a signal including relay request information; transmitting a response signal to the second UE if destination UE corresponding to destination UE ID included in the relay request information has been found; and transmitting a relay signal to the destination UE.