The present disclosure describes a device (10) to receive a bag containing a biological product (20), the device acting as a scale-down of a freezing and/or thawing process by preserving the characteristic dimension between scales. The device can be used in the same equipment of the commercial manufacturing scale. The device comprises rims (102) to deform the bag, creating two deformed surfaces (201). The distance between those two deformed surfaces should be the same as the distance between two heat transfer surfaces of a larger bag, this distance being the characteristic dimension of the bag. The device further comprises walls (101) to compress the bag, wherein the walls of the device may act as a tank filled with a solution with similar osmolality of the biological product, or with a phase-change material, to reduce the heat transfer on the walls and promote the main heat transfer through the deformed surfaces of the bag.

Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

A light emitting element ink and a method of manufacturing a display device are provided. The light emitting element ink includes a light emitting element solvent, a light emitting element dispersed in the light emitting element solvent, the light emitting element including a plurality of semiconductor layers and an insulating film surrounding outer surfaces of the semiconductor layers, a thickener dispersed in the light emitting element solvent, wherein a compound of the thickener includes a functional group capable of forming a hydrogen bond together with a compound of the light emitting element solvent or another compound of the thickener and the compound of the thickener is represented by Chemical Formula 1.

An embodiment of the disclosure provides an electronic device including multiple units. Each unit in the units includes multiple primary bonding regions and at least one reserved bonding region. Each reserved bonding region is connected to the primary bonding regions. The number of the at least one reserved bonding region is less than the number of primary bonding regions.

A display device and a method of manufacturing a display device are provided. A method of manufacturing a display device may include: forming a sacrificial layer on a carrier glass; forming a first substrate layer on the sacrificial layer, the first substrate layer including an organic insulation material; forming a first through-hole in the first substrate layer, the first through-hole passing through the first substrate layer; forming a wiring on an upper surface of the first substrate layer, the wiring extending into the first through-hole; sequentially forming a circuit layer, an emission layer, and an encapsulation layer on the wiring; separating the sacrificial layer and the carrier glass from the first substrate layer by irradiating the sacrificial layer with a laser; and attaching a driving element on a lower surface of the first substrate layer, the driving element being electrically connected to the wiring through the first through-hole.

Structures and methods are disclosed for fabricating optoelectronic solid state array devices. In one case a backplane and array of micro devices is aligned and connected through bumps.

A polychrome wafer structure (100,200,200) comprising a plurality of structured first epitaxial dies (102) having first light-emitting devices (107) configured to emit light of a first color, at least a plurality f structured second epitaxial dies (103) having second light-emitting devices (107) configured to emit light of a second color. The plurality of the structured first epitaxial dies (102) and the plurality of the structured second epitaxial dies (103) are bonded on a target wafer (507) with a plurality of common monolithic integrated circuits in a manner that the at least one first die and the at least one second die is connected to common monolithic integrated (101) one circuit for simultaneously driving at least one first epitxial die (102) having light-emitting device (107) and at least one second epitaxial die (103) having light-emitting device (107) by the respective one common monolithic integrated circuit (101).

A transfer substrate for a light emitting diode is provided. The transfer substrate includes a substrate, a laser ablation layer provided to the substrate, and an adhesive layer provided on the laser ablation layer and attached with a plurality of light emitting diodes, and the laser ablation layer and the adhesive layer may be divided into a plurality of portions corresponding to the plurality of light emitting diodes.

A method of manufacturing a light emitting device is provided, the method at least includes the following steps: a substrate is provided, a light emitting unit is bonded on the substrate, an insulating layer is formed on the substrate so that at least a part of the light emitting unit is enclosed by the insulating layer, and a collimator corresponding to the light emitting unit is formed on the substrate after the insulating layer is formed.

A method for manufacturing a light-emitting device includes providing a layered body including a wavelength conversion layer, a light-transmissive layer disposed above the wavelength conversion layer, and a semiconductor layer disposed above the light-transmissive layer, separating the semiconductor layer into a plurality of semiconductor portions above the wavelength conversion layer by removing a part of the semiconductor layer; and singulating the layered body into a plurality of light-emitting devices by cleaving the wavelength conversion layer along a portion where the part of the semiconductor layer is removed.