Patent classifications
B01J2219/00148
Electromagnetic reactor
An apparatus for exposing a bulk volume of particles, such as free-flowing or semi-flowable grains, ore, or powders, or a non-flowing mass such as sewage or wet-chopped bio-mass so all of the particles receive near-uniform exposure to a radio frequency (RF) electric and/or magnet (EM) field, preferably without any preference of exposure to a surface or side of particulate. The invention relates to an antenna that can be metallic or plasma for transmitting RF EM radiation into a mechanical mechanism used to convey, or preferably to mix a bulk volume of particles. Embodiments of the apparatus include the ability to adjust the level of EM radiation comprised of one or more frequencies between 30 Hz and 30 EHz to regulate either or both the magnitude of temperature rise and the rate of temperature rise, or to regulate either or both the magnitude of chemical reaction, or rate of reaction.
Electromagnetic Reactor
An apparatus for exposing a bulk volume of particles, such as free-flowing or semi-flowable grains, ore, or powders, or a non-flowing mass such as sewage or wet-chopped bio-mass so all of the particles receive near-uniform exposure to a radio frequency (RF) electric and/or magnet (EM) field, preferably without any preference of exposure to a surface or side of particulate. The invention relates to an antenna that can be metallic or plasma for transmitting RF EM radiation into a mechanical mechanism used to convey, or preferably to mix a bulk volume of particles. Embodiments of the apparatus include the ability to adjust the level of EM radiation comprised of one or more frequencies between 30 Hz and 30 EHz to regulate either or both the magnitude of temperature rise and the rate of temperature rise, or to regulate either or both the magnitude of chemical reaction, or rate of reaction.
REACTOR AND METHOD FOR PRODUCTION OF SILICON
Reactor for production of silicon, comprising a reactor volume, distinctive in that the reactor comprises or is operatively arranged to at least one means for setting a silicon-containing reaction gas for chemical vapor deposition (CVD) into rotation inside the reactor volume. Method for production of silicon.
B2F4 MANUFACTURING PROCESS
A reaction system and method for preparing compounds or intermediates from solid reactant materials is provided. In a specific aspect, a reaction system and methods are provided for preparation of boron-containing precursor compounds useful as precursors for ion implantation of boron in substrates. In another specific aspect, a reactor system and methods are provided for manufacture of boron precursors such as B.sub.2F.sub.4.
B2F4 manufacturing process
A reaction system and method for preparing compounds or intermediates from solid reactant materials is provided. In a specific aspect, a reaction system and methods are provided for preparation of boron-containing precursor compounds useful as precursors for ion implantation of boron in substrates. In another specific aspect, a reactor system and methods are provided for manufacture of boron precursors such as B.sub.2F.sub.4.
Chemical synthesis comprising heat treatment by intermittent dielectric heating combined with a recycling system
This invention relates to the design of a process by intermittent dielectric heating combined with a recycling system. This process consists in subjecting reagents to electromagnetic waves selected in the frequencies ranging between 300 GHz and 3 MHz intermittently using a recycling system. This process enables the treatment of oils that are hardly absorbent as well as great investment savings. This process enables operation on different scales, whether in laboratories, on a semi-industrial or industrial scale, without forfeiting the advantages of continuous dielectric heating.
Apparatus for producing aligned carbon nanotube aggregates
An apparatus of the present invention for producing aligned carbon nanotube aggregates is an apparatus for producing aligned carbon nanotube aggregates, the apparatus being configured to grow the aligned carbon nanotube aggregate by: causing a catalyst formed on a surface of a substrate to be surrounded by a reducing gas environment constituted by a reducing gas; heating at least either the catalyst or the reducing gas; causing the catalyst to be surrounded by a raw material gas environment constituted by a raw material gas; and heating at least either the catalyst or the raw material gas, at least either an apparatus component exposed to the reducing gas or an apparatus component exposed to the raw material gas being made from a heat-resistant alloy, and having a surface plated with molten aluminum.
WASTE GAS TREATMENT EQUIPMENT USING HIGH FREQUENCY HEAT SOURCE
A waste gas treatment equipment includes a reactor defining a waste gas reaction space, an induction heating pipe disposed in and dividing the waste gas reaction space into inner and outer spaces, a coil protector disposed in the outer space and surrounding the induction heating pipe, a flow guide tube inserted into the inner space through a bottom wall of the reactor, and a high frequency coil disposed in the coil protector. A catalyst barrel has a barrel body sleeved on a top portion of the flow guide tube, including an outer wall provided with a plurality of through holes, and defining a receiving space communicating with the through holes and for receiving a catalyst. A scraper mechanism is provided in the reactor for scraping dust or crystals attached to the inner wall surface of the flow guide tube and the outer wall of the barrel body.