A method of manufacturing a microarray substrate having improved reliability and mass-production properties uses a vapor of a surface-reforming material, and includes washing a base substrate, supplying the vapor of the surface-reforming material into a container to which the base substrate is provided, and coupling the vapor of the surface-reforming material to a surface of the base substrate to form a self-assembled monolayer.

A high-throughput combinatorial materials experimental apparatus for in-situ synthesis and real-time characterization includes a composition spread device to prepare continuous or discrete composition distribution as precursor of the high-throughput experimental samples library, a low temperature diffusion mixing device to thoroughly mix the composition spread in the thickness direction through diffusion at a relatively low temperature to form an amorphous precursor, and an integrated synthesis-characterization unit for heat treatment of the material library precursor in either a parallel or point-by-point scanning mode at different thermodynamic conditions for phase formation and to characterize features or properties of the materials of interest in an in-situ and real-time manner. The integrated synthesis-characterization unit includes a chamber maintained at desired vacuum and atmosphere, a micro-heating source, an excitation source, a signal collector, and a sample holder.

Provided are methods for performing patterned chemistry and arrays prepared thereby.

The present disclosure provides methods, device, and system for wafer processing. The wafer processing apparatus uses lid dispenser to disperse at least one reagent to the surface of the wafer. Further, the wafer is positioned on top of a rotatable vacuum chuck configured to spread at least one reagent over the surface of the wafer via a centrifugal force or surface tension, thereby permitting the at least one reagent to react with an additional reagent. Further, when dispensing the at least one reagent, a separation gap between the lid dispenser and the wafer is at a predetermined distance, for example, from 50 m to 2 mm.

Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

A microdeposition pin having a contact surface with at least one concave edge for creating microarrays and the like. The microdeposition pin may be used either alone or with a plurality of microdeposition pins in conjunction with a holder. The concave edge of the pin is especially adapted for helping to control the spreading of a deposited material. By selectively controlling the spread of the reagent composition from the microdeposition pin, the flow of the reagent composition from the deposition target area may be reduced. Sensor strips having raised substrate features with limited or no spreading of the reagent composition beyond the target area are disclosed.

A high-throughput combinatorial materials experimental apparatus for in-situ synthesis and real-time characterization includes a composition spread device to prepare continuous or discrete composition distribution as precursor of the high-throughput experimental samples library, a low temperature diffusion mixing device to thoroughly mix the composition spread in the thickness direction through diffusion at a relatively low temperature to form an amorphous precursor, and an integrated synthesis-characterization unit for heat treatment of the material library precursor in either a parallel or point-by-point scanning mode at different thermodynamic conditions for phase formation and to characterize features or properties of the materials of interest in an in-situ and real-time manner. The integrated synthesis-characterization unit includes a chamber maintained at desired vacuum and atmosphere, a micro-heating source, an excitation source, a signal collector, and a sample holder.

Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

The present disclosure provides methods, device, and system for wafer processing. The wafer processing apparatus uses lid dispenser to disperse at least one reagent to the surface of the wafer. Further, the wafer is positioned on top of a rotatable vacuum chuck configured to spread at least one reagent over the surface of the wafer via a centrifugal force or surface tension, thereby permitting the at least one reagent to react with an additional reagent. Further, when dispensing the at least one reagent, a separation gap between the lid dispenser and the wafer is at a predetermined distance, for example, from 50 m to 2 mm.