A method of fabricating a semiconductor device includes plasma etching a portion of a plurality of metal dichalcogenide films comprising a compound of a metal and a chalcogen disposed on a substrate by applying a plasma to the plurality of metal dichalcogenide films. After plasma etching, a chalcogen is applied to remaining portions of the plurality of metal dichalcogenide films to repair damage to the remaining portions of the plurality of metal dichalcogenide films from the plasma etching. The chalcogen is S, Se, or Te.

Disclosed are a catalyst and a preparation method therefor, the catalyst being able to maintain a high production yield of C8 aromatic hydrocarbons in the process of converting a feedstock containing alkyl aromatics to C8 aromatic hydrocarbons such as mixed xylene through disproportionation/transalkylation/dealkylation while reducing a content of ethylbenzene in the products.

Disclosed are a catalyst and a preparation method therefor, the catalyst being able to maintain a high production yield of C8 aromatic hydrocarbons in the process of converting a feedstock containing alkyl aromatics to C8 aromatic hydrocarbons such as mixed xylene through disproportionation/transalkylation/dealkylation while reducing a content of ethylbenzene in the products.

The invention relates to the use of a supported, platinum-containing and sulfur-containing shell catalyst for the partial or complete dehydrogenation of perhydrogenated or partially hydrogenated cyclic hydrocarbons. The present invention also relates to a method for producing a platinum-containing and sulfur-containing shell catalyst and to a platinum-containing and sulfur-containing shell catalyst. The present invention further relates to a method for the partial or complete dehydrogenation of perhydrogenated or partially hydrogenated cyclic hydrocarbons.

The invention relates to the use of a supported, platinum-containing and sulfur-containing shell catalyst for the partial or complete dehydrogenation of perhydrogenated or partially hydrogenated cyclic hydrocarbons. The present invention also relates to a method for producing a platinum-containing and sulfur-containing shell catalyst and to a platinum-containing and sulfur-containing shell catalyst. The present invention further relates to a method for the partial or complete dehydrogenation of perhydrogenated or partially hydrogenated cyclic hydrocarbons.

Disclosed is a catalyst for oxygen reduction and evolution reactions. The catalyst is in the form of nickel sulfide (NiS.sub.2) nanosheets. NiS.sub.2 molecules are cross-linked and oriented two-dimensionally in the NiS.sub.2 nanosheets. Also disclosed is a method for producing the catalyst.

Disclosed is a catalyst for oxygen reduction and evolution reactions. The catalyst is in the form of nickel sulfide (NiS.sub.2) nanosheets. NiS.sub.2 molecules are cross-linked and oriented two-dimensionally in the NiS.sub.2 nanosheets. Also disclosed is a method for producing the catalyst.

A process is presented for the management of sulfur on a catalyst. The catalyst is a dehydrogenation catalyst, and sulfur accumulates during the dehydrogenation process. Sulfur compounds are stripped from the spent catalyst and the catalyst is cooled before the regeneration process. The process includes controlling the amount of sulfur that needs to be removed from the catalyst before regeneration.

A process is presented for the management of sulfur on a catalyst. The catalyst is a dehydrogenation catalyst, and sulfur accumulates during the dehydrogenation process. Sulfur compounds are stripped from the spent catalyst and the catalyst is cooled before the regeneration process. The process includes controlling the amount of sulfur that needs to be removed from the catalyst before regeneration.

A method of fabricating a semiconductor device includes plasma etching a portion of a plurality of metal dichalcogenide films comprising a compound of a metal and a chalcogen disposed on a substrate by applying a plasma to the plurality of metal dichalcogenide films. After plasma etching, a chalcogen is applied to remaining portions of the plurality of metal dichalcogenide films to repair damage to the remaining portions of the plurality of metal dichalcogenide films from the plasma etching. The chalcogen is S, Se, or Te.