A feedstock gas, such as natural gas, is introduced into a mixing chamber. A combustible gas is introduced into a combustion chamber, for example simultaneously to the introduction of the feedstock gas. Thereafter, the combustible gas is ignited so as to cause the combustible gas to flow into the mixing chamber via one or more fluid flow paths between the combustion chamber and the mixing chamber, and to mix with the feedstock gas. The mixing of the combustible gas with the feedstock gas causes one or more products to be produced.

Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.

A distributor element comprising: at least three plates, each plate comprising openings, each of the levels between adjacent plates having walls extending from one side of one plate onto an adjacent side of an adjacent plate to define a channel, the channels fluid-tightly connecting all of the openings between adjacent plates, in each of the levels between the walls, one or more hollow spaces being formed, each of the plates comprising at least one aperture not being fluid-tightly connected with the openings of an adjacent plate by a channel, in each level between the at least one aperture of the adjacent plate at least two fluid paths extend in the one or more hollow spaces, all of the at least two fluid paths of each level having a substantially same length, and a number of fluid paths increasing at least for 75% of the plates from level to level.

The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.

A reactor for accommodating high contaminant feedstocks includes a reactor vessel having an inlet for introducing a feedstock containing contaminants into an interior of the reactor vessel. A basket is located within the reactor vessel interior and contains a particulate material for removing contaminants from the feedstock to form a purified feedstock that is discharged to a purified feedstock outlet. A catalyst is located within the reactor vessel and in fluid communication with the purified feedstock outlet of the basket for contacting the purified feedstock to form a desired product.

The invention is directed to a chemical reactor (100) having (a) two or more gas reactor elements (12) with each gas reactor element (12) having (i) a first reaction chamber (38), and (ii) a feed assembly unit (36), (b) a second reaction chamber (20) coupled with each of the two or more gas reactor elements (12) and configured to independently receive two or more product streams from the two or more gas reactor elements (12); and optionally, (c) a gas converging section (40) located downstream to the second reaction chamber (20). The invention is further directed to a method of producing chemical products using the chemical reactor (100) of the present invention.

The present invention relates to a reaction method for forming a layered structure of immiscible liquid-phase concentric layers within a rotary reactor and a reaction system including the layered structure, and may provide a basis capable of efficiently performing a multistage reaction in terms of time and space.

A feedstock gas, such as natural gas, is introduced into a mixing chamber. A combustible gas is introduced into a combustion chamber, for example simultaneously to the introduction of the feedstock gas. Thereafter, the combustible gas is ignited so as to cause the combustible gas to flow into the mixing chamber via one or more fluid flow paths between the combustion chamber and the mixing chamber, and to mix with the feedstock gas. The mixing of the combustible gas with the feedstock gas causes one or more products to be produced.

The invention is directed to a chemical reactor (100) having (a) two or more gas reactor elements (12) with each gas reactor element (12) having (i) a first reaction chamber (38), and (ii) a feed assembly unit (36), (b) a second reaction chamber (20) coupled with each of the two or more gas reactor elements (12) and configured to independently receive two or more product streams from the two or more gas reactor elements (12); and optionally, (c) a gas converging section (40) located downstream to the second reaction chamber (20). The invention is further directed to a method of producing chemical products using the chemical reactor (100) of the present invention.

The invention concerns a reactor for chemical vapour deposition from first and second precursor gases, the reactor comprising: —a chamber including top and bottom walls and a side wall linking the top and bottom walls, —a support intended for receiving at least one substrate, mounted inside the chamber, and —at least one system for injecting precursor gases, the system comprising an injection head including at least one nozzle for supplying the first precursor gas (41) in a main direction of axis A-A′, the at least one nozzle including: a precursor gas supply conduit (321), and an outlet member (322) generating a substantially annular 43 vortex flow (44) around axis A-A′.