A semiconductor phosphide injection synthesis system and a control method are provided, which belong to the technical field of preparation of semiconductor phosphides. The semiconductor phosphide injection synthesis system includes a furnace body, a shielding carrier box arranged above the furnace body by virtue of a lifting mechanism, a phosphorus source carrier arranged in the shielding carrier box, an injection pipe arranged below the phosphorus source carrier, and a crucible arranged at an inner bottom of the furnace body in a matched manner. The phosphorus source carrier includes a phosphorus source carrier main body, a phosphorus source carrier upper cover, a heating element base arranged at an inner bottom of the phosphorus source carrier main body, and a heating element arranged on the heating element base; a heat insulation layer is wrapped on an outer wall of the phosphorus source carrier; and an induction coil is arranged between the heat insulation layer and an inner wall of the shielding carrier box. By improving a device and method, the system stability can be improved, and an entire synthesis system achieves quantitative synthesis, which lowers the risk of explosion of the phosphorus source carrier.

Provided is a silicon refining device that is used when industrially producing silicon of high purity by vacuum melting, has a high P removal rate and thus high productivity, and is a practical device cost-wise with a simple and cheap device configuration. This silicon refining device comprises, in a decompression vessel provided with a vacuum pump, a crucible that contains a metal silicon material, a heating device that heats the crucible, and a molten metal surface thermal insulation member that covers the upper portion of silicon molten metal and has an exhaust opening with an opening area that is smaller than the silicon molten metal surface area. The molten metal surface thermal insulation member comprises a laminated insulation material with a multilayer structure in which three or more laminates are laminated at predetermined intervals from each other, and which exhibits a radiant heat insulating function based on the multilayer structure.

A process and an apparatus for silicon carbide production includes steps of producing a mixture having at least a carbon powder and a silica powder where the percentage by weight of carbon powder with respect to the total weight of the mixture, is at least about 25%; placing the mixture in a crucible; creating a substantially inert atmosphere in an area at least partially surrounding the crucible; heating up the crucible by a heating device for a first time interval until reaching a working temperature of at least 1.500 C. and lower than a melting temperature of the silica powder in the mixture; maintaining the crucible within a working temperature range between 1.500 C. and the melting temperature of the silica powder in the mixture for a second time interval; and reducing the temperature of the crucible after the second time interval.

A semiconductor phosphide injection synthesis system and a control method are provided, which belong to the technical field of preparation of semiconductor phosphides. The semiconductor phosphide injection synthesis system includes a furnace body, a shielding carrier box arranged above the furnace body by virtue of a lifting mechanism, a phosphorus source carrier arranged in the shielding carrier box, an injection pipe arranged below the phosphorus source carrier, and a crucible arranged at an inner bottom of the furnace body in a matched manner. The phosphorus source carrier includes a phosphorus source carrier main body, a phosphorus source carrier upper cover, a heating element base arranged at an inner bottom of the phosphorus source carrier main body, and a heating element arranged on the heating element base; a heat insulation layer is wrapped on an outer wall of the phosphorus source carrier; and an induction coil is arranged between the heat insulation layer and an inner wall of the shielding carrier box. By improving a device and method, the system stability can be improved, and an entire synthesis system achieves quantitative synthesis, which lowers the risk of explosion of the phosphorus source carrier.

A process and reactor for removing impurities from a carbon material, involving providing a carbon feed into the electrothermal reactor; providing a gas into the reactor; passing the carbon feed through the reactor in a direction; heating the carbon feed using one or more electrodes; volatizing non-carbon material of the feed with the heat; and discharging the purified carbon material at the second location. So purified, the carbon material may be battery-grade. The feed may be passed through the reactor in a generally horizontal direction. The velocity of the feed in the reactor may be controlled to achieve a select resident time sufficient to volatize a desired amount of impurity. The process and reactor may be configured to inhibit back-mixing of the feed.