B05C11/06

Anisotropy reduction in coating of conductive films

Provided herein is a device for forming a conductive film. The device includes a deposition device and an air supply. The deposition device is configured to form a wet film having conductive nanostructures and a fluid carrier on a web. The web is moved in a first direction while forming the wet film. The air supply is disposed at a side of the web and configured to apply an air flow onto the wet film. The air flow is directed onto the wet film in a second direction perpendicular to the first direction to reorient a direction of some conductive nanostructures in the wet film to define reoriented conductive nanostructures.

Anisotropy reduction in coating of conductive films

Provided herein is a device for forming a conductive film. The device includes a deposition device and an air supply. The deposition device is configured to form a wet film having conductive nanostructures and a fluid carrier on a web. The web is moved in a first direction while forming the wet film. The air supply is disposed at a side of the web and configured to apply an air flow onto the wet film. The air flow is directed onto the wet film in a second direction perpendicular to the first direction to reorient a direction of some conductive nanostructures in the wet film to define reoriented conductive nanostructures.

DEVICE AND METHOD FOR MANUFACTURING A COATED METAL STRIP WITH IMPROVED APPEARANCE
20220396861 · 2022-12-15 ·

The present invention relates to a gas wiping device for controlling the thickness of a coating layer deposited on a running metal strip plated with molten metal (1) in an industrial hot-dip installation, comprising a main nozzle unit (5) and a secondary nozzle unit (5A), to blow a wiping jet on the surface of the running strip, said main nozzle unit (5) and secondary nozzle unit (5A) being respectively provided with a main and secondary chamber (6, 6A) fed by pressurized non-oxidizing gas and with at least a main and N secondary elongated nozzle slot (7, 7A) formed in the tip of the respective main and secondary nozzle units (5, 5A), said tips comprising each an external top side (13, 13A), facing in use the downstream side of the running strip (1), and making an angle with the running strip surface, wherein the secondary nozzle unit (5A) is adjacent the main nozzle unit (5) over the external top side (13) of the main nozzle unit tip, so that the upper external surface (13A) of the secondary nozzle unit (5A) is designed to form, in use, an angle with the running strip surface comprised between 5° and 45°, wherein the thickness of the second slot opening (7A) is comprised between 1.5 and 3 times the thickness of the first slot opening (7), characterized in that the tip of the secondary nozzle unit has an external top side prolonged downstream by a first baffle plate making a first angle in use with respect to the running strip, so as to form a gas confinement region.

Substrate processing method and substrate processing device

In a second liquid supply step, a second liquid film and a first liquid film surrounding a side of the second liquid film are formed on an upper surface of a substrate. Then, in a vapor layer formation step, by heating the substrate, a second vapor layer is formed by evaporating the second liquid contacting the upper surface of the substrate, and the second liquid film is held on the second vapor layer. Since the second liquid included in the second liquid film has a high vapor pressure, a height position of a lower surface of the floating second liquid film may be kept high. By blowing a gas to the floating second liquid film, a hole is formed in the second liquid film, and by expanding the hole toward an outer periphery of the substrate, the first liquid and the second liquid are removed outside the substrate.

Substrate processing method and substrate processing device

In a second liquid supply step, a second liquid film and a first liquid film surrounding a side of the second liquid film are formed on an upper surface of a substrate. Then, in a vapor layer formation step, by heating the substrate, a second vapor layer is formed by evaporating the second liquid contacting the upper surface of the substrate, and the second liquid film is held on the second vapor layer. Since the second liquid included in the second liquid film has a high vapor pressure, a height position of a lower surface of the floating second liquid film may be kept high. By blowing a gas to the floating second liquid film, a hole is formed in the second liquid film, and by expanding the hole toward an outer periphery of the substrate, the first liquid and the second liquid are removed outside the substrate.

Systems, methods, and articles for polymer deposition

Systems having one or more features that are advantageous for depositing fluorinated polymeric coatings on substrates, and methods of employing such systems to deposit such coatings, are generally provided.

Systems, methods, and articles for polymer deposition

Systems having one or more features that are advantageous for depositing fluorinated polymeric coatings on substrates, and methods of employing such systems to deposit such coatings, are generally provided.

Semiconductor Device and Method of Coating a Semiconductor Wafer with High Viscosity Liquid Photoresist Using N2 Purge

A semiconductor manufacturing device has an outer cup and inner cup with a wafer suction mount disposed within the outer cup. A photoresist material is applied to a first surface of a semiconductor wafer disposed on the wafer suction mount while rotating at a first speed. A gas port is disposed on the inner cup for dispensing a gas oriented toward a bottom side of the semiconductor wafer. The gas port purges a second surface of the semiconductor wafer with a gas to remove contamination. The second surface of the semiconductor wafer is rinsed while purging with the gas. The gas can be a stable or inert gas, such as nitrogen. The contamination is removed from the second surface of the semiconductor wafer through an outlet between the inner cup and outer cup. The semiconductor wafer rotates at a second greater speed after discontinuing purge with the gas.

Coating apparatus
11491506 · 2022-11-08 · ·

A transfer and coating apparatus transfers a component from a conveyor to a coating station for application of a coating. The transfer apparatus includes a mast that can move about orthogonal axes in a horizontal plane and a mast having a carriage that can move vertically. The carriage includes a hook that swings about a horizontal axis relative to the mast for movement of the component in the horizontal direction. A sway bar extends between the hook and component to inhibit movement about a horizontal axis. The component is delivered to an upper compartment of a coating apparatus where it can be lowered in to a lower compartment containing coating material. Excess coating material is removed by an array of nozzles in the upper compartment as the component is raised from the coating material.

Wire-less variable gap coater device
11478814 · 2022-10-25 · ·

Systems and methods for coating a thin film with a viscous material, such as a liquid, a paste, or an adhesive, at a desired thickness. In such a system, two films move adjacent to one another, optionally in opposite directions, atop two rollers separated by a known gap that defines a coating thickness, with the material being transferred from one film to the other. The rollers may be maintained in their relative positions by springs and/or linear actuators and positioned using linear encoders. In alternative arrangements, the material to be coated could be low viscosity material such as a polymeric solution. Air knives may be provided near the gap to create an air flow that aids in preventing the free flow of low viscosity materials outside the bounds of the film during coating.