A cleaning apparatus for cleaning a substrate includes a lamp for emitting ultraviolet radiation in an irradiation region; a housing that houses the lamp; a water deflector spaced below the housing, the water deflector having a water inlet for receiving a supply of ozonated water and a water outlet for discharging ozonated water irradiated by the lamp into a substrate processing region beneath the water deflector, and defining a water flow path between the water inlet and the water outlet, the water flow path extending in the irradiation region; an upper reflector extending along and above the lamp; and a lower reflector extending along and below the water deflector, wherein the upper reflector and the lower reflector at least partially define the irradiation region and reflect ultraviolet radiation toward the water flow path, and wherein the lower reflector shields the substrate from ultraviolet radiation emitted by the lamp.

Embodiments of the present disclosure relate generally to systems and methods for combing ozone and water to deliver ozonated water in a rinse stream. The ozone rain pan finds particular use for rinsing food products traveling along a conveyor line with ozonated water.

A method for cleaning a substrate is provided. The method includes following operations. A substrate is received. The substrate has a plurality of conductive nanoparticles disposed over a surface of the substrate. A first mixture is applied to remove the conductive nanoparticles. The first mixture includes an SCl solution, DI water and O.sub.3. A second mixture is applied to the photomask substrate. The second mixture includes DI wafer and H.sub.2. A temperature of the second mixture is between approximately 20° C. and 40° C. The applying of the second mixture further includes a mega sonic agitation, and a frequency of the mega sonic agitation is greater than 3 MHz. A flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min. A flow rate of the second mixture is between 1000 ml/min and approximately 3000 ml/min.

An apparatus for fabricating a semiconductor device may include a nozzle having a slit configured to eject solution and an ultraviolet emitter provided outside the nozzle. The ultraviolet emitter and the nozzle may be configured to move horizontally. The slit may be provided on a bottom surface of the nozzle.

A method for cleaning a substrate is provided. The method includes following operations. A substrate is received. The substrate has a plurality of conductive nanoparticles disposed over a surface of the substrate. A first mixture is applied to remove the conductive nanoparticles. The first mixture includes an SC1 solution, DI water and O.sub.3. A second mixture is applied to the photomask substrate. The second mixture includes DI wafer and H.sub.2. A temperature of the second mixture is between approximately 20° C. and 40° C. The applying of the second mixture further includes a mega sonic agitation, and a frequency of the mega sonic agitation is greater than 3 MHz. A flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min. A flow rate of the second mixture is between 1000 ml/min and approximately 3000 ml/min.

An apparatus for fabricating a semiconductor device may include a nozzle having a slit configured to eject solution and an ultraviolet emitter provided outside the nozzle. The ultraviolet emitter and the nozzle may be configured to move horizontally. The slit may be provided on a bottom surface of the nozzle.

A method for cleaning piping including the steps of supplying an acid to a cleaning water to prepare a cleaning water having pH of 4 or lower, mixing ozone gas to the cleaning water, and passing the cleaning water through the piping to be cleaned, or a cleaning system for piping, the system including a reservoir which retains cleaning water, an acid providing means supplies an acid to the cleaning water, an ozone generation means which generates ozone gas, a circulation flow path including a circulation pump which connects the reservoir and the ozone generation means in the form of a closed circuit, and circulates the cleaning water between the reservoir and ozone generation means, a conduction flow path including a conveying pump which communicates the reservoir and the piping to be cleaned, and conveys the cleaning water retained in the reservoir through the piping to be cleaned.

A system and method for cleaning, protecting and lubricating hyperbolic rollers and bearings for bending, using air and oil, placed in a rotating rotor (1) that contains rollers (32) placed on bearings (34) and shafts (33) inside roller housings (30), where rollers (32) are positioned at an angle with respect to the bending axis and, as bending occurs they cause bending and also as rotor (1) rotates around the item being bent it straightens and feeds the item. Rollers (32) are placed on bearings (34) and are protected through rotational seals (35). The bearings' (34) area of rollers (32) inside the rotational seal (35) is supplied with air at pressure higher than the atmospheric, so that inflow of contaminants are inhibited, or is supplied with air enriched with oil so that bearings (34) are lubricated, and rotational seals (35) located next to bearings (34) of the rollers (32) allow the air flow from the area between the bearings towards the surrounding area.

An apparatus and a method for processing one or more surfaces of a semiconductor wafer with one or more ozone-containing fluids are provided. The apparatus includes an ozone generator, a solvent flask, a gas-liquid mixing device, and a processing chamber capable of receiving the semiconductor wafer. The apparatus may also include one or more gas-liquid separation devices and switching valves. The processing chamber allows the ozone-containing fluids to enter the processing chamber for treating the wafer surface. The effectiveness of the treatment is ensured by enhancing the ozone concentration of the ozone-containing fluids inside the processing chamber, in either or both gas and liquid phases. The employment of a micro chamber as the processing chamber also helps to reduce the consumption of the treatment gas and liquid, as well as the resulted waste emission.

What is presented and described is a method for avoiding the microbial attack of a cleaning apparatus (X2), in particular a cleaning apparatus (X2) for a metering system, wherein the cleaning apparatus (X2) has at least one mechanical cleaning element (X29) with at least one cleaning surface (X31), wherein the method is characterized in that the at least one cleaning surface (X31) of the at least one mechanical cleaning element (X29) is exposed, at least temporarily, to an oxidizing agent. The present invention further relates to a method for cleaning a metering system, in particular for a dispersion, especially a paint-metering system, to a cleaning apparatus, and to a metering system.