Patent classifications
B23K1/0016
ENHANCED CLEANING FOR WATER-SOLUBLE FLUX SOLDERING
An approach to provide an electronic assembly process that includes receiving at least one electronic assembly after a solder reflow process using a Sn-containing solder and a water-soluble flux. The approach includes baking the at least one electronic assembly in an oxygen containing environment and, then cleaning the at least one electronic assembly in an aqueous cleaning process.
METHOD FOR PRODUCING CONDUCTIVE MATERIAL, CONDUCTIVE MATERIAL OBTAINED BY THE METHOD, ELECTRONIC DEVICE CONTAINING THE CONDUCTIVE MATERIAL, LIGHT-EMITTING DEVICE, AND METHOD FOR PRODUCING LIGHT-EMITTING DEVICE
An object of the present invention is to provide a method for producing a conductive material that allows a low electric resistance to be generated, and that is obtained by using an inexpensive and stable conductive material composition containing no adhesive. The conductive material can be provided by a producing method that includes the step of sintering a first conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 μm to 15 μm, and a metal oxide, so as to obtain a conductive material. The conductive material can be provided also by a method that includes the step of sintering a second conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 μm to 15 μm in an atmosphere of oxygen or ozone, or ambient atmosphere, at a temperature in a range of 150° C. to 320° C., so as to obtain a conductive material.
REFLOW OVEN WITH A ZEOLITE BOX, AND A METHOD FOR RECOVERING GAS WITH SUCH ZEOLITE BOX
The present application provides a reflow oven (100) and a gas recovery method. The reflow oven (100) comprises a reflow oven hearth (101), a separator (105), the separator inlet (110) being connected to the gas outlet (102) of the reflow oven hearth (101) so that the gases in the reflow oven hearth (101) can flow into the separator (105), a zeolite box (107), the zeolite box inlet (112) being connected to the separator outlet (111), and the zeolite box outlet (113) being connected to the gas inlet (103) of the reflow oven hearth (101) so that the gases flowing through the separator (105) can enter the zeolite box (107) and the gases flowing through the zeolite box (107) can flow out of the zeolite box outlet (113), a sensor (106), which is provided in the gas passage between said zeolite box outlet (113) and the gas inlet (103) of the reflow oven hearth (101). The reflow oven (100) in the present application enables the gases flowing through the separator (105) to enter the zeolite box (107). After most of the flux is removed from the gases in the separator (105), the flux is further removed in the zeolite box (107). In addition, polygonal zeolites have certain volumes and are supported in the zeolite box (107) to form clearances, and thus almost no resistance is brought about to the flow of the gases in the zeolite box (107).
SOLDER PASTE
Solder paste consisting of 85 to 92% by weight of a tin-based solder and 8 to 15% by weight of a flux, wherein the flux comprises i) 30 to 50% by weight, based on its total weight, of a combination of at least two optionally modified natural resins, ii) 5 to 20% by weight, based on its total weight, of at least one low-molecular carboxylic acid; and iii) 0.4 to 10% by weight, based on its total weight, of at least one amine, and wherein the combination of the optionally modified natural resins has an integral molecular weight distribution of 45 to 70% by area in the molecular weight range of 150 to 550 and of 30 to 55% by area in the molecular weight range of >550 to 10,000 in the combined GPC.
LED tube lamp
An LED tube lamp comprises a glass lamp tube having a main body, two end caps coupled to a respective end of the tube, an LED light strip adhered to inner circumferential surface of the tube by first adhesive, a plurality of LED light sources mounted on a mounting region, a power supply module having a circuit board and a plurality of electronic components mounted on the circuit board, a diffusion layer covering on outer surface or inner surface of the tube, and a protective layer being disposed on surface of the strip and having a plurality of first openings for disposing the plurality of LED light sources. The strip comprises the mounting region and connecting region at an end of the strip. The circuit board is substantially parallel with axial direction of the tube, electrically connects to the connecting region, and stacks with a portion of the connecting region.
Ceramic circuit board and module using same
A ceramic circuit substrate having high bonding performance and excellent thermal cycling resistance properties, wherein a ceramic substrate and a copper plate are bonded by a braze material containing Ag and Cu, at least one active metal component selected from Ti and Zr, and at least one element selected from among In, Zn, Cd, and Sn, wherein a braze material layer, after bonding, has a continuity ratio of 80% or higher and a Vickers hardness of 60 to 85 Hv.
Composite assembly of three stacked joining partners
A composite assembly of three stacked joining partners, and a corresponding method. The three stacked joining partners are materially bonded to one another by an upper solder layer and a lower solder layer. An upper joining partner and a lower joining partner are fixed in their height and have a specified distance from one another. The upper solder layer is fashioned from a first solder agent, having a first melt temperature, between the upper joining partner and a middle joining partner. The second solder layer is fashioned from a second solder agent, having a higher, second melt temperature, between the middle joining partner and the lower joining partner. The upper joining partner has an upwardly open solder compensating opening filled with the first solder agent, from which, to fill the gap between the upper joining partner and the middle joining partner, the first solder agent subsequently flows into the gap.
Wafer processing method
A wafer processing method for processing a wafer formed on a front surface thereof with a plurality of devices having projection-shaped electrodes, the devices being partitioned by streets, includes a cutting step of holding a back surface of the wafer by a holding surface of a chuck table and cutting head portions of the projection-shaped electrodes by a cutting tool slewed in parallel to the holding surface, to make uniform the electrodes in height and expose metallic surfaces; a thermocompression bonding sheet laying step of laying a thermocompression bonding sheet on the front surface of the wafer; a thermocompression bonding step of heating and pressing the thermocompression bonding sheet to perform thermocompression bonding; and a peeling step of peeling off the thermocompression bonding sheet from the wafer, before dividing the wafer into individual device chips and bonding the electrodes to a circuit board.
Semiconductor substrate support with multiple electrodes and method for making same
A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.
COPPER/CERAMIC JOINED BODY AND INSULATED CIRCUIT BOARD
According to the present invention, there is provided a copper/ceramic bonded body including: a copper member made of copper or a copper alloy; and a ceramic member made of silicon-containing ceramics, the copper member and the ceramic member being bonded to each other, in which a maximum indentation hardness in a region is set to be in a range of 70 mgf/μm.sup.2 or more and 150 mgf/μm.sup.2 or less, the region being from 10 μm to 50 μm with reference to a bonded interface between the copper member and the ceramic member toward the copper member side.