A method of forming an assembly in which a metal extension element is connected with a metal stub element, by an intermediate element. The intermediate element extends between first and second ends. The intermediate element is positioned to locate its first end spaced apart from the stub element. An inner end of the extension element is spaced apart from the second end of the intermediate element. Heating elements are located between the elements, to heat the proximal portions of the elements to a hot working temperature, at which the heated portions are subject to plastic deformation. The heating elements are removed, and while the intermediate element is rotating, the first end is urged against the stub element to bond the intermediate element with the stub element. While the extension element is rotating, the inner end is urged against the second end to bond the extension element and the intermediate element.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

This method for producing a structure wherein base materials are bonded by atomic diffusion comprises: a step for applying a liquid resin on the base material; a step for smoothing the surface of the liquid resin by surface tension; a step for forming a resin layer by curing; a step for forming a metal thin film on the resin layer; a step for forming a metal thin film on the base material; and a step for bringing the metal thin film of the base material and the metal thin film of the base material into close contact with each other, thereby bonding the metal thin film of the resin layer and the metal thin film of the base material with each other by atomic diffusion.

A method for selectively adhering braze powders to a surface comprises applying a braze powder to a surface, and then directing a laser beam onto the braze powder while the laser beam moves along a predetermined path relative to the surface. The laser beam selectively heats the braze powder along the predetermined path such that the braze powder is sintered and bonded to the surface. Thus, a braze deposit is formed at one or more predetermined locations on the surface. After forming the braze deposit, excess braze powder, that is, the braze powder not selectively heated by the laser, is removed from the surface.

A method for joining two components of a meltable material comprises the steps of providing a first component having a first border region and a second component having a second border region, placing the second component relative to the first component so as to form an overlap between the first border region and the second border region under a gap between the first border region and the second border region, continuously heating opposed sections of the first border region and the second border region at the same time through at least one energy source arranged in the gap at least partially, continuously providing a relative motion of the at least one energy source along the first border region and the second border region in the gap, and continuously pressing already heated sections of the first border region and the second border region onto each other.

The disclosure herein describes various methods for producing a composite thickness metal part. Such methods include cutting out a base component having a first thickness, cutting out a foil sheet having a second thickness less than the first thickness, and loading the base component and the foil sheet into a fixture. Then the methods include passing the fixture containing the base component and the foil sheet through an ultrasonic welding machine to join the foil sheet to the base component and form an interim part that includes the foil sheet joined to the base component and cutting away preselected sections of the foil sheet from the interim part to produce a final geometry of the composite thickness metal part.

The disclosure herein describes various methods for producing a composite thickness metal part. Such methods include cutting out a base component having a first thickness, cutting out a foil sheet having a second thickness less than the first thickness, and loading the base component and the foil sheet into a fixture. Then the methods include passing the fixture containing the base component and the foil sheet through an ultrasonic welding machine to join the foil sheet to the base component and form an interim part that includes the foil sheet joined to the base component and cutting away preselected sections of the foil sheet from the interim part to produce a final geometry of the composite thickness metal part.

A method of diffusion bonding metal or metal alloy containing workpieces, comprises (a) coating the bonding surfaces of the metal or metal alloy containing workpieces with a layer of a coating material, (b) abrading the coated bonding surfaces to remove surface oxide, the coating material being in liquid form, (c) removing excess coating material or excess abraded metal or metal alloy containing workpiece material from the coated bonding surfaces, and (d) diffusion bonding the coated bonding surfaces of the metal or metal alloy containing workpieces together. The coating material is operable to form a stable barrier on the bonding surfaces of the metal or metal alloy containing workpieces under ambient conditions, and evaporates from the bonding surfaces under diffusion bonding conditions. There is also a bonded workpiece formed using the method of diffusion bonding metal or metal alloy containing workpieces.

A method of diffusion bonding metal or metal alloy containing workpieces, comprises (a) coating the bonding surfaces of the metal or metal alloy containing workpieces with a layer of a coating material, (b) abrading the coated bonding surfaces to remove surface oxide, the coating material being in liquid form, (c) removing excess coating material or excess abraded metal or metal alloy containing workpiece material from the coated bonding surfaces, and (d) diffusion bonding the coated bonding surfaces of the metal or metal alloy containing workpieces together. The coating material is operable to form a stable barrier on the bonding surfaces of the metal or metal alloy containing workpieces under ambient conditions, and evaporates from the bonding surfaces under diffusion bonding conditions. There is also a bonded workpiece formed using the method of diffusion bonding metal or metal alloy containing workpieces.