B23K26/348

WIRE FEEDSTOCK CONTROL DURING ADDITIVE MANUFACTURING
20230051719 · 2023-02-16 ·

An additive manufacturing system includes an energy source and a material delivery device. The energy source is configured to direct an energy beam toward a component to form a melt pool. The material delivery device is configured to feed a wire toward the melt pool to deposit material on the component. In some examples, the material delivery device is configured to discharge a current to the wire to disengage the wire from the melt pool. In some examples, the material delivery device is configured to measure an arc voltage between the wire and the component.

WIRE FEEDSTOCK CONTROL DURING ADDITIVE MANUFACTURING
20230051719 · 2023-02-16 ·

An additive manufacturing system includes an energy source and a material delivery device. The energy source is configured to direct an energy beam toward a component to form a melt pool. The material delivery device is configured to feed a wire toward the melt pool to deposit material on the component. In some examples, the material delivery device is configured to discharge a current to the wire to disengage the wire from the melt pool. In some examples, the material delivery device is configured to measure an arc voltage between the wire and the component.

WIRE FEEDSTOCK CONTROL DURING ADDITIVE MANUFACTURING
20230050995 · 2023-02-16 ·

An additive manufacturing system includes an energy source and a material delivery device. The energy source is configured to direct an energy beam toward a component to form a melt pool. The material delivery device is configured to feed a wire toward the melt pool to deposit material on the component. In some examples, the material delivery device is configured to discharge a current to the wire to disengage the wire from the melt pool. In some examples, the material delivery device is configured to measure an arc voltage between the wire and the component.

JOINING METHOD

A joining method includes: an overlapping step of overlapping a front surface of a first metal member with a back surface of a second metal member; and a welding step of welding the first metal member with the second metal member by hybrid welding, using a hybrid welding machine including a leading laser welding unit and a trailing arc welding unit. In the welding step, laser welding, by irradiating with a laser beam, and arc welding are performed from a front surface of the second metal member, along a preset travel route which is set on an overlapped part formed by the first metal member and the second metal member overlapped with each other, to the overlapped part, and the laser beam is oscillated to cross the preset travel route.

JOINING METHOD

A joining method includes: an overlapping step of overlapping a front surface of a first metal member with a back surface of a second metal member; and a welding step of welding the first metal member with the second metal member by hybrid welding, using a hybrid welding machine including a leading laser welding unit and a trailing arc welding unit. In the welding step, laser welding, by irradiating with a laser beam, and arc welding are performed from a front surface of the second metal member, along a preset travel route which is set on an overlapped part formed by the first metal member and the second metal member overlapped with each other, to the overlapped part, and the laser beam is oscillated to cross the preset travel route.

JOINING METHOD

A joining method includes: an overlapping step of overlapping a front surface of a first metal member with a back surface of a second metal member; and a welding step of welding the first metal member with the second metal member by hybrid welding, with use of a hybrid welding machine including a leading laser welding unit and a trailing arc welding unit. In the welding step, laser welding, by irradiating a laser beam, and arc welding are performed, along a preset travel route set on an inner corner portion formed by the front surface of the first metal member and an end surface of the second metal member, to the inner corner portion and the laser beam is oscillated to cross the preset travel route.

Apparatus and method for directional etch with micron zone beam and angle control

A semiconductor fabrication apparatus includes a source chamber being operable to generate charged particles; and a processing chamber integrated with the source chamber and configured to receive the charged particles from the source chamber. The processing chamber includes a wafer stage being operable to secure and move a wafer, and a laser-charged particles interaction module that further includes a laser source to generate a first laser beam; a beam splitter configured to split the first laser beam into a second laser beam and a third laser beam; and a mirror configured to reflect the third laser beam such that the third laser beam is redirected to intersect with the second laser beam to form a laser interference pattern at a path of the charged particles, and wherein the laser interference pattern modulates the charged particles by in a micron-zone mode for processing the wafer using the modulated charged particles.

Apparatus and method for directional etch with micron zone beam and angle control

A semiconductor fabrication apparatus includes a source chamber being operable to generate charged particles; and a processing chamber integrated with the source chamber and configured to receive the charged particles from the source chamber. The processing chamber includes a wafer stage being operable to secure and move a wafer, and a laser-charged particles interaction module that further includes a laser source to generate a first laser beam; a beam splitter configured to split the first laser beam into a second laser beam and a third laser beam; and a mirror configured to reflect the third laser beam such that the third laser beam is redirected to intersect with the second laser beam to form a laser interference pattern at a path of the charged particles, and wherein the laser interference pattern modulates the charged particles by in a micron-zone mode for processing the wafer using the modulated charged particles.

Weld training systems with resettable target tool images

Described herein are examples of weld training systems that show (e.g., transparent and/or translucent) “ghost” images of a welding tool on a display screen of a welding headgear to indicate target positions and/or target orientations of an actual welding tool. In some examples, the weld training systems may additionally “reset” the target tool image to a position closer to the actual welding tool if the target tool image gets too far away. The ability to “reset” the target tool image to a position closer to the actual welding tool may help in minimizing a risk that an operator 106 will overcompensate to try to catch up with the target tool image, which can be detrimental to the weld. Additionally, resetting the target tool image to a position closer the welding tool may allow an operator to better perceive and/or understand differences in orientation and/or other technique parameters.

Methods and systems for coherent imaging and feedback control for modification of materials using dynamic optical path switch in the reference arms

Methods and systems are provided for using optical interferometry in the context of material modification processes such as surgical laser or welding applications. An imaging optical source that produces imaging light. A feedback controller controls at least one processing parameter of the material modification process based on an interferometry output generated using the imaging light. A method of processing interferograms is provided based on homodyne filtering. A method of generating a record of a material modification process using an interferometry output is provided.