A method of manufacturing a gallium nitride substrate includes preparation of a gallium nitride wafer, formation of a transformation layer, and formation of the gallium nitride substrate. The gallium nitride has a first main surface and a second main surface on a side opposite from the first main surface. The gallium nitride wafer is made of a hexagonal crystal, and each of the first main surface and the second main surface is a {1-100} m-plane of the hexagonal crystal. The transformation layer is formed along a planar direction of the gallium nitride wafer by emitting a laser beam into the gallium nitride wafer. The gallium nitride substrate is formed from the gallium nitride wafer by dividing the gallium nitride wafer at the transformation layer. In the formation of the transformation layer, the laser beam is emitted to form an irradiation mark for forming the transformation layer.

A method of manufacturing a gallium nitride substrate includes preparation of a gallium nitride wafer, formation of a transformation layer, and formation of the gallium nitride substrate. The gallium nitride has a first main surface and a second main surface on a side opposite from the first main surface. The gallium nitride wafer is made of a hexagonal crystal, and each of the first main surface and the second main surface is a {1-100} m-plane of the hexagonal crystal. The transformation layer is formed along a planar direction of the gallium nitride wafer by emitting a laser beam into the gallium nitride wafer. The gallium nitride substrate is formed from the gallium nitride wafer by dividing the gallium nitride wafer at the transformation layer. In the formation of the transformation layer, the laser beam is emitted to form an irradiation mark for forming the transformation layer.

Aspects of the invention may be directed to a method of creating a predetermined structure from a diamond bulk. In some embodiments, the method may include: irradiating the diamond bulk with at least one laser having a focal point at a predetermined location, the laser may create graphitization at locations where the focal point of the laser engages the diamond bulk; at least one of: moving the diamond bulk to be positioned with the focal point of the laser within the diamond bulk, and moving the at least one laser such that diamond bulk be positioned with the focal point of the laser, along at least one axis wherein the movement corresponds to a predefined scheme; removing of the graphite from the diamond bulk; and extracting the predetermined structure from the diamond bulk.

Aspects of the invention may be directed to a method of creating a predetermined structure from a diamond bulk. In some embodiments, the method may include: irradiating the diamond bulk with at least one laser having a focal point at a predetermined location, the laser may create graphitization at locations where the focal point of the laser engages the diamond bulk; at least one of: moving the diamond bulk to be positioned with the focal point of the laser within the diamond bulk, and moving the at least one laser such that diamond bulk be positioned with the focal point of the laser, along at least one axis wherein the movement corresponds to a predefined scheme; removing of the graphite from the diamond bulk; and extracting the predetermined structure from the diamond bulk.

An approach for transferring solder to a laminate structure in IC (integrated circuit) packaging is disclosed. The approach comprises of a device and method of applying the device. The device comprises of a substrate, a laser ablation layer and solder layer. The device is made by depositing a laser ablation layer onto a glass/silicon substrate and plenty of solder powder/solder pillar is further deposited onto the laser ablation layer. The laminate packaging substrate includes pads with a pad surface finishing layer made from gold. The solder layer of the device is bonded to the laminate packaging substrate. Once bonded, using laser to irradiate the laser ablation layer, the substrate is removed from the laminate.

A method for producing a light deflection structure includes the steps of: a) producing a first plurality of interaction regions, in which at least one laser beam interacts with the substrate material along a first path with a spatial overlap of the interaction regions, b) producing a second plurality of interaction regions with a spatial overlap of the interaction regions along a second path offset with respect and with a spatial overlap with the first path, c) optionally producing a further plurality of interaction regions with a spatial overlap of the further interaction regions along a further path offset with respect to and with a spatial overlap with the path used immediately before, and d) optionally carrying out step c) multiple times. The method also includes producing type II modifications of the substrate material, and changing at least one process parameter from one beam path to another beam path.

A method for producing a light deflection structure includes the steps of: a) producing a first plurality of interaction regions, in which at least one laser beam interacts with the substrate material along a first path with a spatial overlap of the interaction regions, b) producing a second plurality of interaction regions with a spatial overlap of the interaction regions along a second path offset with respect and with a spatial overlap with the first path, c) optionally producing a further plurality of interaction regions with a spatial overlap of the further interaction regions along a further path offset with respect to and with a spatial overlap with the path used immediately before, and d) optionally carrying out step c) multiple times. The method also includes producing type II modifications of the substrate material, and changing at least one process parameter from one beam path to another beam path.

A method for inspecting a transparent workpiece comprises: directing light from an illumination source onto a plurality of defects formed in the transparent workpiece, wherein the plurality of defects extends in a defect direction, wherein the transparent workpiece comprises a first surface and a second surface; detecting a scattering image signal from light scattered by the plurality of defects using an imaging system, wherein an imaging axis of the imaging system extends at a non-zero imaging angle relative to the defect direction, wherein entireties of at least a subset of the plurality of defects are within a depth of field of the imaging system; and generating a three-dimensional image of at least one of the plurality of defects based on the scattering signal.

A laser beam irradiation unit of a laser processing apparatus includes a laser oscillator that oscillates a laser, a Y-axis scanner that executes a high-speed scan with a laser beam emitted from the laser oscillator in a Y-axis direction, an X-axis scanner that executes processing feed of the laser beam emitted from the laser oscillator in an X-axis direction, and a beam condenser. The Y-axis scanner is selected from any of an AOD, a resonant scanner, and a polygon scanner and the X-axis scanner is selected from a galvano scanner and a resonant scanner.

A through-glass via-hole formation method includes: forming a hole-shaped deformed region extending in a thickness direction of a glass substrate by irradiating the glass substrate with a laser beam at an energy intensity not exceeding an ablation threshold of the glass substrate; and forming a via-hole through the glass substrate along the deformed region by immersing the glass substrate in an etching solution such that the deformed region is etched and removed, wherein an etching solution having a first concentration is used as the etching solution to allow the via-hole to have a first aspect ratio, and an etching solution having a second concentration greater than the first concentration is used as the etching solution to allow the via-hole to have a second aspect ratio smaller than the first aspect ratio.