A first peel-off layer extending along a side surface of a truncated cone that has a first bottom surface positioned near a face side of a wafer and a second bottom surface positioned within the wafer and smaller in diameter than the first bottom surface, and a second peel-off layer extending along the second bottom surface of the truncated cone are formed in the wafer. Then, external forces are exerted on the wafer thicknesswise of the wafer, thereby dividing the wafer along the first peel-off layer and the second peel-off layer that function as division initiating points.

A wafer producing method includes a peel-off layer forming step of forming a peel-off layer by positioning a focused spot of a laser beam having a wavelength transmittable through an ingot to a depth corresponding to a thickness of the wafer to be produced from the ingot from a first end surface of the ingot and applying the laser beam to the ingot, a first chamfered portion forming step of forming a first chamfered portion by applying, from the first end surface side to a peripheral surplus region of the wafer, a laser beam having a wavelength absorbable by the wafer, a peeling-off step of peeling off the wafer to be produced, and a second chamfered portion forming step of forming a second chamfered portion by applying, from a peel-off surface side of the wafer, the laser beam having a wavelength absorbable by the wafer.

A wafer producing method includes a peel-off layer forming step of forming a peel-off layer by positioning a focused spot of a laser beam having a wavelength transmittable through an ingot to a depth corresponding to a thickness of the wafer to be produced from the ingot from a first end surface of the ingot and applying the laser beam to the ingot, a first chamfered portion forming step of forming a first chamfered portion by applying, from the first end surface side to a peripheral surplus region of the wafer, a laser beam having a wavelength absorbable by the wafer, a peeling-off step of peeling off the wafer to be produced, and a second chamfered portion forming step of forming a second chamfered portion by applying, from a peel-off surface side of the wafer, the laser beam having a wavelength absorbable by the wafer.

A method of separating a transparent mother sheet includes contacting a first surface of the transparent mother sheet with an open ended pressure assembly including a pressure vessel shell, thereby forming a shell cavity defined by the first surface of the transparent mother sheet and the pressure vessel shell, where the transparent mother sheet comprises a damage path. The method also includes removing gas from the shell cavity through a fluid removal outlet extending through the pressure vessel shell to reduce a cavity pressure in the shell cavity, thereby applying stress to the damage path to separate a portion of the transparent mother sheet along the damage path.

A laser pipe cutting device is provided. It includes a cutting head, a lathe bed, a first chuck, a second chuck and a third chuck; the first chuck is a fixed chuck for positioning axially and radially a pipe fitting; the second chuck is a rolling chuck for positioning radially the pipe fitting; and a fixed clamping disc and a rolling clamping disc are arranged on the third chuck at both ends. In the scheme, the third chuck integrates both the rolling clamping function and the fixed clamping function to achieve larger supporting weight and more accurate clamping precision, so that the chucks can drive a thin pipe fitting to rotate at a higher speed, the cutting efficiency is improved, and no-dead-angle and zero-tailing cutting is achieved.

A method of manufacturing an optionally shaped chip from a substrate having a crystalline structure includes establishing a projected dicing line on the substrate representing a contour of a chip to be fabricated from the substrate, and establishing a straight division assisting line contacting the contour of the chip for assisting in dividing the substrate. A division initiating point is formed after the projected dicing line is established and a laser beam is applied along the contour of the chip and the division assisting line while positioning a focused spot of the laser beam in the substrate at a predetermined position spaced from an upper surface of the substrate, thereby forming division initiating points in the substrate. The substrate is divided by applying external forces to the substrate in which the division initiating points have been formed, to divide the substrate along the division initiating points.

Disclosed herein are glass articles coated on at least one surface with an electrochromic layer and comprising minimal regions of laser damage, and methods for laser processing such glass articles. Insulated glass units comprising such coated glass articles are also disclosed herein.

Disclosed herein are glass articles coated on at least one surface with an electrochromic layer and comprising minimal regions of laser damage, and methods for laser processing such glass articles. Insulated glass units comprising such coated glass articles are also disclosed herein.

A substrate dividing method includes preparing a substrate that is formed with division start points along streets and that has a protective sheet attached to a surface on one side thereof and rolling a roller on a surface on the other side of the substrate, to attach an expanding tape. Next, suction by a holding table is cancelled, and, in a state in which a slight gap is formed between a holding surface of the holding table and the protective sheet, the roller is brought into contact with the expanding tape and rolled, thereby extending cracks extending from the division start points while causing the substrate to sink into the gap through the protective sheet with the division start points as starting points, and the expanding tape is expanded to widen the chip intervals with the division start points as starting points.

The present invention relates to ultrafast laser inscribed structures for signal concentration in focal plan arrays, focal plan arrays, imaging and/or sensing apparatuses comprising said focal plan arrays, as well as methods of making and/or using ultrafast laser inscribed structures for signal concentration in focal plan arrays, focal plan arrays, imaging and/or sensing apparatuses comprising said focal plan arrays. Such ultrafast laser inscribed structures are particularly adapted to condense broad band radiation, thus allowing increased sensing efficiencies to be obtained from imaging and/or sensing apparatuses. Such ultrafast laser inscribed structures can be efficiently produced by the processes provided herein.