B23K35/005

Semiconductor substrate support with multiple electrodes and method for making same

A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.

METHODS FOR AND DEVICES PREPARED FROM SHAPE MATERIAL ALLOY WELDING
20220314375 · 2022-10-06 ·

Described herein are methods for and devices prepared from welding shape memory alloys. The weld produced from the present methods can approach 100% joint strength relative the ultimate tensile strength of the shape memory alloy, and are substantially free of heat affected zones and brittle intermetallics.

Soldering material for active soldering and method for active soldering
11338397 · 2022-05-24 · ·

A soldering material (1) for active soldering, in particular for active soldering of a metallization (3) to a carrier layer (2) comprising ceramics, wherein the soldering material comprises copper and is substantially silver-free.

SEMICONDUCTOR SUBSTRATE SUPPORT WITH MULTIPLE ELECTRODES AND METHOD FOR MAKING SAME
20220143726 · 2022-05-12 · ·

A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.

Multi-metallic articles of manufacture

Methods disclosed herein include using additive manufacturing to create a joint between a first metallic material and a second metallic material that is different from the first metallic material, wherein the porosity of the joint is less than about 0.1 percent by volume measured according to ASTM B-962. The additive manufacturing can be performed such that no intermetallic brittle phase forms between the first metallic material and the second metallic material.

Semiconductor substrate support with multiple electrodes and method for making same

A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.

CLADDED ARTICLE WITH CLAD LAYER HAVING VARYING THICKNESS

A cladded article may include a first metallic layer, a clad layer, and a first solid-state welding interface region positioned between the clad layer and the first metallic layer. The clad layer may include a first clad layer region having a first clad layer thickness in a thickness direction of the clad layer and a second clad layer region having a second clad layer thickness in the thickness direction of the clad layer. The second clad layer thickness may be greater than the first clad layer thickness.

MULTI-LAYER CERAMIC PLATE DEVICE

An electrostatic chuck includes a ceramic top plate layer made of a beryllium oxide material, a ceramic bottom plate layer made of a beryllium oxide material, a ceramic middle plate layer disposed between the ceramic top plate layer and the ceramic bottom plate layer, an electrode layer disposed between the ceramic top plate layer and the ceramic middle plate layer, and a heater layer disposed between the ceramic middle plate layer and the ceramic bottom plate layer. The electrode layer joins and hermetically seals the ceramic top plate layer to the ceramic middle plate layer, and the heater layer joins and hermetically seals the ceramic middle plate layer to the ceramic bottom plate layer.

Low temperature method for hermetically joining non-diffusing ceramic materials in multi-layer plate devices

A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The wetting and flow of the joining material is controlled by the selection of the joining material, the joining temperature, the joining atmosphere, and other factors. The ceramic pieces may be on a non-diffusable type, such as aluminum nitride, alumina, beryllium oxide, and zirconia, and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.

SOLDERING MATERIAL FOR ACTIVE SOLDERING AND METHOD FOR ACTIVE SOLDERING
20200384579 · 2020-12-10 ·

A soldering material (1) for active soldering, in particular for active soldering of a metallization (3) to a carrier layer (2) comprising ceramics, wherein the soldering material comprises copper and is substantially silver-free.