Patent classifications
B23K35/3006
Low silver solder for welding the electric vacuum device and a preparation method thereof
The application relates to a low-silver solder for welding an electric vacuum device and a preparation method thereof, The low-silver solder for welding the electric vacuum device is characterized by consisting of Ag, Cu, Ni and a trace element R, wherein the low-silver solder comprises the following components in percentage by mass: 65-71% of Ag, 0-0.1% of Ni, 0-0.1% of trace element R and the balance of Cu; the trace element R consists of one or more of P, Sc, Be, Zr and La. A method of producing the low silver solder, characterized by the steps of: Ag, Cu except from copper foil and Ni are evenly preset in a smelting crucible, the trace elements wrapped by the copper foil are placed above main raw materials consisting of the Ag,Cu except from copper foil and Ni, then smelting and casting are carried out by adopting a vacuum induction smelting furnace, the vacuum degree of a furnace body reaches 10.sup.−1 Pa during smelting and casting, and finally a strip material or a wire materialis prepared by a post treatment process, which has the advantages of good processing performance, good fluidity, low air content in a welding line and excellent thermal stability.
ABRASIVE TOOL HAVING A BRAZE JOINT WITH INSOLUBLE PARTICLES
Multi-part abrasive tools are disclosed herein. In one embodiment, an abrasive tool includes a first body, a second body, and a braze layer that couples the first body to the second body. The braze layer includes a braze alloy having a liquidus temperature and insoluble particles at least partially surrounded by the braze alloy. The insoluble particles are insoluble with the braze alloy at temperatures at least 100° C. above the liquidus temperature of the braze alloy.
PASTE COMPOSITION AND SEMICONDUCTOR DEVICE
This paste composition includes silver particles (A), a thermosetting resin (B), a curing agent (C), and a solvent (D). A shrinkage rate after curing of the paste composition is 15% or less.
Ceramic circuit board and module using same
A ceramic circuit substrate having high bonding performance and excellent thermal cycling resistance properties, wherein a ceramic substrate and a copper plate are bonded by a braze material containing Ag and Cu, at least one active metal component selected from Ti and Zr, and at least one element selected from among In, Zn, Cd, and Sn, wherein a braze material layer, after bonding, has a continuity ratio of 80% or higher and a Vickers hardness of 60 to 85 Hv.
Brazed electrode for plasma cutting torch
A silver-copper cutting electrode assembly, and method of manufacture is provided with optimized attributes to allow for improved durability, integrity and manufacturability. An electrode has a silver tip portion which is brazed to a copper body portion where the silver portion and joint have a particular structural relationship.
SINTERING COMPOSITION
A sintering composition, consisting essentially of: a solvent; and a metal complex dissolved in the solvent, wherein: the sintering composition contains at least 60 wt. % of the metal complex, based on the total weight of the sintering composition; and the sintering composition contains at least 20 wt. % of the metal of the metal complex, based on the total weight of the sintering composition.
METAL JOINTED BODY, SEMICONDUCTOR DEVICE, WAVE GUIDE TUBE, AND METHOD FOR JOINING MEMBERS TO BE JOINED
Provided is a metal jointed body, joined by solid-phase joining in the atmosphere, in which no protrusion of molten joining material occurs, that improves dimensional stability. A metal jointed body is formed by (A) making Ag films of two metal laminated bodies opposed to each other, the metal jointed body being configured by sequentially laminating a Zn film and an Ag film on an Al substrate serving as a member to be joined, and (B) bringing the Ag films into contact with each other, then (C) heating is performed while pressurizing, and closely adhering and solid-phase joining the Ag films to each other. The completed metal jointed body is a portion where Al—Ag alloy layers are provided on both sides of an Ag—Zn—Al alloy layer to join the Al substrates to each other.
Method for producing a metal-ceramic substrate, solder system, and metal-ceramic substrate produced using such a method
A method for manufacturing a metal-ceramic substrate (1) includes providing a ceramic layer (10), a metal layer (20) and a solder layer (30) coating the ceramic layer (10) and/or the metal layer (20) and/or the solder layer (30) with an active metal layer (40), arranging the solder layer (30) between the ceramic layer (10) and the metal layer (20) along a stacking direction (S), forming a solder system (35) comprising the solder layer and the active metal layer (40), wherein a solder material of the solder layer (30) is free of a melting point lowering material and bonding the metal layer (20) to the ceramic layer (10) via the solder system (35) by means of an active solder process.
Stable undercooled metallic particles for engineering at ambient conditions
Undercooled liquid metallic core-shell particles, whose core is stable against solidification at ambient conditions, i.e. under near ambient temperature and pressure conditions, are used to join or repair metallic non-particulate components. The undercooled-shell particles in the form of nano-size or micro-size particles comprise an undercooled stable liquid metallic core encapsulated inside an outer shell, which can comprise an oxide or other stabilizer shell typically formed in-situ on the undercooled liquid metallic core. The shell is ruptured to release the liquid phase core material to join or repair a component(s).
Ag alloy bonding wire for semiconductor device
An object of the present invention is to provide an Ag alloy bonding wire for a semiconductor device capable of extending the high-temperature life of a wire, reducing chip damage during ball bonding, and improving characteristics such as ball bonding strength in applications of on-vehicle memory devices. The Ag alloy bonding wire for a semiconductor device according to the present invention contains one or more of In and Ga for a total of 110 at ppm or more and less than 500 at ppm, and one or more of Pd and Pt for a total of 150 at ppm or more and less than 12,000 at ppm, and a balance being made up of Ag and unavoidable impurities.