A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, and a pad cooling assembly. The pad cooling assembly has an arm extending over the platen, a nozzle suspended by the arm and coupled to a source of coolant fluid, the nozzle positioned to spray coolant fluid from the source onto the polishing surface of the polishing pad, and an opening in the arm adjacent the nozzle and a passage extending in the arm from the opening, the opening positioned sufficiently close to the nozzle that a flow of coolant fluid from the nozzle entrains air from the opening.

A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, and a pad cooling assembly. The pad cooling assembly has an arm extending over the platen, a nozzle suspended by the arm and coupled to a source of coolant fluid, the nozzle positioned to spray coolant fluid from the source onto the polishing surface of the polishing pad, and an opening in the arm adjacent the nozzle and a passage extending in the arm from the opening, the opening positioned sufficiently close to the nozzle that a flow of coolant fluid from the nozzle entrains air from the opening.

An object of the present invention is to improve in-plane uniformity in polishing in a polishing device. A temperature adjusting device for adjusting temperature of a rotating polishing pad comprises: a heat conductor that can contact with a top face of the polishing pad; an arm for holding the heat conductor above the polishing pad; column members formed to stand on a top face of the heat conductor, comprising an upstream-side column member and a downstream-side column member arranged at a position at an upstream/downstream side of rotation of the polishing pad; and overhung members extending, from the upstream-side column member and the downstream-side column member, in directions that are parallel to the top face of the heat conductor; wherein the overhung members can contact with a top face of the arm.

An object of the present invention is to improve in-plane uniformity in polishing in a polishing device. A temperature adjusting device for adjusting temperature of a rotating polishing pad comprises: a heat conductor that can contact with a top face of the polishing pad; an arm for holding the heat conductor above the polishing pad; column members formed to stand on a top face of the heat conductor, comprising an upstream-side column member and a downstream-side column member arranged at a position at an upstream/downstream side of rotation of the polishing pad; and overhung members extending, from the upstream-side column member and the downstream-side column member, in directions that are parallel to the top face of the heat conductor; wherein the overhung members can contact with a top face of the arm.

A polishing assembly for polishing of silicon wafers includes a polishing pad, a polishing head assembly, a temperature sensor, and a controller. The polishing head assembly holds a silicon wafer to position the silicon wafer in contact with the polishing pad. The polishing head assembly selectively varies a removal profile of the silicon wafer. The temperature sensor collects thermal data from a portion of the polishing pad. The controller is communicatively coupled to the polishing head assembly and the temperature sensor. The controller receives the thermal data from the temperature sensor and operates the polishing head assembly to selectively vary the removal profile of the silicon wafer based at least in part on the thermal data.

A polishing assembly for polishing of silicon wafers includes a polishing pad, a polishing head assembly, a temperature sensor, and a controller. The polishing head assembly holds a silicon wafer to position the silicon wafer in contact with the polishing pad. The polishing head assembly selectively varies a removal profile of the silicon wafer. The temperature sensor collects thermal data from a portion of the polishing pad. The controller is communicatively coupled to the polishing head assembly and the temperature sensor. The controller receives the thermal data from the temperature sensor and operates the polishing head assembly to selectively vary the removal profile of the silicon wafer based at least in part on the thermal data.

A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a dispenser to supply a polishing liquid to the polishing surface, and a temperature control system including a body configured to contact the polishing surface or the polishing liquid on the polishing surface. The body supports a thermal control module positioned over the polishing pad.

A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a dispenser to supply a polishing liquid to the polishing surface, and a temperature control system including a body configured to contact the polishing surface or the polishing liquid on the polishing surface. The body supports a thermal control module positioned over the polishing pad.

A polishing method capable of terminating polishing of a substrate, such as a wafer, at a preset polishing time is disclosed. The polishing method includes: polishing a substrate by pressing the substrate against a polishing surface of a polishing pad, while regulating a temperature of the polishing surface by a heat exchanger; calculating a target polishing rate required for an actual polishing time to coincide with a target polishing time, the actual polishing time being a time duration from start of polishing the substrate until a film thickness of the substrate reaches a target thickness; determining a target temperature of the polishing surface that can achieve the target polishing rate; and during polishing of the substrate, changing a temperature of the polishing surface to the target temperature by the heat exchanger.

A polishing method capable of terminating polishing of a substrate, such as a wafer, at a preset polishing time is disclosed. The polishing method includes: polishing a substrate by pressing the substrate against a polishing surface of a polishing pad, while regulating a temperature of the polishing surface by a heat exchanger; calculating a target polishing rate required for an actual polishing time to coincide with a target polishing time, the actual polishing time being a time duration from start of polishing the substrate until a film thickness of the substrate reaches a target thickness; determining a target temperature of the polishing surface that can achieve the target polishing rate; and during polishing of the substrate, changing a temperature of the polishing surface to the target temperature by the heat exchanger.