A tool and methods of removing films from bevel regions of wafers are disclosed. The bevel film removal tool includes an inner motor nested within an outer motor and a bevel brush secured to the outer motor. The bevel brush is adjustable radially outward to allow the wafer to be inserted in the bevel brush and to be secured to the inner motor. The bevel brush is adjustable radially inward to engage one or more sections of the bevel brush and to bring the bevel brush in contact with a bevel region of the wafer. Once engaged, a solution may be dispensed at the engaged sections of the bevel brush and the inner motor and the outer motor may be rotated such that the bevel brush is rotated against the wafer such that the bevel films of the wafer are both chemically and mechanically removed.

A method includes: vacuuming at least one area among a plurality of areas formed concentrically between a top face of the elastic film and the top ring body under a state where a bottom face of the substrate is supported by a support member and a top face of the substrate contacts a bottom face of the elastic film; measuring a flow volume of gas in an area located outside one or more areas to be vacuumed; determining whether the substrate is adsorbed to the top ring based on the flow volume of the gas; and after it is determined that the substrate is adsorbed to the top ring, separating the elastic film to which the substrate is adsorbed from the support member.

A method includes: vacuuming at least one area among a plurality of areas formed concentrically between a top face of the elastic film and the top ring body under a state where a bottom face of the substrate is supported by a support member and a top face of the substrate contacts a bottom face of the elastic film; measuring a flow volume of gas in an area located outside one or more areas to be vacuumed; determining whether the substrate is adsorbed to the top ring based on the flow volume of the gas; and after it is determined that the substrate is adsorbed to the top ring, separating the elastic film to which the substrate is adsorbed from the support member.

A tool and methods of removing films from bevel regions of wafers are disclosed. The bevel film removal tool includes an inner motor nested within an outer motor and a bevel brush secured to the outer motor. The bevel brush is adjustable radially outward to allow the wafer to be inserted in the bevel brush and to be secured to the inner motor. The bevel brush is adjustable radially inward to engage one or more sections of the bevel brush and to bring the bevel brush in contact with a bevel region of the wafer. Once engaged, a solution may be dispensed at the engaged sections of the bevel brush and the inner motor and the outer motor may be rotated such that the bevel brush is rotated against the wafer such that the bevel films of the wafer are both chemically and mechanically removed.

Provided are a method for polishing a silicon substrate according to which PID can be reduced and a polishing composition set usable in the polishing method. The silicon substrate polishing method provided by this invention comprises a stock polishing step and a final polishing step. The stock polishing step comprises several stock polishing sub-steps carried out on one same platen. The several stock polishing sub-steps comprise a final stock polishing sub-step carried out while supplying a final stock polishing slurry P.sub.F to the silicon substrate. The total amount of the final stock polishing slurry P.sub.F supplied to the silicon substrate during the final stock polishing sub-step has a total weight of Cu and a total weight of Ni, at least one of which being 1 μg or less.

Provided are a method for polishing a silicon substrate according to which PID can be reduced and a polishing composition set usable in the polishing method. The silicon substrate polishing method provided by this invention comprises a stock polishing step and a final polishing step. The stock polishing step comprises several stock polishing sub-steps carried out on one same platen. The several stock polishing sub-steps comprise a final stock polishing sub-step carried out while supplying a final stock polishing slurry P.sub.F to the silicon substrate. The total amount of the final stock polishing slurry P.sub.F supplied to the silicon substrate during the final stock polishing sub-step has a total weight of Cu and a total weight of Ni, at least one of which being 1 μg or less.

A grinding tool kit, apparatus and method for finish machining of a rolling surface of a bearing roller. The apparatus comprises a main machine, an external circulation system, a grinding tool kit and a grinding tool kit clamp. A configuration of the main machine comprise a grinding strip assembly rotary type and a grinding sleeve rotary type. The external circulation system comprises a collection unit (41), a sorting unit (42), a feeding unit (43) and a transmission subsystem. The grinding tool kit comprises a grinding sleeve (21) remaining coaxial during working, and a grinding strip assembly penetrating through the grinding sleeve (21), an inner surface of the grinding sleeve (21) is provided with a first spiral groove (211); and the grinding strip assembly comprises a plurality of grinding strips (22), front surfaces of which are provided with linear grooves (221) or second spiral grooves distributed in a circumferential columnar array.

A chemical mechanical polishing (CMP) apparatus includes a polishing pad on a polishing platen, a polishing head on the polishing pad, the polishing head having a membrane to hold a wafer on the polishing pad, and a polishing slurry feeding line to feed a polishing slurry, and a retainer ring around the membrane and in contact with the polishing pad to prevent detachment of the wafer, the retainer ring including a polishing slurry feeding inlet connected to the polishing slurry feeding line to feed the polishing slurry onto the polishing pad.

A chemical mechanical polishing (CMP) apparatus includes a polishing pad on a polishing platen, a polishing head on the polishing pad, the polishing head having a membrane to hold a wafer on the polishing pad, and a polishing slurry feeding line to feed a polishing slurry, and a retainer ring around the membrane and in contact with the polishing pad to prevent detachment of the wafer, the retainer ring including a polishing slurry feeding inlet connected to the polishing slurry feeding line to feed the polishing slurry onto the polishing pad.

A substrate polishing apparatus is disclosed that includes a polishing platform having two or more zones, each zone adapted to receive a different slurry component. A substrate polishing system is provided having a holder to hold a substrate, a polishing platform having a polishing pad, and a distribution system adapted to dispense, in a timed sequence, at least two different slurry components selected from a group consisting of an oxidation slurry component, a material removal slurry component, and a corrosion inhibiting slurry component. Polishing methods and systems adapted to polish substrates are provided, as are numerous other aspects.