Patent classifications
B24B37/34
Gas entrainment during jetting of fluid for temperature control in chemical mechanical polishing
A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, and a pad cooling assembly. The pad cooling assembly has an arm extending over the platen, a nozzle suspended by the arm and coupled to a source of coolant fluid, the nozzle positioned to spray coolant fluid from the source onto the polishing surface of the polishing pad, and an opening in the arm adjacent the nozzle and a passage extending in the arm from the opening, the opening positioned sufficiently close to the nozzle that a flow of coolant fluid from the nozzle entrains air from the opening.
Gas entrainment during jetting of fluid for temperature control in chemical mechanical polishing
A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, and a pad cooling assembly. The pad cooling assembly has an arm extending over the platen, a nozzle suspended by the arm and coupled to a source of coolant fluid, the nozzle positioned to spray coolant fluid from the source onto the polishing surface of the polishing pad, and an opening in the arm adjacent the nozzle and a passage extending in the arm from the opening, the opening positioned sufficiently close to the nozzle that a flow of coolant fluid from the nozzle entrains air from the opening.
Retaining ring with shaped surface and method of forming
- Hung Chih Chen ,
- Steven M. Zuniga ,
- Charles C. Garretson ,
- Douglas R. McAllister ,
- Jian Lin ,
- Stacy Meyer ,
- Sidney P. Huey ,
- Jeonghoon Oh ,
- Trung T. Doan ,
- Jeffrey P. Schmidt ,
- Martin S. Wohlert ,
- Kerry F. Hughes ,
- James C. Wang ,
- Danny Cam Toan Lu ,
- Romain Beau De Lamenie ,
- Venkata R. Balagani ,
- Aden Martin Allen ,
- Michael Jon Fong
A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.
Pad removal method
A pad removal method includes affixing a first end of a pad guide to a first edge location of a pad. The pad removal method further includes affixing a second end of the pad guide to a second edge location of the pad. The pad removal method further includes moving the first end from a first position, a first distance from the second edge location, to a second position, a second distance from the second edge location, wherein the first distance is greater than a diameter of the pad, and the second distance is less than the diameter of the pad.
Pad removal method
A pad removal method includes affixing a first end of a pad guide to a first edge location of a pad. The pad removal method further includes affixing a second end of the pad guide to a second edge location of the pad. The pad removal method further includes moving the first end from a first position, a first distance from the second edge location, to a second position, a second distance from the second edge location, wherein the first distance is greater than a diameter of the pad, and the second distance is less than the diameter of the pad.
CHEMICAL MECHANICAL POLISHING APPARATUS
Disclosed is a chemical mechanical polishing apparatus. The chemical mechanical polishing apparatus comprises a lower base, a platen configured to rotate and provided on a top surface of the lower base, a polishing pad on the platen; and at least one slurry supply device that is disposed adjacent to the polishing pad and supplies a slurry to the polishing pad. The slurry supply device comprises a capillary nozzle that is disposed over the polishing pad and includes a pin-type conductive tip therein, a slurry supply unit that supplies the slurry into the capillary nozzle, and a voltage supply unit that applies a voltage to the pin-type conductive tip.
CHEMICAL MECHANICAL POLISHING APPARATUS
Disclosed is a chemical mechanical polishing apparatus. The chemical mechanical polishing apparatus comprises a lower base, a platen configured to rotate and provided on a top surface of the lower base, a polishing pad on the platen; and at least one slurry supply device that is disposed adjacent to the polishing pad and supplies a slurry to the polishing pad. The slurry supply device comprises a capillary nozzle that is disposed over the polishing pad and includes a pin-type conductive tip therein, a slurry supply unit that supplies the slurry into the capillary nozzle, and a voltage supply unit that applies a voltage to the pin-type conductive tip.
MACHINE TOOL
A machine tool includes a workpiece spindle unit (15) including a workpiece spindle (17) and a workpiece spindle motor (20) and includes a tool spindle unit (25) including a tool spindle (27) and a tool spindle motor. The machine tool further includes a first-axis movement mechanism (6) and a second-axis movement mechanism (9) relatively moving, in a plane including an axis of the workpiece spindle (17) and an axis of the tool spindle (27), the workpiece spindle unit (15) and the tool spindle unit (25) in a first axis direction and a second axis direction intersecting the first axis direction, respectively, and further includes a controller. The tool spindle unit (25) is arranged such that the axis of the tool spindle (27) intersects the axis of the workpiece spindle (17). The controller relatively moves the workpiece spindle unit (15) and the tool spindle unit (25) along the axis of the tool spindle (27) through combined operation of the first-axis movement mechanism (6) and second-axis movement mechanism (9), thereby grinding a workpiece (W) with a cup grindstone (T).
MACHINE TOOL
A machine tool includes a workpiece spindle unit (15) including a workpiece spindle (17) and a workpiece spindle motor (20) and includes a tool spindle unit (25) including a tool spindle (27) and a tool spindle motor. The machine tool further includes a first-axis movement mechanism (6) and a second-axis movement mechanism (9) relatively moving, in a plane including an axis of the workpiece spindle (17) and an axis of the tool spindle (27), the workpiece spindle unit (15) and the tool spindle unit (25) in a first axis direction and a second axis direction intersecting the first axis direction, respectively, and further includes a controller. The tool spindle unit (25) is arranged such that the axis of the tool spindle (27) intersects the axis of the workpiece spindle (17). The controller relatively moves the workpiece spindle unit (15) and the tool spindle unit (25) along the axis of the tool spindle (27) through combined operation of the first-axis movement mechanism (6) and second-axis movement mechanism (9), thereby grinding a workpiece (W) with a cup grindstone (T).
PEDESTAL POLISHING APPARATUS
A cleaning apparatus for a vacuum pedestal and method of cleaning a pedestal used in semiconductor device fabrication are described. The apparatus has a baseplate, a collar attached to the baseplate, a cap disposed on the collar, and a shaft that extends from the collar through the cap, collar and baseplate. A manual rotatable handle is attached to a shaft portion that extends from the cap. Motion of the handle in a downward direction is impeded by the cap. A disk is attached to a lower portion of the shaft and is separated from a bottom of the baseplate due to weighted rings, which are attached to the disk and surround the lower portion of the shaft such that a vertical float is present between the shaft and the cap. At least one abrasive pad is attached to the disk to remove build-up on the underlying pedestal surface.