B24B7/20

Method of making carrier head membrane with regions of different roughness

An apparatus comprises a flexible membrane for use with a carrier head of a substrate chemical mechanical polishing apparatus. The membrane comprises an outer surface providing a substrate receiving surface, wherein the outer surface has a central portion and an edge portion surrounding the central portion, wherein the central portion has a first surface roughness and the edge portion has a second surface roughness, the first surface roughness being greater than the second surface roughness.

RFID part authentication and tracking of processing components

Embodiments provided herein provide for methods and apparatus for detecting, authenticating, and tracking processing components, including consumable components or non-consumable components used on substrate processing systems for electronic device manufacturing, such as semiconductor chip manufacturing. The semiconductor processing systems and/or its processing components herein include a remote communication device, such as a wireless communication apparatus, for example, radio frequency identification (RFID) devices or other devices embedded in, disposed in, disposed on, located on, or otherwise coupled to one or more processing components or processing component assemblies and/or integrated within the semiconductor processing system itself. The processing component may include a single component (part) or an assembly of components (parts) that are used within the semiconductor processing tool.

RFID part authentication and tracking of processing components

Embodiments provided herein provide for methods and apparatus for detecting, authenticating, and tracking processing components including consumable components or non-consumable components used on substrate processing systems for electronic device manufacturing, such as semiconductor chip manufacturing. The semiconductor processing systems and/or its processing components herein include a remote communication device, such as a wireless communication apparatus, for example radio frequency identification (RFID) devices or other devices embedded in, disposed in, disposed on, located on, or otherwise coupled to one or more processing components or processing component assemblies and/or integrated within the semiconductor processing system itself. The processing component may include a single component (part) or an assembly of components (parts) that are used within the semiconductor processing tool.

GRINDING APPARATUS AND USE METHOD OF GRINDING APPARATUS
20200391337 · 2020-12-17 ·

A grinding apparatus includes a first chuck table that has a porous holding surface corresponding to a first wafer and holds the first wafer, a second chuck table that has a porous holding surface corresponding to a second wafer different from the first wafer in size or shape and holds the second wafer, and a grinding unit that grinds, by a grinding wheel, the first wafer sucked and held by the first chuck table positioned at the grinding position or the second wafer sucked and held by the second chuck table positioned at the grinding position.

Composite ceramic abrasive polishing solution

A polishing solution includes a fluid component and a plurality of ceramic abrasive composites. The ceramic abrasive composites include individual abrasive particles uniformly dispersed throughout a porous ceramic matrix. At least a portion of the porous ceramic matrix includes glassy ceramic material. The ceramic abrasive composites are dispersed in the fluid component.

Composite ceramic abrasive polishing solution

A polishing solution includes a fluid component and a plurality of ceramic abrasive composites. The ceramic abrasive composites include individual abrasive particles uniformly dispersed throughout a porous ceramic matrix. At least a portion of the porous ceramic matrix includes glassy ceramic material. The ceramic abrasive composites are dispersed in the fluid component.

WORKING METHOD FOR WORKPIECE AND POLISHING MACHINE BRUSH AND TOOL HOLDER USED THEREFOR

An object is to provide a working method capable of efficiently deburring and polishing a workpiece and making the life of a brush in use long in a machine tool not having power to directly rotate a tool and capable of working the workpiece by bringing the tool and the workpiece in contact with each other while causing the tool and the workpiece to perform a relative motion.

The present invention relates to a working method of working a workpiece by rotating a brush-like grinding wheel by causing a brush-like grinding wheel and a workpiece to perform a relative motion while bringing the brush-like grinding wheel and the workpiece in contact with each other in a machine tool not having power to rotate a tool.

Carrier head membrane roughness to control polishing rate

An apparatus comprises a flexible membrane for use with a carrier head of a substrate chemical mechanical polishing apparatus. The membrane comprises an outer surface providing a substrate receiving surface, wherein the outer surface has a central portion and an edge portion surrounding the central portion, wherein the central portion has a first surface roughness and the edge portion has a second surface roughness, the first surface roughness being greater than the second surface roughness.

Multi-layered polishing pads

A multi-layered polishing pad arrangement includes a first polishing pad layer having a first top and a first bottom major surface, a second polishing pad layer having a second top and a second bottom major surface, and a coupling arrangement disposed between the first bottom surface and the second top surface. The thickness of each of the first and second polishing pad layer ranges between 0.125 mm and 10 mm.

Multi-layered polishing pads

A multi-layered polishing pad arrangement includes a first polishing pad layer having a first top and a first bottom major surface, a second polishing pad layer having a second top and a second bottom major surface, and a coupling arrangement disposed between the first bottom surface and the second top surface. The thickness of each of the first and second polishing pad layer ranges between 0.125 mm and 10 mm.