The invention relates to a method for cutting off at least one portion (4), in particular a wafer, from a solid body (2). The method comprises at least the following steps: modifying the crystal lattice of the solid body (2) by means of a modifier (18), wherein a number of modifications (19) are produced to form a nonplanar, in particular convex, detachment region (8) in the interior of the solid body, wherein the modifications (19) are produced in accordance with predetermined parameters, wherein the predetermined parameters describe a relationship between a deformation of the portion (4) and a defined further treatment of the portion (4), detaching the portion (4) from the solid body (2).

A method for treating a solid layer includes: providing a multi-layer assembly having a carrier substrate and a solid layer bonded to the carrier substrate by a bonding layer, the solid layer having an exposed surface including a defined surface structure, the defined surface structure resulting from a removal, which is effected by a crack, from a donor substrate, at least in sections; processing the solid layer, which is arranged on the carrier substrate; and separating the solid layer from the carrier substrate by a destruction of the bonding layer.

A manufacturing method for a glass film includes at least a cutting step of cutting a strip-shaped glass film while conveying the glass film in a predetermined direction by a conveying device. In the cutting step, the glass film is cut in predetermined cutting zones by irradiating the glass film with laser beams. A support conveyance surface of the conveying device for the glass film is separated at the cutting zones for the glass film. Further, a first surface plate capable of supporting the glass film in a contact manner is disposed at a position that is located in a width direction of the glass film with respect to the cutting zones and corresponds to a center of a glass film obtained by the cutting in the width direction.

Aspects of the invention may be directed to a method of creating a predetermined structure from a diamond bulk. In some embodiments, the method may include: irradiating the diamond bulk with at least one laser having a focal point at a predetermined location, the laser may create graphitization at locations where the focal point of the laser engages the diamond bulk; at least one of: moving the diamond bulk to be positioned with the focal point of the laser within the diamond bulk, and moving the at least one laser such that diamond bulk be positioned with the focal point of the laser, along at least one axis wherein the movement corresponds to a predefined scheme; removing of the graphite from the diamond bulk; and extracting the predetermined structure from the diamond bulk.

A silicon wafer forming method includes: a block ingot forming step of cutting a silicon ingot to form block ingots; a planarizing step of grinding an end face of the block ingot to planarize the end face; a separation layer forming step of applying a laser beam of such a wavelength as to be transmitted through silicon to the block ingot, with a focal point of the laser beam positioned in the inside of the block ingot at a depth from the end face of the block ingot corresponding to the thickness of the wafer to be formed, to form a separation layer; and a wafer forming step of separating the silicon wafer to be formed from the separation layer.

Provided are a method of full body cutting a brittle material without via the bend-breaking step, an apparatus of cutting a brittle material, a method of manufacturing a brittle material, and a cut brittle material. A method of cutting a brittle material, the method comprising: a conveyance cutting step of converging and irradiating an infrared ray to the brittle material linearly along a line using an infrared line heater while moving the infrared line heater relative to the brittle material in a direction along the line, thereby cutting the brittle material along the line.

Provided is a cleaving method for a glass film (G) including: cleaving, during conveyance of the glass film (G) in a predetermined direction, the glass film (G) continuously along a preset cleaving line (8) extending in a predetermined conveying direction (a) by a thermal stress generated through localized heating performed along the preset cleaving line (8) and through cooling of a locally heated region (H); dividing the glass film (G) in a width direction of the glass film (G); diverting, after the dividing, adjacent divided glass films (10), which are obtained by the dividing, so that the adjacent divided glass films (10) are separated in a front and rear direction of the adjacent divided glass films; and forming a predetermined widthwise clearance between the adjacent divided glass films after the dividing of the glass film (G) and before the diverting of the adjacent divided glass films (10).

Provided are ceramic cutting methods and equipment: a beam irradiation unit for irradiating a beam of a wavelength absorbed by a pattern formed on an upper surface of a ceramic and partially absorbed by the ceramic; a coolant spraying unit for spraying a coolant onto the ceramic irradiated with the beam, wherein the pattern is removed by heating and cooling the ceramic , and is cut by reducing thermal damage by using the stress caused by the recrystallization of an upper layer or all of the ceramic or the stress generated by the thermal expansion and contraction of the upper layer or the entire ceramic, thereby recrystallizing the ceramic by heating and cooling the ceramic , or cutting the ceramic by heating until the ceramic melts, and cooling to apply thermal stress to the inside of the ceramic, followed by an additional separation process of a ceramic material without loss.

A method of fabricating plates of super-hard material and cutting techniques suitable for such a method. A method of fabricating a plate (14) of super-hard material, the method comprising: • providing a substrate (4) have a lateral dimension of at least 40 mm; • growing a layer of super-hard material on the substrate (4) using a chemical vapour deposition process; and • slicing one or more plates (14) of super-hard material from the substrate using a collimated cutting beam (8), the or each plate of super-hard material (14) having a lateral dimension of at least 40 mm, wherein the collimated cutting beam (8) is collimated with a half angle divergence of no more than 5 degrees.

The present invention relates to a method for the production of at least one three-dimensional layer of solid material, in particular for usage as wafer, and/or at least one tree-dimensional solid body. The inventive method preferably comprises the following steps: Providing a work piece for removing of layers of solid material and/or the solid bodies, wherein the work piece comprises at least one exposed surface, generating defects inside the work piece, wherein the defects define at least one crack directing layer, wherein the crack directing layer describes at least one three-dimensional contour; attaching or generating a receiving layer at the exposed surface of work piece by forming a composite structure, thermal treating of the receiving layer for generating stresses inside the work piece, wherein the stresses are causing a crack propagation inside the work piece, wherein a layer of solid material or a three-dimensional solid body is separated along the crack directing layer due to the crack propagation, wherein a surface of the layer of solid material or a surface of the solid body corresponds to the three-dimensional contour of the crack directing layer.