B28D5/0023

Device and method for cleaving a substrate
10773420 · 2020-09-15 · ·

A device and method for cleaving a sample includes: creating an indentation on a top surface of the sample by applying a downward force along a vertical axis, the axis perpendicular to the top surface of the sample; providing a breaking pin located under the sample to touch the bottom surface of the sample at a position that is directly opposite from the indentation; and, a cleaving bar for applying a downward force on the sample by providing a left side and right side breaker pin wherein the downward force comprises a left-side downward force extended through the left-side breaker pin and right-side downward force through the right side breaker pin. Further, the pins that provide the left-side and right-side downward force are disposed on a breaker bar and arranged to be on opposite sides of a vertical axis that extends through the indentation on the top surface.

Device and Method for Applying Pressure to Stress-Producing Layers for Improved Guidance of a Separation Crack
20200215648 · 2020-07-09 ·

The present invention relates to a method, according to claim 1, for separating at least one solid body layer (1), particularly a solid body disk, from a donor substrate (2). The method according to the invention comprises preferably at least the following steps: providing a donor substrate (2); producing or arranging a stress-producing layer (4) on a particularly flat surface (5) of the donor substrate (2) which axially defines the donor substrate (2); pressing at least one pressure application element (6) of a pressure application device (8) onto at least one pre-determined portion of the stress-producing layer (4), in order to press the stress-producing layer (4) onto the surface (5); separating the solid body layer (1) from the donor substrate (2) by thermally applying the stress-producing layer (4), thereby producing mechanical stress in the donor substrate (2), the mechanical stress creating a crack for separating a solid body layer (1), and the pressure application element (6) being pressed onto the stress-producing layer (4) during the thermal application of the stress-producing layer (4).

METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE
20200169058 · 2020-05-28 ·

A method of fabricating a semiconductor light-emitting device includes: (a) forming a semiconductor layer including a light-emitting layer on the first surface of a substrate; (b) forming a first trench and a second trench in the semiconductor layer, the first trench extending in a first direction that is parallel to a principal plane of the substrate, and the second trench being disposed inside and parallel to the first trench; (c) forming a third trench parallel to the first trench in the second surface of the substrate opposite to the first surface of the substrate; and (d) forming a semiconductor light-emitting device by dividing the substrate. In (d), an end of at least one divided side of the semiconductor light-emitting device is in the second trench. The first trench has a first width, and the second trench has a second width. The second width is less than the first width.

NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.

SYSTEM AND METHOD OF CLEAVING OF BURIED DEFECTS
20190242829 · 2019-08-08 ·

A method for exposing a buried defect, the method may include illuminating, by a radiation source, an object that comprises the buried defect, with illuminating radiation that passes through radiation transparent part of a chuck, while the object is supported by the chuck; detecting, by a sensor, a detected radiation that passed through the object, to provide a visual indication about the buried defect, wherein the visual indication is indicative of a location of the buried defect; setting, based on the location of the buried object and a spatial relationship between a cleaving element and the sensor, a cleaving axis of a cleaving element to virtually cross the buried defect; and cleaving, by the cleaving element, the object to expose the buried object.

Wafer group, wafer manufacturing device, and wafer manufacturing method

A wafer group facilitates securing uniformity of products manufactured from the wafer group whose composition varies among wafers. A technique excludes uncertain factors in forming OF, forming OF with extremely high probability and extremely high accuracy, the wafer group being constituted by a plurality of wafers obtained from the same ingot, with all wafers having an orientation flat (OF), wherein the wafer group is constituted by 70 or more wafers, and in the OF orientation accuracy of the wafer group represented by an angle, the OF orientation accuracy in each wafer is within 0.010.

WAFER PROCESSING METHOD
20190160597 · 2019-05-30 ·

A wafer processing method is disclosed to divide a wafer of glass substrate into individual chips along division lines. In the shield tunnel forming step, a pulsed laser beam of a wavelength, which transmits through the wafer, is irradiated with its focal point positioned at a region corresponding to each division line so that a plurality of shield tunnels which are each formed of perforations and affected regions surrounding the perforations are formed along the division lines, respectively. In the modified layer forming step, another pulsed laser beam of a wavelength, which transmits through the wafer, is irradiated with its focal point positioned at the region corresponding to each division line so that modified layers are formed in addition to the shield tunnels along the division lines, respectively. In the dividing step, an external force is applied to the wafer to divide the wafer into individual chips.

APPARATUS FOR DIVIDING WORKPIECE
20190109023 · 2019-04-11 ·

A dividing apparatus divides a workpiece along projected dicing lines into chips, the workpiece being stuck to an upper surface of a protective tape mounted on an annular frame. The dividing apparatus includes a frame holding unit for holding the annular frame and a dividing unit for pressing the workpiece in the vicinity of one at a time of the projected dicing lines and dividing the workpiece into chips along the projected dicing line. The dividing unit includes a holder for holding a portion of the workpiece in the vicinity of the projected dicing line where the workpiece is to be broken, from both upper and lower surfaces of the workpiece, and a presser for pressing chips next to chips held by the holder across the projected dicing line where the workpiece is to be broken, thereby to divide the workpiece along the projected dicing line.

DEVICE AND METHOD FOR CLEAVING A SUBSTRATE
20190054658 · 2019-02-21 ·

A device and method for cleaving a sample includes: creating an indentation on a top surface of the sample by applying a downward force along a vertical axis, the axis perpendicular to the top surface of the sample; providing a breaking pin located under the sample to touch the bottom surface of the sample at a position that is directly opposite from the indentation; and, a cleaving bar for applying a downward force on the sample by providing a left side and right side breaker pin wherein the downward force comprises a left-side downward force extended through the left-side breaker pin and right-side downward force through the right side breaker pin. Further, the pins that provide the left-side and right-side downward force are disposed on a breaker bar and arranged to be on opposite sides of a vertical axis that extends through the indentation on the top surface.

Device and Method for Cleaving a Liquid Sample
20180306685 · 2018-10-25 · ·

An apparatus and method for cleaving a liquid sample are disclosed. The apparatus includes a load lock chamber containing a cleaving module, a cryo-cooler, a vacuum chamber configured to receive the cleaving module from the load lock chamber, and a gate valve between the load lock chamber and the vacuum chamber. The cleaving module is configured to cleave a crystalline sample holder and the liquid sample. The liquid sample includes one or more liquid phase materials and is cleavable by the cleaving module when in the solid phase. The cryo-cooler is configured to cool and/or maintain a temperature of the sample holder and the sample below the melting point of each of the liquid phase materials. The gate valve has at least one opening therein configured to (i) allow the cleaving module to enter and exit the vacuum chamber and/or (ii) permit gaseous communication between the load lock chamber and the vacuum chamber.