Wafers are sliced from a workpiece using a wire saw during slicing operations. The wire saw has a wire web of sawing wire and a setting device. The wire web is stretched in a plane between wire guide rollers that are mounted between fixed and moveable bearings. During each of the slicing operations, the setting device feeds the workpiece through the wire web along a feed direction perpendicular to a workpiece axis and perpendicular to the plane of the wire web. During each of the slicing operations, the movable bearings move oscillatingly axialy. The feeding of the workpiece through the wire web includes a simultaneous displacement of the workpiece along the workpiece axis using the setting element in accordance with a correction profile, which includes an oscillating component that is opposite to the effect which the axial moving of the movable bearings has on the shape of the sliced-off wafers.

In accordance with a method of manufacturing CZ silicon wafers, a parameter of at least two of the CZ silicon wafers is measured. A group of the CZ silicon wafers falling within a tolerance of a target specification is determined. The group of the CZ silicon wafers is divided into sub-groups taking into account the measured parameter. An average value of the parameter of the CZ silicon wafers of each sub-group differs among the sub-groups, and a tolerance of the parameter of the CZ silicon wafers of each sub-group is smaller than a tolerance of the parameter of the target specification. A labeling configured to distinguish between the CZ silicon wafers of different sub-groups is prepared. The CZ silicon wafers falling within the tolerance of the target specification are packaged.

In accordance with a method of manufacturing CZ silicon wafers, a parameter of at least two of the CZ silicon wafers is measured. A group of the CZ silicon wafers falling within a tolerance of a target specification is determined. The group of the CZ silicon wafers is divided into sub-groups taking into account the measured parameter. An average value of the parameter of the CZ silicon wafers of each sub-group differs among the sub-groups, and a tolerance of the parameter of the CZ silicon wafers of each sub-group is smaller than a tolerance of the parameter of the target specification. A labeling configured to distinguish between the CZ silicon wafers of different sub-groups is prepared. The CZ silicon wafers falling within the tolerance of the target specification are packaged.

The invention relates to a method for separating a plurality of slices from workpieces (4) by means of a wire saw, wherein a wire grating (2) is tensioned in a plane between two wire-guiding rollers (1), wherein each of the two wire-guiding rollers (1) is mounted between a fixed bearing (5) and a floating bearing (6). The method involves delivering the workpiece (4) via the wire grating (2) by controlling the temperature of the workpiece (4) by wetting the workpiece (4) with a cooling medium, while simultaneously axially shifting the floating bearing (6) by controlling the temperature of the fixed bearing (5) with a cooling fluid according to the specification of a first temperature profile, and while simultaneously shifting the workpiece (4) along the workpiece axis by means of a control element (15) according to the specification of a second correction profile.

Slices are cut from workpieces using a wire saw having a wire array tensioned in a plane between two wire guide rollers each supported between fixed and floating bearings and comprising a chamber and a shell enclosing a core and having guide grooves for wires. During a cut-off operation, a workpiece is fed through the wire array perpendicular to a workpiece axis and the wire array plane. The workpiece is fed through the wire array while simultaneously: changing shell lengths by adjusting chamber temperatures in dependence on a depth of cut and a first correction profile; and moving the workpiece along the workpiece axis in accordance with a second correction profile. The correction profiles are opposed to a shape deviation.

A method uses a wire saw to cut slices from a workpiece. The wire saw has an array of saw wire tensioned in a plane between two rollers supported between fixed and floating bearings. During a cut-off operation, the workpiece is fed through the wire array with simultaneous axial movement of the floating bearings by adjusting the temperature of the fixed bearings with a cooling fluid in accordance with the temperature of the cooling fluid being in dependence on a depth of cut and correlating with a first correction profile, which specifies the travel of the floating bearings in dependence on the depth of cut. Also, the workpiece is fed through the wire array while simultaneously moving the workpiece along the workpiece axis in accordance with a second correction profile, specifying the travel of the workpiece. The first and second correction profiles are opposed to a shape deviation.

The present disclosure relates to the field of Chemical Vapor Deposition (CVD) diamonds and their processing after fabrication. In particular, the present disclosures provides a method for coring and slicing a CVD diamond product, wherein the CVD diamond product comprises a CVD diamond and graphitized material covering several side-faces of the diamond. The method is carried out by an apparatus that provides a laser beam coupled into a fluid jet. The method comprises, for the coring, cutting the product with the laser beam to remove the graphitized material from the side-faces of the diamond. Further, the method comprises, for the slicing, cutting off one or more slices from the diamond with the laser beam.

The present disclosure relates to the field of Chemical Vapor Deposition (CVD) diamonds and their processing after fabrication. In particular, the present disclosures provides a method for coring and slicing a CVD diamond product, wherein the CVD diamond product comprises a CVD diamond and graphitized material covering several side-faces of the diamond. The method is carried out by an apparatus that provides a laser beam coupled into a fluid jet. The method comprises, for the coring, cutting the product with the laser beam to remove the graphitized material from the side-faces of the diamond. Further, the method comprises, for the slicing, cutting off one or more slices from the diamond with the laser beam.

Provided is a wire sawing device comprising an ingot temperature controller, the wire sawing device comprising: a chamber; an ingot clamp supporting an ingot inside the chamber; a first roller and a second roller; a wire which is wound around the first roller and the second roller and cuts the ingot into a plurality of wafers by rotating; a temperature measuring unit which is mounted inside the chamber, in which the ingot is cut, and measures the temperature of the ingot; and a heater unit mounted inside the chamber.

A silicon wafer forming method includes: a block ingot forming step of cutting a silicon ingot to form block ingots; a planarizing step of grinding an end face of the block ingot to planarize the end face; a separation layer forming step of applying a laser beam of such a wavelength as to be transmitted through silicon to the block ingot, with a focal point of the laser beam positioned in the inside of the block ingot at a depth from the end face of the block ingot corresponding to the thickness of the wafer to be formed, to form a separation layer; and a wafer forming step of separating the silicon wafer to be formed from the separation layer.