An electrical circuit comprising at least two negative capacitance insulators connected in series, one of the two negative capacitance insulators is biased to generate a negative capacitance. One of the negative capacitance insulators may include an air-gap which is part of a nanoelectromechnical system (NEMS) device and the second negative capacitance insulator includes a ferroelectric material. Both of the negative capacitance insulators may be located between the channel and gate of a field effect transistor. The NEMS device may include a movable electrode, a dielectric and a fixed electrode and arranged so that the movable electrode is attached to at least two points and spaced apart from the dielectric and fixed electrode, and the ferroelectric capacitor is electrically connected to either of the electrodes.

An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.

A device includes a frame including a first end and a second end; a mechanism including a first side that faces the first end of the frame, and a second side that faces the second end of the frame; a first buckling member attached to the first side of the mechanism and the first end of the frame; a second buckling member attached to the second side of the mechanism and the second end of the frame; and at least one actuator that engages the mechanism, the first buckling member, and the second buckling member in a selective sequence causing the mechanism to articulate between the first end and the second end of the frame. Engagement of the first buckling member and the second buckling member by the at least one actuator causes the first buckling member and the second buckling member to buckle and unbuckle in the selective sequence.

A method of forming a microelectromechanical device is disclosed wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductor. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.

A micro structure with a substrate having a top surface; a first electrode with a horizontal orientation parallel to the top surface of the substrate, wherein the first electrode is embedded within the substrate so that a top surface of the first electrode coincides with the top surface of the substrate; a dielectric layer arranged on the top surface of the first electrode; and a second electrode arranged above the dielectric layer.

A micromechanical switch including a first substrate with a micromechanical functional layer in which a deflectable switching element is formed, and with a second substrate that is connected to the first substrate. The second substrate is situated at a distance above the switching element. The switching element includes an electrically conductive first contact area and is deflectable toward the second substrate. The second substrate, at an internal side, includes an electrically conductive second contact area that is situated in such a way that the switching element together with the first contact area may be applied to the second contact area in order to close an electrical contact. A method for manufacturing a micromechanical switch is also described.

A method for fabricating an MEMS switch including providing a substrate and printing at least one metal bias electrode, at least one metal connection pad and at least one metal contact pad on the substrate. The method then prints a sacrificial layer on the substrate and over the at least one bias electrode, and prints a flexible beam structure on the sacrificial layer. The sacrificial layer is then removed by dissolving the sacrificial layer in a wet solution to release the beam structure so that the beam structure is spaced some distance from the at least one bias electrode and the contact pad.

The present invention discloses a system for protecting a MEMS product from an ESD event, including, a control circuit; a MEMS product, electrically connected with the control circuit; an ESD protection device, electrically connected with the control circuit, and electrically connected with the MEMS product in parallel; wherein, the ESD protection device comprises: a top electrode assembly electrically connected with the control circuit; a flexible beam comprising a first electrode layer electrically connected with the control circuit, a second electrode layer electrically connected with the MEMS product, and a moving metal contact electrically connected with the second electrode layer; a bottom electrode assembly having a bottom electrode layer electrically connected with the MEMS product and a fixed metal contact electrically connected with the bottom electrode layer and facing the moving metal contact.

An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.

A method of manufacturing a MEMS device, wherein the MEMS device has a cavity in which a beam will move to change the capacitance of the device. After most of the device build-up has occurred, sacrificial material is removed to free the beam within the MEMS device cavity. Thereafter, exposed ruthenium contacts are etched back with an etchant comprising chlorine to remove the top surface of both the top and bottom contacts. Due to this etch back process, low contact resistance can be achieved with less susceptibility to stiction events. Stiction performance can be further improved by conditioning the ruthenium contacts in a fluorine based plasma. The fluorine based plasma process, or fluorine treatment, can be performed prior to or after etch-back process of the ruthenium contacts.