Provided are an MEMS device, a head, and a liquid jet device in which substrates are inhibited from warping, so that a primary electrode and a secondary electrode can be reliably connected to each other. Included are a primary substrate 30 provided with a bump 32 including a primary electrode 34, and a secondary substrate 10 provided with a secondary electrode 91 on a bottom surface of a recessed portion 36 formed by an adhesive layer 35. The primary substrate 10 and the secondary substrate 30 are joined together with the adhesive layer 35, the primary electrode 34 is electrically connected to the secondary electrode 91 with the bump 32 inserted into the recessed portion 36, and part of the bump 32 and the adhesive layer 35 forming the recessed portion 36 overlap each other in a direction in which the bump 32 is inserted into the recessed portion 36.

A MEMS device includes a first substrate 22 including a single-crystal silicon substrate and a second substrate 23 including a single-crystal silicon substrate, in which the first substrate 22 and the second substrate 23 are laminated together, and the first substrate 22 and the second substrate 23 are joined to each other such that the cleavage directions of both substrates intersect each other.

A device includes a first member, a second member, and a bonding layer. A first surface of the first member and a second surface of the second member are bonded to each other via the bonding layer. The bonding layer includes a filler particle configured to be in contact with both of the first surface and the second surface, and a solidified adhesive. A distance between the first surface and the second surface is smaller than a diameter of the filler particle at at least one portion of an outer edge of the bonding layer.

A 3D printer includes an ejector device comprising a substrate and a plurality of ejector conduits on the substrate, the ejector conduits being arranged in an array. Each ejector conduit includes: a first end positioned to accept a print material, a second end comprising an ejector nozzle, the ejector nozzle comprising a first electrode and a second electrode, and a passageway for allowing the print material to flow from the first end to the second end, at least one surface of the first electrode being exposed in the passageway and at least one surface of the second electrode being exposed in the passageway. A current pulse generating system is in electrical connection with the first electrode and the second electrode of the plurality of ejector conduits. A magnetic field source is sufficiently proximate the second end of the plurality of ejector conduits so as to generate a flux region disposed within the ejector nozzle of the plurality of ejector conduits during operation of the 3D printer. The 3D printer further comprises a positioning system for controlling the relative position of the ejector device with respect to a print substrate in a manner that would allow the print substrate to receive print material jettable from the ejector nozzle of the plurality of ejector conduits during operation of the 3D printer.

A method for creating at least one recess, in particular an aperture, in a transparent or transmissive material, includes: selectively modifying the material along a beam axis by electromagnetic radiation; and creating the at least one recess by one or more etching steps, using different etching rates in a modified region and in non-modified regions. The electromagnetic radiation produces modifications having different characteristics in the material along the beam axis such that the etching process in the material is heterogeneous and the etching rates differ from one another in regions modified with different characteristics under unchanged etching conditions.

Aspects are directed to techniques for fabricating a microfluidic device on a substrate. In a particular example, a method of manufacturing a microfluidic device includes growing a thermal oxide layer on a substrate and depositing a dielectric layer, including doped a dielectric film, over the thermal oxide layer. Next, an aperture defined by a dielectric wall which forms part of the dielectric layer is formed in the dielectric layer by selectively removing the dielectric film. Finally, the aperture is sealed with a sealing film to prevent the dielectric film from being exposed to a fluid contained in the aperture. The sealing film may be of an electrically insulating material resistive to corrosive attributes of the fluid contained in the aperture.

A method for processing a silicon substrate includes forming a structure having a bottom surface and a depth of 200 μm or more or 300 μm or more from a first surface of a silicon substrate, forming a protective film on an inner wall of the structure, and performing plasma etching so as to selectively remove the protective film disposed on the bottom surface of the structure with respect to the protective film disposed on the substantially perpendicular side wall of the structure, wherein the plasma etching is performed under the condition in which plasma with a sheath length at least 10 times the depth when the depth is 200 μm or more, or at least 5 time the depth when the depth is 300 μm or more, is generated and a mean free path of ions generated in the plasma is longer than the sheath length.

An embodiment method includes forming a first plurality of bond pads on a device substrate, depositing a spacer layer over and extending along sidewalls of the first plurality of bond pads, and etching the spacer layer to remove lateral portions of the spacer layer and form spacers on sidewalls of the first plurality of bond pads. The method further includes bonding a cap substrate including a second plurality of bond pads to the device substrate by bonding the first plurality of bond pads to the second plurality of bond pads.

Examples of an epitaxial-silicon wafer with a buried oxide layer are described herein. Examples of methods to manufacture an epitaxial-silicon wafer with a buried oxide layer are also described herein. In some examples, material may be removed from an epitaxial-silicon wafer at a surface opposite an epitaxial surface layer until the epitaxial-silicon wafer is a specified thickness. The thinned epitaxial-silicon wafer may be bonded to an oxidized-silicon wafer at an oxidized surface forming a buried oxide layer.

A microfluidic die may include a microfluidic passage and a protective layer provided adjacent to internal surfaces of the microfluidic passage. The protective layer may include a protective nano-crystalline material and a protective amorphous matrix encapsulating the protective nano-crystalline material.