A microelectronic device comprises a base structure, a memory array overlying the base structure, and a conductive pad tier overlying the memory array. The base structure comprises a logic region including logic devices. The memory array comprises vertically extending strings of memory cells within a horizontal area of the logic region of the base structure. The conductive pad tier comprises first conductive pads substantially outside of the horizontal area of the logic region of the base structure, and second conductive pads horizontally neighboring the first conductive pads and within the horizontal area of the logic region of the base structure. Memory devices and electronic systems are also described.

An electrical circuit comprising at least two negative capacitance insulators connected in series, one of the two negative capacitance insulators is biased to generate a negative capacitance. One of the negative capacitance insulators may include an air-gap which is part of a nanoelectromechnical system (NEMS) device and the second negative capacitance insulator includes a ferroelectric material. Both of the negative capacitance insulators may be located between the channel and gate of a field effect transistor. The NEMS device may include a movable electrode, a dielectric and a fixed electrode and arranged so that the movable electrode is attached to at least two points and spaced apart from the dielectric and fixed electrode, and the ferroelectric capacitor is electrically connected to either of the electrodes.

A microelectronic device comprises local digit line structures, global digit line structures, source line structures, sense transistors, read transistors, and write transistors. The local digit line structures are coupled to strings of memory cells. The global digit line structures overlie the local digit line structures. The source line structures are interposed between the local digit line structures and the global digit line structures. The sense transistors are interposed between the source line structures and the global digit line structures, and are coupled to the local digit line structures and the source line structures. The read transistors are interposed between and are coupled to the sense transistors and the global digit line structures. The write transistors are interposed between and are coupled to the global digit line structures and the local digit line structures. Additional microelectronic devices, memory devices, and electronic systems are also described.

A microelectronic socket structure and a method of forming the same. The socket structure comprises: a socket structure housing defining a cavity therein; and an interconnection structure including: a contact element disposed at least in part within the cavity, and configured to be electrically coupled to a corresponding microelectronic package, the contact element corresponding to one of a signal contact element or a ground contact element; and a conductive structure disposed at least in part within the cavity, electrically coupled to the contact element, and having an outer contour that is non-conformal with respect to an outer contour of the contact element.

A microelectronic device comprises a stack structure, first digit lines, second digit lines, and multiplexer devices. The stack structure comprises an access line region comprising a lower group of conductive structures, and a select gate region overlying the access line region and comprising an upper group of conductive structures. The first digit are coupled to strings of memory cells, and the second digit lines are coupled to additional strings of memory cells. The second digit lines are horizontally offset from the first digit lines in a first direction and are substantially horizontally aligned with the first digit lines in a second direction. The multiplexer devices are coupled to page buffer devices, the first digit lines, and the second digit lines. The multiplexer devices comprise transistors in electrical communication with the upper group of conductive structures. Additional microelectronic devices, memory devices, and electronic systems are also described.

A microelectronic device comprises local digit line structures, global digit line structures, source line structures, sense transistors, read transistors, and write transistors. The local digit line structures are coupled to strings of memory cells. The global digit line structures overlie the local digit line structures. The source line structures are interposed between the local digit line structures and the global digit line structures. The sense transistors are interposed between the source line structures and the global digit line structures, and are coupled to the local digit line structures and the source line structures. The read transistors are interposed between and are coupled to the sense transistors and the global digit line structures. The write transistors are interposed between and are coupled to the global digit line structures and the local digit line structures. Additional microelectronic devices, memory devices, and electronic systems are also described.

A method for depositing an object, including:—approaching, in an enclosure, a holder in the direction of a carrier substrate, then—transferring, in the enclosure, the object from the holder to an area for depositing the carrier substrate. The transfer step is preferably carried out when the inside of the enclosure is in a vacuum at a pressure below 10 bar.

In a described example, a device includes: a semiconductor substrate; a memory array on the semiconductor substrate, the memory array comprising rows and columns of memory cells in a Manhattan pattern, the memory cells having a pitch in a direction along the columns; and an array of micromirrors in a diamond pattern over the memory cells, the micromirrors coupled to corresponding memory cells, the micromirrors having a diagonal pitch length in the direction along the columns that is between 1.8 times the pitch and 2.2 times the pitch.

A micro-electro-mechanical-system (MEMS) device comprises an inertial component configured for being connected to a structure by a flexible connection allowing the inertial component to deform or move relative to the structure in response to an external stimulus applied to the structure. One or more resonant components are connected to the structure or inertial component, the resonant component(s) having resonant mode(s). Transduction unit(s) measures an oscillatory motion of the resonant component relative to the inertial component and/or structure. An electronic control unit applies a pump of electrostatic force to induce an oscillatory motion of the resonant component(s) in the resonant mode, the oscillatory motion being a non-linear function of a strength of the electrostatic force. The resonant component is configured to be coupled to the inertial component and/or the structure such that a deformation and/or motion of the inertial component in response to an external stimulus changes the strength of the pump, the electronic control unit configured for producing and outputting an output signal being a mathematical function of the measured oscillatory motion. A system for producing a neuromorphic output for a MEMS device exposed to external stimuli is also provided.

A microelectronic device comprises local digit line structures, global digit line structures, source line structures, sense transistors, read transistors, and write transistors. The local digit line structures are coupled to strings of memory cells. The global digit line structures overlie the local digit line structures. The source line structures are interposed between the local digit line structures and the global digit line structures. The sense transistors are interposed between the source line structures and the global digit line structures, and are coupled to the local digit line structures and the source line structures. The read transistors are interposed between and are coupled to the sense transistors and the global digit line structures. The write transistors are interposed between and are coupled to the global digit line structures and the local digit line structures. Additional microelectronic devices, memory devices, and electronic systems are also described.